scholarly journals Dynamic Study of a Capacitive MEMS Switch with Double Clamped-Clamped Microbeams

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hatem Samaali ◽  
Fehmi Najar ◽  
Slim Choura
Keyword(s):  
Transmission Line ◽  
Electrostatic Force ◽  
Equations Of Motion ◽  
Actuation Voltage ◽  
Transient Behavior ◽  
Mems Switch ◽  
Grid Points ◽  
Capacitive Mems ◽  
Better Than ◽  
Rf Performances

We study a capacitive MEMS switch composed of two clamped-clamped exible microbeams. We first develop a mathematical model for the MEMS switch where the upper microbeam represents the ground transmission line and the lower one represents the central transmission line. An electrostatic force is applied between the two microbeams to yield the switch to its ON and OFF states. We derive the equations of motion of the system and associated boundary conditions and solve the static and dynamic problems using the differential quadratic method. We show that using only nine grid points gives relatively accurate results when compared to those obtained using FEM. We also examine the transient behavior of the microswitch and obtain results indicating that subsequent reduction in actuation voltage, switching time, and power consumption are expected along with relatively good RF performances. ANSYS HFSS simulator is used in this paper to extract the RF characteristics of the microswitch. HFSS simulation results show that the insertion loss is as low as −0.31 dB and that the return loss is better than −12.41 dB at 10 GHz in the ON state. At the OFF state, the isolation is lower than −23 dB in the range of 10 to 50 GHz.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

The Effect of Dielectric Charging on Capacitive MEMS Switch

2014 ◽  
Vol 511-512 ◽  
pp. 732-736
Author(s):  
Qin Wen Huang ◽  
Xiang Guang Li ◽  
Yun Hui Wang ◽  
Yu Bin Jia
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Deposition Process ◽  
Dielectric Surface ◽  
One Dimensional ◽  
Mems Switches ◽  
Dielectric Charging ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Capacitive Mems

Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumulated charge density and actuation voltage shift were simulated. The results illustrate that rougher surface can reduce dielectric charging, so the dielectric layer should be fabricated much rougher during deposition process. But the capacitance ratio of switch will be decreased with rougher surface, which can cause a reduction of switch performance. Thus the dielectric surface roughness should be balanced in reliability and isolation.

Design and Simulation of a High-Isolation Series/Shunt Mixed MEMS Switch

2013 ◽  
Vol 457-458 ◽  
pp. 1644-1647
Author(s):  
Zhong Liang Deng ◽  
Sen Fan ◽  
Hao Wei ◽  
Cai Hu Chen ◽  
Hua Gong
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Gold Surface ◽  
Mixed Structure ◽  
Micro Fabrication ◽  
High Isolation ◽  
Mems Switch ◽  
Folded Structure ◽  
Wide Range ◽  
Better Than

In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.

MEMS SPDT microswitch with low actuation voltage for RF applications

2015 ◽  
Vol 32 (2) ◽  
pp. 55-62 ◽  
Author(s):  
Hatem Samaali ◽  
Fehmi Najar ◽  
Bouraoui Ouni ◽  
Slim Choura
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Electrostatic Force ◽  
Differential Quadrature Method ◽  
Actuation Voltage ◽  
Microelectromechanical System ◽  
Content Type ◽  
Reduced Order ◽  
Mems Switch ◽  
Novel Design

Purpose – This paper aims to propose a novel design of an ohmic contact single-pole double-throw (SPDT) microelectromechanical system (MEMS) microswitch for radio frequency applications. Design/methodology/approach – The proposed microswitch (SPDT design) shares antenna between transmitter and receiver in a wireless sensor. An electrical voltage is used to create an electrostatic force that controls the ON/OFF states of the microswitch. First, the authors develop a mathematical model of the proposed microswitch and propose a reduced-order model of the design, based on the differential quadrature method, which fully incorporates the electrostatic force nonlinearities. The authors solve the static, transient and dynamic behavior and compare the results with finite element solutions. Then, the authors examine the dynamic solution of the switch under different actuation waveforms. Findings – The obtained results showed a significant reduction in actuation voltage, pull-in bandwidth and switching time. Originality/value – In this paper, a new design of SPDT MEMS switch is proposed, the SPDT switch needs low voltage to be actuated and it can be easily integrated with integrated circuits.

scholarly journals Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Deepak Bansal ◽  
Anuroop Bajpai ◽  
Prem Kumar ◽  
Maninder Kaur ◽  
Kamljit Rangra
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Electromagnetic Response ◽  
Mems Devices ◽  
Switching Speed ◽  
Capacitive Switch ◽  
Mems Switch ◽  
Line Insertion ◽  
Better Than

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Accuracy Analysis of DEM Based on Coons Surface

2011 ◽  
Vol 65 ◽  
pp. 214-217
Author(s):  
Yao Ge Wang ◽  
Peng Yuan Wang
Keyword(s):  
Spatial Pattern ◽  
Spatial Autocorrelation ◽  
Boundary Curve ◽  
Digital Elevation ◽  
Grid Points ◽  
Elevation Model ◽  
Global Spatial Autocorrelation ◽  
Core Problem ◽  
Dem Model ◽  
Better Than

Interpolation is the core problem of Digital Elevation Model (DEM). The Coons DEM model is better than bilinear interpolation and moving surface fitting. It is constructed by grid boundary curve, the curve interpolates by some adjoining grid points. Its spatial pattern of error is random in global area, there is no significant global spatial autocorrelation, but it is an increasing trend along with the terrain average gradient increases.There is significant local spatial autocorrelation, the spatial pattern of error converges strongly in local areas.

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