Experimental Investigation of Brittle to Ductile Transition of Single Crystal Silicon by Single Grain Grinding

2007 ◽  
pp. 433-438
Author(s):  
Feng Wei Huo ◽  
Zhu Ji Jin ◽  
Fu Ling Zhao ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Experimental Investigation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Brittle To Ductile Transition ◽  
Single Grain

Experimental Investigation of Brittle to Ductile Transition of Single Crystal Silicon by Single Grain Grinding

2007 ◽  
Vol 329 ◽  
pp. 433-438 ◽  
Author(s):  
Feng Wei Huo ◽  
Zhu Ji Jin ◽  
Fu Ling Zhao ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Single Crystal ◽  
Transition Point ◽  
Single Crystal Silicon ◽  
Depth Of Cut ◽  
Surface Cracks ◽  
Crystal Silicon ◽  
Brittle To Ductile Transition ◽  
Ductile Mode ◽  
Single Grain ◽  
Brittle Mode

Grinding of single crystal silicon may be achieved by two modes of material removal: ductile mode and brittle mode. Knowing of the brittle to ductile transition point at which the grinding process changes from the brittle mode to ductile mode is critically important for the realization of ductile mode grinding. This paper uses a new single grain diamond grinding method developed recently by the authors to investigate the brittle to ductile transition during grinding of single crystal silicon in all around. The results indicate that there exist four stages of brittle to ductile transition as the depth of cut is reduced: firstly, the surface cracks outside the grinding groove disappeared, secondlycracks on the bottom of the groove disappeared, then the lateral cracks ceased in the subsurface region, and finally the median crack is suppressed beneath the grooves. It is not until the depth of cut reaches the last transition point that a crack-free groove can be produced, therefore, the last transition stage is decisive. The critical depth of cut delineating the brittle to ductile transition point derived based on this criterion is 40 nanometers, which is much lower than that based on surface cracks.

Thrust Force Directional Vibration-Assisted Ductile-Mode Grinding of Single-Crystal Si

2010 ◽  
Vol 126-128 ◽  
pp. 627-632 ◽  
Author(s):  
Kenichiro Imai ◽  
Hiroshi Hashimoto
Keyword(s):  
Single Crystal ◽  
Thrust Force ◽  
Removal Rate ◽  
Single Crystal Silicon ◽  
Grinding Force ◽  
Depth Of Cut ◽  
Grinding Wheel ◽  
Crystal Silicon ◽  
Ductile Mode ◽  
Single Grain

Under optimum grinding conditions, a constant grinding force is exerted on a workpiece during ductile-mode grinding of BK7 glass. Based on the results, the cutting force, specific grinding energy, and depth of cut for a single grain were calculated. It was found that a single grain was easily removed from the material. However, grinding is impossible because surface burning occurs on the workpiece. In order to avoid burning, a single-crystal silicon wafer (1,0,0) surface was ground with thrust force directional vibration-assisted grinding. The normal grinding force with vibration was comparatively low, but was quite stable. The removal rate was approximately three times greater than that without vibration. The results indicate that the successive abrasive grains of the grinding wheel remove the material intermittently.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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