A New Approach for Non-destructive Detection of Dye Molecules by Combination of Terahertz Time-domain Spectra and Raman Spectra

2007 ◽  
Vol 2 (4) ◽  
pp. 295-303 ◽  
Author(s):  
Luo Zhixun . ◽  
Fang Yan . ◽  
Yao jiannian .
2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.


Author(s):  
Teoh King Long ◽  
Ko Yin Fern

Abstract In time domain reflectometry (TDR), the main emphasis lies on the reflected waveform. Poor probing contact is one of the common problems in getting an accurate waveform. TDR probe normalization is essential before measuring any TDR waveforms. The advantages of normalization include removal of test setup errors in the original test pulse and the establishment of a measurement reference plane. This article presents two case histories. The first case is about a Plastic Ball Grid Array package consisting of 352 solder balls where the open failure mode was encountered at various terminals after reliability assessment. In the second, a three-digit display LED suspected of an electrical short failure was analyzed using TDR as a fault isolation tool. TDR has been successfully used to perform non-destructive fault isolation in assisting the routine failure analysis of open and short failure. It is shown to be accurate and reduces the time needed to identify fault locations.


Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Meng Yeow Tay ◽  
Wen Qiu ◽  
J. Alton ◽  
...  

Abstract Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.


Author(s):  
Longhai Liu ◽  
Guoqiang He ◽  
Liang Wu ◽  
Chenglong Zheng ◽  
Silei Wang ◽  
...  

2004 ◽  
Vol 3 (2) ◽  
pp. 165-174 ◽  
Author(s):  
S.E. Jorge Villar ◽  
H.G.M. Edwards

The special characteristics of Raman spectroscopy (relative insensitivity to water, non-destructive detection, sensitivity to bio- and geosignatures, molecular structural composition information, etc.) together with the development of miniaturized Raman spectrometers make the consideration of this technique for future robotic landers on planetary surfaces, particularly Mars, a very interesting option. The development of light and rugged Raman spectrometers limits the possible scope of the instrumentation which has particular importance in the recognition of biomolecular and mineral signatures. In this work, we evaluate the spectral resolution and scan time parameters and the effect that they have on the Raman spectra of extremophilic biomolecules, together with the wavenumber ranges which are critical for the detection of life signals. This is of vital relevance for the design of miniaturized Raman spectrometer systems. From our results, we conclude that for extraterrestrial biological signatures unambiguous Raman spectral identification provided with a minimum of 16 cm−1 spectral resolution is required for the most significant biosignature wavenumber range in the 1700–700 cm−1 region.


Author(s):  
Haritha Joseph ◽  
Sarika Joshi ◽  
Arun Jaiswal ◽  
Donald McNaughton ◽  
Sumit Saxena ◽  
...  

2016 ◽  
Vol 32 (3) ◽  
pp. 286-300 ◽  
Author(s):  
M. K. Smail ◽  
H. R. E. H. Bouchekara ◽  
L. Pichon ◽  
H. Boudjefdjouf ◽  
A. Amloune ◽  
...  

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