RF and Microwave Test of MMICs from Qualification to Mass Production

2012 ◽  
pp. 333-345
Author(s):  
Mohamed Mabrouk
Keyword(s):  
Integrated Circuits ◽  
Noise Figure ◽  
High Volume ◽  
Low Noise ◽  
Production Environment ◽  
Rf Receiver ◽  
High Volume Production ◽  
Volume Production ◽  
Noise Amplifier ◽  
Insertion Losses

This chapter describes some basic characteristic responses that must be known for each Monolithic Microwave Integrated Circuits. The main parameters such Return Loss, Insertion Losses or Gain, Power at 1dB compression, InterModulation Products or Noise Figure are very important and have to be measured before using the device in final applications. Basic rules of Test and Measurement in RF and Microwaves, as well for characterization on benches as for high volume production using Automatic Test Equipments installed in test platforms, are summarized for helping today’s test engineers to develop their own test solutions. The device, that was characterized on bench and tested in production environment, is a monolithic, integrated low noise amplifier (LNA) and mixer usable in RF receiver Front-End applications for Personal Communications functioning on frequency wideband between 0.1 and 2.0 GHz.

Flexible Hand-Free Microelectronics assembly Line for the Chip and Wire industry

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000790-000826
Author(s):  
Prakash Bhartia ◽  
Jim Angeloni ◽  
Will Bolinger
Keyword(s):  
Integrated Circuits ◽  
Assembly Line ◽  
High Volume ◽  
Microwave Integrated Circuits ◽  
Fully Integrated ◽  
Die Attach ◽  
High Volume Production ◽  
Volume Production ◽  
Overseas Operations ◽  
Automated Lines

This paper presents Natel's effort in pioneering the design and development of the first Touch-Free Microelectronics assembly Line for the Chip and Wire industry. When the Surface Mount Technology (SMT) industry first started, it began as a series of discrete pieces of equipment that performed the functions required to populate Circuit Cards. Over the years, the technology has evolved as has the industry such that fully integrated, automated lines are available where the circuit cards are installed at one end of the line, reels or tubes of components, such as packaged resistors, inductors, capacitors and semiconductors etc., loaded, the machine programmed and assembled circuit cards are available at the other end. However, no such line has been developed for the Chip and Wire industry, with most assembly houses still using individual stand alone die attach, bonders, plasma clean machines to populate substrates. Natel has developed the first of its kind integrated Auto line for the Chip and Wire industry, which conceptually replicates a SMT line. This Auto Line is touch–free and incorporates die attach ( including eutectic), ball and ribbon bonding , plasma clean and in line testing. The line is ideal for high volume production of Hybrid and Microwave Integrated Circuits. The obvious advantages of this approach are the “ hands-free” continuous flow aspect with significant reduction in product defects, increase in efficiency and cost reduction thereby increasing competitiveness against low labor rate overseas operations. This paper will provide details of the line, and discuss what additional capabilities can be added and hopefully promote the future development of the Chip and Wire industry built on this pioneering development.

scholarly journals Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 40-47
Author(s):  
Bijaya Shrestha
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Current Consumption ◽  
Additional Noise ◽  
Noise Amplifier ◽  
Rf Signal ◽  
Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.

The interface between device and circuit design

1985 ◽  
Vol 63 (6) ◽  
pp. 699-701
Author(s):  
R. C. Foss ◽  
A. L. Silburt
Keyword(s):  
Integrated Circuits ◽  
Circuit Simulation ◽  
Performance Standards ◽  
High Volume ◽  
Circuit Element ◽  
Proper Understanding ◽  
User Input ◽  
High Volume Production ◽  
Volume Production ◽  
Simulation Task

A proper understanding of transistor and other circuit-element behavior is critical in the design process of integrated circuits intended for high-volume production or exacting performance standards. Models of such elements are a key ingredient in the circuit-simulation task, which provides design-verification feedback to chip designers. Failures in this process can have costly consequences. Much of the effort put into modelling work contributes very little to real needs as practical failures are usually at the much more gross level of user input or program-coding problems.

