The Double-Layer Matching Design of Broad-Band Foam Cement Absorbing Panel for Electromagnetic Pollution Control

2013 ◽  
Vol 401-403 ◽  
pp. 924-928 ◽  
Author(s):  
Fan Wu ◽  
Wan Jun Hao ◽  
Yue Fang Zhang ◽  
Ming Ming Wang ◽  
Dong Wei Chen ◽  
...  
Keyword(s):  
Double Layer ◽  
Pollution Control ◽  
High Performance ◽  
Simulation Analysis ◽  
Dielectric Material ◽  
Broad Band ◽  
Electromagnetic Environment ◽  
Resistive Film ◽  
Matching Design ◽  
Electromagnetic Pollution

Based on the principle of electromagnetic wave absorption, through the double-layer matching design and simulation analysis, taking foam cement panel as the dielectric material, combining with the resistive film, the paper has successfully prepared high-performance and broad-band foam cement absorbing panel for electromagnetic pollution control. The result shows, with the use of double-matching design that combines 140 Ω/□ resistive film with foam cement absorbing panel whose each layer thickness is 1.4 cm, in the S band , 100% of bandwidth below-10 dB and 95% of bandwidth below-14 dB can be reached, a maximum absorption of-19.6 dB at 2.45 GHz, the width of the absorption is far more than that of λ/4 type absorber. New materials can be used for the improvement of indoor electromagnetic environment and pollution control.

Broadening Design and Preparation of MDF Absorber for Electromagnetic Pollution Control in S-Band

2013 ◽  
Vol 405-408 ◽  
pp. 2754-2759
Author(s):  
Wan Jun Hao ◽  
Ming Ming Wang ◽  
Yue Fang Zhang ◽  
Fan Wu ◽  
Dong Wei Chen ◽  
...  
Keyword(s):  
Pollution Control ◽  
Simulation Analysis ◽  
Dielectric Material ◽  
New Materials ◽  
Electromagnetic Environment ◽  
Theoretical Design ◽  
New Type ◽  
Electromagnetic Pollution ◽  
And Control ◽  
High Absorption

This paper reported a new type MDF absorber of high absorption and Broadband was successfully prepared, according to the Electromagnetic Wave Absorbing Theory, by means of the theoretical design and simulation analysis by using MDF as the dielectric material and And with the resistance film composite. Results shown that the resistance of resistive film was 195Ω/□, the monolayer combined sample with thickness as 1.4cm in 2~4 GHz frequency bands, the range of absorbing over -20dB could achieve 50%, and all absorption could exceed -15dB in the whole S-band, the maximum absorption peak was -25dB, moreover, the absorption bandwidth of MDF was more than λ/4 Type EWM-absorber. The new materials could be used to improve residential electromagnetic environment and control pollution.

High performance spiro ammonium electrolyte for Electric Double Layer Capacitors

2017 ◽  
Vol 360 ◽  
pp. 41-47 ◽  
Author(s):  
Donald DeRosa ◽  
Seiichiro Higashiya ◽  
Adam Schulz ◽  
Manisha Rane-Fondacaro ◽  
Pradeep Haldar
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
High Performance ◽  
Double Layer Capacitors ◽  
Electric Double Layer Capacitors

Preparation of porous carbon electrodes from semen cassiae for high-performance electric double-layer capacitors

2018 ◽  
Vol 42 (9) ◽  
pp. 6763-6769 ◽  
Author(s):  
Ji-Shi Wei ◽  
Suige Wan ◽  
Peng Zhang ◽  
Hui Ding ◽  
Xiao-Bo Chen ◽  
...  
Keyword(s):  
Double Layer ◽  
Porous Carbon ◽  
Electric Double Layer ◽  
High Performance ◽  
Carbon Electrodes ◽  
Activation Process ◽  
Effective Activation ◽  
Porous Carbon Electrodes ◽  
Double Layer Capacitors ◽  
Electric Double Layer Capacitors

A mild and effective activation process for high-performance carbon based electric double-layer capacitors.

Low Temperature Curing - Aqueous Base Developable Photoimageable Dielectric for WLP (Wafer Level Packaging)

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 000986-001015
Author(s):  
Eric Huenger ◽  
Joe Lachowski ◽  
Greg Prokopowicz ◽  
Ray Thibault ◽  
Michael Gallagher ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dielectric Material ◽  
Broad Band ◽  
Dielectric Materials ◽  
Next Generation ◽  
Wafer Level ◽  
Moore’S Law ◽  
Moore's Law ◽  
3D Chip Stacking ◽  
The Impact

As advanced packaging application space evolves and continues to deviate from the conventional shrinkage pathway predicted by Moore's law, material suppliers need to continue to work with OEMs, OSATs and Foundries to identify specific opportunities. One such opportunity continues to present itself in developing new materials to support new platforms for next generation products to support 3D chip stacking and TSV applications. The newer material sets can be established to meet more challenging design requirements associated with the demands, presented by the application from both a physical/lithographical processing and design perspective. Next generation packages requires the development of new dielectric materials that can support both the physical demands of 3D chip stacking and TSV package design aspects while maintaining strengths of the existing material platform. While vertical integration necessitates the use of thinned substrates and its associated integration challenges, there is a continuing need to support horizontal shrinkage typical of the Moore's Law, which pushes the lithography envelope requiring finer pitch and smaller feature resolution capability. This presentation identifies the strategy we have taken and highlights approach taking in the development of low temperature curable photoimageable dielectric materials with enhanced lithographic performance. We will discuss the methodology used to create benzocyclobutene based dielectric material curable at 180 °C and show how lithographic performance can be tuned to allow sub 5 micron via using broad band illumination. Finally we will review the impact of low temperature processing on the mechanical, thermal and electrical properties of this novel photoimageable dielectric material.

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