Failure Analysis on Tube Socket Crack of Supercritical Boiler Water Wall Header

2012 ◽  
Vol 204-208 ◽  
pp. 4616-4619
Author(s):  
Xiang Feng Zheng ◽  
Yun Jian Jiang ◽  
Yan Ting Feng ◽  
Qing Wang ◽  
Xiao Guang Niu ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Thermal Stress ◽  
Chemical Analysis ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Ductile Fracture ◽  
Mechanical Analysis ◽  
Boiler Water ◽  
Water Wall ◽  
Scanning Electron

Through methods, such as microscope analysis, mechanical analysis, chemical analysis, metallography examination and scanning electron microscope etc, the causes resulting in lots of tube socket cracks of supercritical boiler water wall header (15CrMo) have been analyzed. The result indicates failure of the supercritical boiler water wall header tube sockets are the ductile fracture and belong to thermal stress crack. The unreasonable structure, excessive thermal stress between header and sockets are the primarily inducement of crack failure.

Failure Analysis on Heating Surface Tube Crackof High Temperature Reheater in Station Boiler

2013 ◽  
Vol 804 ◽  
pp. 333-336
Author(s):  
Yun Jian Jiang ◽  
Xiang Feng Zheng ◽  
Rong Gang Xue ◽  
Guo Zhen Dong ◽  
Ji Feng Zhao ◽  
...  
Keyword(s):  
Residual Stress ◽  
Electron Microscope ◽  
High Temperature ◽  
Chemical Analysis ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Heating Surface ◽  
Welding Residual Stress ◽  
Microscope Analysis ◽  
Scanning Electron

Through methods, such as microscope analysis, chemical analysis, metallography examination and scanning electron microscope etc, the causes resulting in high temperature reheater tube cracking of station boiler have been analyzed. The result indicates the crack is reheat crack, and structure stress, higher hardness and excessive welding residual stress are the primary inducement of tube joint crack.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

Failure Analysis and Welding Repair for Water Wall Connection Tube Burst of SA210C Steel

2014 ◽  
Vol 998-999 ◽  
pp. 422-425 ◽  
Author(s):  
Xiang Feng Zheng ◽  
Nan Wu ◽  
Yun Jian Jiang ◽  
Wen Bin Li ◽  
Xiao Jun Hao ◽  
...  
Keyword(s):  
Residual Stress ◽  
Chemical Analysis ◽  
Failure Analysis ◽  
Heat Input ◽  
Mechanical Analysis ◽  
Raw Material ◽  
Material Defects ◽  
Microscope Analysis ◽  
Water Wall ◽  
Water Wall Tube

Through methods, such as microscope analysis, mechanical analysis, chemical analysis, metallography examination etc, the causes resulting in water wall tube bursting of 300MW station boiler have been analyzed. The raw material defects is the primarily inducement of bursting failure. In welding tube, the measures of reducing residual stress, such as lower welding heat input, reducing thickness of welding layer and so on, were taken. The welding repair succeeded greatly.

Forensic Uses of Deflection (Y) Modulation and X-Ray Dot Mapping

1985 ◽  
Vol 43 ◽  
pp. 512-513
Author(s):  
S. Basu
Keyword(s):  
Signal Processing ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Secondary Electron ◽  
Energy Dispersive ◽  
X Ray ◽  
Image Forensic ◽  
Scanning Electron

The imaging capabilities of the scanning electron microscope in conjunction with an energy dispersive x-ray spectrometer (SEM-EDX) allow both topographical and compositional displays that can be readily interpreted. Illustrative evidence of this type would be valuable in forensic determinations, since the associated techniques of image formation, chemical analysis and sample preparation are well understood and documented. Various methods of signal processing are also available, which allow intuitive, stylistic and synthetic interpretation of the image. Forensic applications of two such methods will be stressed in this report using a AMR 1000 SEM. These are deflection modulation (DM) or “Y-modulation” of secondary electron signal^ and x-ray dot mapping.

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