Magnetization Chirality of Ni-Fe and Ni-Fe/Mn-Ir Asymmetric Ring Dots for High-Density Memory Cells

Author(s):  
Isao Sasaki ◽  
Ryoichi Nakatani ◽  
Tetsuo Yoshida ◽  
Keiichi Otaki ◽  
Yasushi Endo ◽  
...  
Keyword(s):  
1974 ◽  
Vol 9 (5) ◽  
pp. 234-238 ◽  
Author(s):  
K. Goser ◽  
M. Pomper ◽  
J. Tihanyi
Keyword(s):  

1983 ◽  
Vol 130 (3) ◽  
pp. 127 ◽  
Author(s):  
B.S. Kiyoo Itoh ◽  
B.S. Hideo Sunami
Keyword(s):  

2021 ◽  
Author(s):  
Dooyeun Jung ◽  
Youngha Choi ◽  
Jae In Lee ◽  
Bu-il Nam ◽  
Ki-Young Dong ◽  
...  

Abstract A novel electrical screening method of channel hole bending (ChB) defects is proposed for the implementation of high-density vertical NAND (VNAND) flash memory. The ChB defects induces the leakage current between the two adjacent channel holes, which leads to fatal failure in storage systems. Thus, it is one of the key requirements for VNAND mass production to screen ChB defects electrically in advance. In the proposed screening method, a 3D checkerboard (CKBD) pattern is introduced, which consists of alternating programed (‘0’) and inhibited (‘1’) memory cells in a diagonal and horizontal direction. By measuring the leakage current between the channel holes, ChB defects can be successfully detected electrically.


1996 ◽  
Author(s):  
S. Deleonibus ◽  
M. Heitzmann ◽  
Y. Gobil ◽  
F. Martin ◽  
O. Demolliens ◽  
...  

2016 ◽  
Vol 44 (2) ◽  
pp. 413-426 ◽  
Author(s):  
Qing Guo ◽  
Karin Strauss ◽  
Luis Ceze ◽  
Henrique S. Malvar

2004 ◽  
Vol 95 (11) ◽  
pp. 6714-6716 ◽  
Author(s):  
Ryoichi Nakatani ◽  
Tetsuo Yoshida ◽  
Yasushi Endo ◽  
Yoshio Kawamura ◽  
Masahiko Yamamoto ◽  
...  

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