Simulation and Experiment of Three-Phase Inverter Based on SVPWM

2010 ◽  
Vol 29-32 ◽  
pp. 709-715
Author(s):  
Zhi Hong Wu ◽  
Guo Qiang Chen ◽  
Yuan Zhu ◽  
Guang Yu Tian ◽  
Liu Qun Fan

Aiming at the simulation of the three-phase inverter and SVPWM, the paper introduces their principles. A new method to build SVPWM simulation block in MATLAB/Simulink is proposed. The on-voltage-drop of the power devices is taken into account; the switch and diode are modeled as the connection in series of a resistance and a voltage source in simulation. The simulation and experiment results verify the correctness of simulation models, and show that the on-voltage-drop of the power devices has effects on the phase current and phase/line voltage, especially when the inverter works at a light load state.

2011 ◽  
Vol 467-469 ◽  
pp. 968-971
Author(s):  
Guo Qiang Chen ◽  
Jian Li Kang

Aiming at the spectrum analysis, the classification of PWM strategies based on digital implementation for the three-phase inverter is given. Then the paper summaries the three spectrum analysis methods: theoretical expression, computer simulation and experiment. The structure and procedure of each method are discussed. Each method has advantages and disadvantages. The experiment and computer simulation can be used to analyze any PWM strategy. The theoretical expression is always used to analyze the deterministic strategies.


2020 ◽  
Vol 37 ◽  
pp. 134-148
Author(s):  
H-C Cheng ◽  
Y-H Shen ◽  
W-H Chen

Abstract This study aims to characterize the switching transients and power losses of silicon (Si) power metal–oxide–semiconductor field-effect transistor (MOSFET) in an SOT-227 package (hereinafter named “power MOSFET package”) and Si power MOSFET-based three-phase MOSFET inverter during load cycles through numerical modeling and experimental validation. The three-phase inverter comprises six power MOSFET packages as switches for brushless direct current motor drive. First of all, three-dimensional electromagnetic analyses are performed to extract the parasitic parameters of these two power devices. Subsequently, the device model and the previously derived package model of the power MOSFET are combined together in circuit simulation of a double pulse test (DPT). The calculated waveform profiles and switching times are compared with those obtained from the DPT experiment. Likewise, an effective compact circuit simulation model of the three-phase six-switch inverter, considering the parasitic effects, is developed for the switching loss estimation in the first switching interval of the six-step switching sequence. At last, parametric study is performed to explore, respectively, the influences of some crucial factors on the parasitic inductances and switching transients of the power MOSFET package and the switching losses of the three-phase inverter.


2020 ◽  
Vol 10 (22) ◽  
pp. 8042
Author(s):  
Jae-Chang Kim ◽  
Sang-Shin Kwak

In this study, the frequency characteristics of series DC arcs are analyzed according to the types of frequency fluctuations caused by inverters in photovoltaic (PV) systems. These frequency fluctuation types used in analysis include centralized frequency fluctuations by three-phase inverter, spread frequency fluctuations by three-phase inverter, and centralized frequency fluctuations by single-phase inverter. To collect arc current data, the frequency fluctuations are generated by inverters in the arc-generating circuit, designed by referring to UL1699B, and the arcs are generated by separating the arc rods of the arc generator. The frequency analysis of the arc current data, collected using an oscilloscope, is conducted using MATLAB. From the results of the frequency characteristics analysis, it is confirmed that the frequencies in the range from 5 to 40 kHz increase after arc generation regardless of the type of frequency fluctuation. In addition, the smaller the current, the greater the increase in frequencies between 5 and 40 kHz after arc generation. Further, in case of arc currents with centralized frequency fluctuations, for larger switching frequencies, the 5 to 40 kHz components increase to a greater extent after arcing.


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