The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

Lateral RF MEMS Switch Based on Surface Micromachining Process

2011 ◽  
Vol 483 ◽  
pp. 457-460
Author(s):  
Guo Ping Du ◽  
Jian Zhu ◽  
Yuan Wei Yu ◽  
Shi Xing Jia ◽  
Li Li Jiang
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Surface Micromachining ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Large Contact Area ◽  
Rf Performance ◽  
Structure Layer ◽  
Better Than

In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.

scholarly journals Study and analysis of novel RF MEMS switched capacitor

2018 ◽  
Vol 7 (2.31) ◽  
pp. 34
Author(s):  
K Vikas ◽  
S Sunithamani ◽  
M Yagnika ◽  
S Siva Krishna ◽  
S Avanthi
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Mechanical Analysis ◽  
Air Gap ◽  
Electromagnetic Analysis ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
Mems Switch

In this paper we have designed and analyzed shunt capacitive fixed-fixed RF MEMS switch to maintain low actuation voltage. The pull - in voltage of the proposed switch is 7.7V for 2 um air gap. The electromagnetic analysis for the designed structure is, return loss is -23dB in the range of 1-40 GHz, insertion loss is -0.04dB at a frequency range of 1-40 GHz and isolation is - 38.5dB obtained at a frequency of 23.5 GHz. Mechanical analysis for the designed structure is also performed using FEM tool.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage

2017 ◽  
Vol 93 (1-4) ◽  
pp. 661-670 ◽  
Author(s):  
Yasser Mafinejad ◽  
Abbas Kouzani ◽  
Khalil Mafinezhad ◽  
Reza Hosseinnezhad
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Low Insertion Loss

Microwave Performance Simulation of RF-MEMS Switch

2014 ◽  
Vol 981 ◽  
pp. 564-567 ◽  
Author(s):  
Rui Wu ◽  
Ming Xin Song
Keyword(s):  
Insertion Loss ◽  
Dielectric Layer ◽  
Return Loss ◽  
Rf Mems ◽  
Groove Depth ◽  
Calculation Model ◽  
Performance Simulation ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Simulation Results

This paper presents the calculation model of capacitive RF-MEMS switch for the isolation and insertion loss, and then adopts CST software to simulate microwave performances. The simulation results show that return loss can reach-21.5dB and isolation can reach-0.26dB when the distance between contacting metal and dielectric layer adopts 2ڌ̏̽, 6×?103ڌ̏̽2 of contacting area and 20ڌ̏̽ of groove depth.

scholarly journals High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Tejinder Singh ◽  
Navjot Khaira
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
High Resistivity ◽  
Capacitive Switches ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
X Band ◽  
High Resistivity Silicon ◽  
Novel Design ◽  
Better Than

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

scholarly journals Design and Analysis of Shunt Configuration-Based RF MEMS Switch

2019 ◽  
Vol 8 (9) ◽  
pp. 2034-2039
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Beam Width ◽  
Switching Speed ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
State Capacitance

In this paper a shunt type RF MEMS switch design and analysis for tunable applications is presented. Switch works based on the electrostatic actuation principle. Theoretical calculated Switch parameters are compared with the electromechanical and electromagnetic simulation results. The effect of various materials like conductor and dielectrics & parameters like airgap, beam width on the electromechanical parameters of the switch is analyzed to get low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and isolation loss. The switch up and down state capacitance are 40.9fF and 4.45pF respectively. Down to up state capacitance ratio of this switch is 108.69. The designed switch has an actuation voltage of 32V. RF performance is simulated from 1-10GHz. In ON state switch has return loss of -35dB, insertion loss of -0.1dB. In the OFF-state switch has return loss of -1dB and an isolation loss of -11dB.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

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