Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

Materials Science Forum - Silicon Carbide and Related Materials 2006 ◽

10.4028/0-87849-442-1.647 ◽

2007 ◽

pp. 647-650

Author(s):

Jeong Hyun Moon ◽

Dong Hwan Kim ◽

Ho Keun Song ◽

Jeong Hyuk Yim ◽

Wook Bahng ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.647 ◽

2007 ◽

Vol 556-557 ◽

pp. 647-650 ◽

Author(s):

Jeong Hyun Moon ◽

Dong Hwan Kim ◽

Ho Keun Song ◽

Jeong Hyuk Yim ◽

Wook Bahng ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Current Density ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Field ◽

Mos Capacitors ◽

Dielectric Layers ◽

Capacitance Voltage ◽

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

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Electrical properties of Ge metal–oxide–semiconductor capacitors with high-kLa2O3gate dielectric incorporated by N or/and Ti

Journal of Semiconductors ◽

10.1088/1674-4926/37/6/064006 ◽

2016 ◽

Vol 37 (6) ◽

pp. 064006

Author(s):

Xu Huoxi ◽

Xu Jingping

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters ◽

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures

Advances in Electronics and Electron Physics Volume 58 - Advances in Electronics and Electron Physics ◽

10.1016/s0065-2539(08)61021-5 ◽

1982 ◽

pp. 1-79 ◽

Author(s):

J.N. Churchill ◽

F.E. Holmstrom ◽

T.W. Collins

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Induced Changes

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Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors

Thin Solid Films ◽

10.1016/j.tsf.2019.03.009 ◽

2019 ◽

Vol 682 ◽

pp. 156-162 ◽

Author(s):

N. Manikanthababu ◽

V. Saikiran ◽

T. Basu ◽

K. Prajna ◽

S. Vajandar ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Ion Irradiation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4819108 ◽

2013 ◽

Vol 114 (8) ◽

pp. 084108 ◽

Author(s):

J. W. Liu ◽

M. Y. Liao ◽

M. Imura ◽

H. Oosato ◽

E. Watanabe ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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