scholarly journals Adaptive low-power CMOS LNA in internet of things based wireless sensor networks

2020 ◽  
Vol 9 (3) ◽  
pp. 616
Author(s):  
Abdelhamid Helali ◽  
Feten Ouni ◽  
Mohsen Nasri ◽  
Hassen Maaref
Keyword(s):  
Internet Of Things ◽  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Sensor Nodes ◽  
Wireless Sensor ◽  
Rf Receiver ◽  
Noise Amplifier ◽  
Battery Energy

With the increasing need for the Internet of things (IoT), wireless communication has become a popular technology for the network. This explosion of IoT wireless applications makes the power consumption a key metric in the design of wireless sensor nodes. The major constraint of the wireless sensors nodes is battery energy, which is the mainly challenging problem in designing IoT network. these constraints have imposed new yet stringent specs to the design of RF front-ends. The design of adaptive radio-frequency circuits, in order to reduce power consumption, is of interest. In a RF receiver chain, the Low Noise Amplifier (LNA) stand as critical elements on the power consumption.To address this purpose, this paper proposes a design strategy for an adaptive Low Noise Amplifier as the first element of the receiver chain. Hence the proposed LNA achieves the correct QoS for various scenario of communications. Using the proposed LNA, a significant trade-off between a conversion gain, noise figure and energy consumption is presented.  

scholarly journals A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 785
Author(s):  
Juan L. Castagnola ◽  
Fortunato C. Dualibe ◽  
Agustín M. Laprovitta ◽  
Hugo García-Vázquez
Keyword(s):  
Integrated Circuits ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Optimization Approach ◽  
Scattering Parameters ◽  
Rf Integrated Circuits ◽  
Design And Optimization ◽  
Noise Amplifier

This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.

scholarly journals Design of Broadband W-Band Waveguide Package and Application to Low Noise Amplifier Module

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 523 ◽  
Author(s):  
Jihoon Doo ◽  
Woojin Park ◽  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Noise Figure ◽  
Space Structure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Waveguide Section ◽  
External Bias ◽  
W Band ◽  
Noise Amplifier

In this paper, the broadband millimeter-wave waveguide package, which can cover the entire W-band (75–110 GHz) is presented and applied to build a low noise amplifier module. For this purpose, a broadband waveguide-to-microstrip transition was designed using an extended E-plane probe in a low-loss and thin dielectric substrate. The end of the probe substrate was firmly fixed on to the waveguide wall in order to minimize the performance degradation caused by the probable bending of the substrate. In addition, we predicted and analyzed in-band resonances by the simulations that are caused by the empty spaces in the waveguide package to accommodate integrated circuits (ICs) and external bias circuits. These resonances are removed by designing an asymmetrical bias space structure with a radiation boundary at an external bias connection plane. The bond-wires, which are used to connect the ICs with the transition, can generate impedance mismatches and limit the bandwidth performance of the waveguide package. Their effect is carefully compensated for by designing the broadband two-section matching circuits in the transition substrate. Finally, the broadband waveguide package is designed using a commercial three-dimensional electromagnetic structure simulator and applied to build a W-band low noise amplifier module. The measurement of the back-to-back connected waveguide-to-microstrip transition including the empty spaces for the ICs and bias circuits showed the insertion loss less than 3.5 dB and return loss higher than 13.3 dB across the entire W-band without any in-band resonances. The measured insertion loss includes the losses of 8.7 mm-long microstrip line and 41.8 mm-long waveguide section. The designed waveguide package was utilized to build the low noise amplifier module that had a measured gain greater than 14.9 dB from 75 GHz to 105 GHz (>12.9 dB at the entire W-band) and noise figure less than 4.4 dB from 93.5 GHz to 94.5 GHz.

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