scholarly journals Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

2021 ◽  
Vol 7 (2) ◽  
pp. 73-78
Author(s):  
Roman Yu. Kozlov ◽  
Svetlana S. Kormilitsina ◽  
Elena V. Molodtsova ◽  
Eugene O. Zhuravlev
Keyword(s):  
Single Crystals ◽  
Indium Antimonide ◽  
Optical Microscope ◽  
Czochralski Technique ◽  
Sensitive Material ◽  
Heating Unit ◽  
Solid State Electronics ◽  
Semiconductor Compounds ◽  
Photodetector Arrays ◽  
Element Base

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals.

Selective sputtering of single crystals of binary semiconductor compounds

1980 ◽  
Vol 52 (3-4) ◽  
pp. 191-199 ◽  
Author(s):  
S. P. Linnik ◽  
M. A. Buleev ◽  
V. E. Yurasov ◽  
V. I. Zaporozhchenko ◽  
V. S. Chernysh
Keyword(s):  
Single Crystals ◽  
Semiconductor Compounds

Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

1982 ◽  
Vol 41 (9) ◽  
pp. 841-843 ◽  
Author(s):  
Y. Kokubun ◽  
S. Washizuka ◽  
J. Ushizawa ◽  
M. Watanabe ◽  
T. Fukuda
Keyword(s):  
Single Crystals ◽  
Czochralski Technique ◽  
High Quality ◽  
Computer Controlled

scholarly journals Thermodynamic properties of single crystals based on lithium tungstate by reaction and DSC calorimetry

2021 ◽  
Vol 2119 (1) ◽  
pp. 012140
Author(s):  
N I Matskevich ◽  
V N Shlegel ◽  
D A Samoshkin ◽  
S V Stankus ◽  
A N Semerikova ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Temperature Gradient ◽  
Single Crystals ◽  
Czochralski Technique ◽  
Formation Enthalpies ◽  
Stabilization Energies ◽  
Mo Content ◽  
First Time ◽  
Lithium Tungstate ◽  
Dsc Calorimetry

Abstract For the first time, single crystals of undoped lithium tungstate and lithium tungstate doped by 1.25% molybdenum were grown by the low-temperature-gradient Czochralski technique. The standard formation enthalpies, lattices enthalpies, stabilization energies, and the heat capacity were determined in the temperature range of 320-997 K. The lattice enthalpy dependence on Mo content was constructed.

scholarly journals Automated Growth of Si1−x Ge x Single Crystals with Constant Axial Gradient by Czochralski Technique

2019 ◽  
Vol 55 (2) ◽  
pp. 1900097 ◽  
Author(s):  
Nikolay V. Abrosimov ◽  
Vladimir N. Kurlov ◽  
Robert Schewski ◽  
Jan Winkler
Keyword(s):  
Single Crystals ◽  
Czochralski Technique ◽  
Axial Gradient

Graded X-ray Optics for Synchrotron Radiation Applications

1998 ◽  
Vol 5 (3) ◽  
pp. 239-245 ◽  
Author(s):  
A. Erko ◽  
M. Veldkamp ◽  
W. Gudat ◽  
N. V. Abrosimov ◽  
S. N. Rossolenko ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Magnetron Sputtering ◽  
Single Crystals ◽  
Theoretical Data ◽  
Lattice Parameter ◽  
Structure And Properties ◽  
Czochralski Technique ◽  
Spectral Measurements ◽  
Optical Elements ◽  
X Ray

Using X-ray diffractometry and spectral measurements, the structure and properties of graded X-ray optical elements have been examined. Experimental and theoretical data on X-ray supermirrors, which were prepared by the magnetron sputtering technique using precise thickness control, are reported. Measurements on graded aperiodic Si1−x Ge x single crystals, which were grown by the Czochralski technique, are also presented. The lattice parameter of such a crystal changes almost linearly with increasing Ge concentration. The measurements indicate that Si1−x Ge x crystals with concentrations up to 7 at.% Ge can be grown with a quality comparable to that of pure Si crystals.

The Effect of D-Defect in Silicon Single Crystal on Oxygen Precipitation

1992 ◽  
Vol 262 ◽  
Author(s):  
I. Fusegawa ◽  
N. Fujimaki ◽  
H. Yamagishi
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Process ◽  
Flow Patterns ◽  
Optical Microscope ◽  
Silicon Single Crystal ◽  
Thermal Treatments ◽  
Oxygen Precipitation ◽  
Predominant Factor

ABSTRACTWe investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. The density of D-defect was measured by counting ‘flow patterns’ using an optical microscope after preferential etching in Secco's solution for 30 minutes. It was found that the amount of oxygen precipitation along the growth axis was not affected by D-defect. The predominant factor of the oxygen precipitation after the two-step thermal process is the nuclei of oxygen precipitation generated around 723K during CZ crystal growth.

Semiconductor Crystal Growth and Segregation Problems on Earth And in Space

1981 ◽  
Vol 9 ◽  
Author(s):  
Harry C. Gatos
Keyword(s):  
Crystal Growth ◽  
Growth Parameters ◽  
Structural Defects ◽  
Full Potential ◽  
Semiconductor Crystal ◽  
Growth Property ◽  
Materials Properties ◽  
Solid State Electronics ◽  
Gravitational Forces ◽  
Semiconductor Compounds

ABSTRACTCrystals grown from the melt exhibit compositional and structural defects which limit the exploitation of their full potential in solid state electronics. The origin of these defects is related primarily to gravity-induced convective currents in the melt. In semiconductor compounds additional problems are introduced from variations in stoichiometry. Progress has been made recently in relating qualitatively, and in some instances quantitatively, the growth parameters to the materials properties of the crystals, and in turn to their electronic properties. Overcoming the presence of gravitational forces in space eliminates or minimizes convective interference and, thus, the quantitative assessment of the key growth parameters controlling the chemical and structural perfection of single crystals becomes possible. Results (obtained on earth) will be presented on the growth-property relationships of elemental and compound semiconductors. The advantages, as well as the limitations, that zero gravity conditions present for crystal growth will be discussed.

Sign in / Sign up

Export Citation Format

Share Document