Time Domain Reflectometry Technique for Failure Analysis

Fault Isolation ◽

Reference Plane ◽

First Case ◽

Main Emphasis ◽

Plastic Ball ◽

Solder Balls ◽

Abstract In time domain reflectometry (TDR), the main emphasis lies on the reflected waveform. Poor probing contact is one of the common problems in getting an accurate waveform. TDR probe normalization is essential before measuring any TDR waveforms. The advantages of normalization include removal of test setup errors in the original test pulse and the establishment of a measurement reference plane. This article presents two case histories. The first case is about a Plastic Ball Grid Array package consisting of 352 solder balls where the open failure mode was encountered at various terminals after reliability assessment. In the second, a three-digit display LED suspected of an electrical short failure was analyzed using TDR as a fault isolation tool. TDR has been successfully used to perform non-destructive fault isolation in assisting the routine failure analysis of open and short failure. It is shown to be accurate and reduces the time needed to identify fault locations.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

10.31399/asm.cp.istfa2018p0043 ◽

2018 ◽

Author(s):

Daechul Choi ◽

Yoonseong Kim ◽

Jongyun Kim ◽

Han Kim

Keyword(s):

Time Domain ◽

Quantum Interference ◽

Flip Chip ◽

Imaging System ◽

Fault Isolation ◽

Magnetic Current ◽

Isolation Techniques ◽

Super Conducting ◽

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package

10.31399/asm.cp.istfa2012p0021 ◽

2012 ◽

Author(s):

Lihong Cao ◽

Manasa Venkata ◽

Meng Yeow Tay ◽

Wen Qiu ◽

J. Alton ◽

...

Keyword(s):

Time Domain ◽

Flip Chip ◽

Fault Isolation ◽

Experimental Results ◽

Terahertz Pulse ◽

Isolation And Identification ◽

Isolation Technique ◽

Abstract Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.

Non-Destructive Failure Analysis of Power Devices via Time- Domain Reflectometry

10.1109/case49439.2021.9551614 ◽

2021 ◽

Author(s):

Kanuj Sharma ◽

Simon Kamm ◽

Valentyna Afanasenko ◽

Kevin Munoz Baron ◽

Ingmar Kallfass

Keyword(s):

Failure Analysis ◽

Time Domain ◽

Power Devices ◽

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

Electro Optical Terahertz Pulse Reflectometry—A Fast and Highly Accurate Non-Destructive Fault Isolation Technique for 3D Flip Chip Packages

10.31399/asm.cp.istfa2013p0264 ◽

2013 ◽

Author(s):

Stephane Barbeau ◽

Jesse Alton ◽

Martin Igarashi

Keyword(s):

Time Domain ◽

Flip Chip ◽

Fault Isolation ◽

Terahertz Pulse ◽

Through Silicon Via ◽

Isolation Technique ◽

Non Destructive ◽

Non Destructive Techniques

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

Signature Analysis of Device Failure Mechanisms on 2.5D Package IC Devices

10.31399/asm.cp.istfa2016p0432 ◽

2016 ◽

Author(s):

Daniel C. Nuez

Keyword(s):

Failure Analysis ◽

Time Domain ◽

Failure Mechanisms ◽

Device Failure ◽

Analysis Techniques ◽

3D Package ◽

Non Destructive ◽

Interconnect Technology ◽

Scanning Acoustic Microscope

Abstract The growing popularity of 2.5D SSIT (Stacked Silicon Interconnect Technology) & 3D package technology in the IC industry had made it more challenging for manufacturers and packaging assembly sites to perform failure analysis and identifying the root causes of failures. There had been some technical papers written on various failure analysis techniques on 2.5D SSIT and 3D IC packages using a variety of equipment for detecting and localizing failures [1, 2]. This paper explains a non-evasive, non-destructive approach of localizing failures on a 2.5D SSIT package by identifying and recognizing certain waveform patterns that the failing devices exhibit in the scanning acoustic microscope A-Scan and in Time domain reflectometry. There are noticeable waveform patterns that an analyst can recognize and used to determine certain types of failure mechanisms that may be present in the device. Please note that it is very important to use the exact same type of package sample when characterizing and comparing waveform patterns as package variability from vendor to vendor and material contents can certainly affect the results.

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications

10.31399/asm.cp.istfa2010p0084 ◽

2010 ◽

Author(s):

Sebastian Brand ◽

Matthias Petzold ◽

Peter Czurratis ◽

Peter Hoffrogge

Keyword(s):

Image Processing ◽

Failure Analysis ◽

Signal Analysis ◽

Flip Chip ◽

Fault Isolation ◽

Acoustic Microscopy ◽

Specific Information ◽

Full Potential ◽

Time Frequency ◽

Abstract In industrial manufacturing of microelectronic components, non-destructive failure analysis methods are required for either quality control or for providing a rapid fault isolation and defect localization prior to detailed investigations requiring target preparation. Scanning acoustic microscopy (SAM) is a powerful tool enabling the inspection of internal structures in optically opaque materials non-destructively. In addition, depth specific information can be employed for two- and three-dimensional internal imaging without the need of time consuming tomographic scan procedures. The resolution achievable by acoustic microscopy is depending on parameters of both the test equipment and the sample under investigation. However, if applying acoustic microscopy for pure intensity imaging most of its potential remains unused. The aim of the current work was the development of a comprehensive analysis toolbox for extending the application of SAM by employing its full potential. Thus, typical case examples representing different fields of application were considered ranging from high density interconnect flip-chip devices over wafer-bonded components to solder tape connectors of a photovoltaic (PV) solar panel. The progress achieved during this work can be split into three categories: Signal Analysis and Parametric Imaging (SA-PI), Signal Analysis and Defect Evaluation (SA-DE) and Image Processing and Resolution Enhancement (IP-RE). Data acquisition was performed using a commercially available scanning acoustic microscope equipped with several ultrasonic transducers covering the frequency range from 15 MHz to 175 MHz. The acoustic data recorded were subjected to sophisticated algorithms operating in time-, frequency- and spatial domain for performing signal- and image analysis. In all three of the presented applications acoustic microscopy combined with signal- and image processing algorithms proved to be a powerful tool for non-destructive inspection.

ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis ◽

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

10.31399/asm.cp.istfa2001p0069 ◽

2001 ◽

Author(s):

Kendall Scott Wills ◽

Omar Diaz de Leon ◽

Kartik Ramanujachar ◽

Charles P. Todd

Keyword(s):

Form Factor ◽

Failure Analysis ◽

Time Domain ◽

Quantum Interference ◽

Flip Chip ◽

Interfacial Region ◽

Precise Localization ◽

Super Conducting ◽

Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

Failure Analysis of Broken Stitch Bonds in TSSOP Packages Using Scanning Acoustic Microscopy (SAM) and Time Domain Reflectometry (TDR)

10.31399/asm.cp.istfa2004p0623 ◽

2004 ◽

Author(s):

Bilal Abd-AlRahman ◽

Corey Lewis ◽

Todd Simons

Keyword(s):

Failure Analysis ◽

Mechanical Stress ◽

Time Domain ◽

Open Circuit ◽

Acoustic Microscopy ◽

Scanning Acoustic Microscopy ◽

Root Cause ◽

Analysis Application

Abstract A failure analysis application utilizing scanning acoustic microscopy (SAM) and time domain reflectometry (TDR) for failure analysis has been developed to isolate broken stitch bonds in thin shrink small outline package (TSSOP) devices. Open circuit failures have occurred in this package due to excessive bending of the leads during assembly. The tools and their specific application to this technique as well as the limitations of C-SAM, TDR and radiographic analyses are discussed. By coupling C-SAM and TDR, a failure analyst can confidently determine whether the cause of an open circuit in a TSSOP package is located at the stitch bond. The root cause of the failure was determined to be abnormal mechanical stress placed on the pins during the lead forming operation. While C-SAM and TDR had proven useful in the analysis of TSSOP packages, it can potentially be expanded to other wire-bonded packages.