Compact 2X2 Optical Switch Using Silicon Photonics Technology for Optical Beam Forming Network

We report the experimental demonstration of a 2×2 electro-optical switch in silicon-on-insulator. By controlling electro-optical phase shifter, light from any input waveguide can be directed to any output waveguide. Furthermore, the proposed optical switch can be expanded to be 1×N and N×N optical switch for optical beam forming network. The switch is fabricated by CMOS technology. In experiment, full 2×2 switching functionality is demonstrated at wavelength of 1.55 μm, with an average crosstalk of-14.6 dB and compact size of 300X100 um2.

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2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

10.20944/preprints201901.0148.v1 ◽

2019 ◽

Author(s):

Boris Niraula ◽

Conrad Rizal

Keyword(s):

Power Consumption ◽

High Speed ◽

Optical Switching ◽

Phase Shifter ◽

Optical Switch ◽

Cmos Technology ◽

Phase Shifters ◽

Silicon On Insulator ◽

Coupling Loss ◽

Compact Size

This paper reports 2 × 4 hybrid Mach-zehnder interferometer (MZI) - multi-mode interferometers (MMI) based compact thermo-optical switch consisting of slab waveguides on silicon-on-insulator, SOI, platform. The device consists of two identical MMIs, each of 6 μm wide and 140 μm long connected with two phase shifters MMIs each with 2 μm wide and 8 μm long and linear tappers each 4 μm long, connected at both ends of the MMIs to minimize the power coupling loss. The loss for linear taper is found to be below 0.02dB. The footprint of the whole device is six 6 μm × 324 μm. This structure is based on unique multimode region shape, which leads optical switch to have less coupling loss and reduced cross-talk. The average thermo-optical switching power consumption is 1.4 mW, the excess losses are 0.8 dB, and the imbalances are 0.1 dB. Aluminum is used as a heating pad, and a trench is created around this pad to prevent from spreading of heat and reduce power loss almost by a factor of 2 to the adjacent phase shifter. Our new heating method has advantages of compact size and ease of fabrication with the current CMOS technology.

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Design of a 2 × 4 Hybrid MMI-MZI Configuration with MMI Phase-shifters

10.20944/preprints201904.0242.v1 ◽

2019 ◽

Author(s):

Boris B. Niraula ◽

Conrad Rizal

Keyword(s):

Power Consumption ◽

Optical Switching ◽

Optical Switch ◽

Cmos Technology ◽

Phase Shifters ◽

Silicon On Insulator ◽

Excess Loss ◽

Power Coupling ◽

Compact Size ◽

Power Splitters

This paper reports design of a 2 × 4 hybrid multimode interferometer-Mach-zehnder interferometer (MMI-MZI) configuration and compact thermo-optical switch consisting of slab waveguides on the silicon-on-insulator (SOI), platform. The device consisted of two identical MMIs as power splitters and couplers that are connected with two identical MMI-based phase shifters, and linear tapers at both ends of the MMIs to minimize the power coupling loss. A thin Al pad is used as a heating element, and a trench is created around this pad to prevent heat from spreading and to minimize loss. The calculated average thermo-optical switching power consumption, excess loss, and power imbalance are 1.4 mW, 0.9 dB, and 0.1 dB, respectively. The overall footprint of the device is 6 × 304 μm2. The new heating method has advantages of compact size, ease of fabrication on SOI platform with the current CMOS technology, and offers low excess loss and power consumption as demanded by devices based on SOI technology. The device can act as two independent optical switches in one structure.

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2x2 Optical Switch Based on Silicon-on-Insulator Microring Resonator

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.531 ◽

2011 ◽

Vol 378-379 ◽

pp. 531-534

Author(s):

B. Mardiana ◽

Hanim Abdul Razak ◽

H. Hazura ◽

S. Shaari ◽

P. Susthitha Menon ◽

...

Keyword(s):

Optical Switch ◽

Free Spectral Range ◽

Fdtd Method ◽

Single Mode ◽

Microring Resonator ◽

Silicon On Insulator ◽

Electric Signal ◽

Compact Size ◽

Near Future ◽

Difference Time

In near future, silicon-on-insulator (SOI) microring resonator are expected to be basic components for wavelength filtering and switching due to their compact size and wide free spectral range (FSR). In this paper, a 2X2 optical switch by using active microring resonator is proposed. The switch is consists of second order serially cascaded microring coupled to a pair of waveguide. The ON/OFF state of the design is control by electric signal which will vary the refractive index. The device is design to operate at 1.55µm wavelength. With a 500nm x 200nm rib dimensions, the design is proven to have single mode behaviour. Finite-Difference Time-Domain (FDTD) method simulation by RSOFT software is use to characterize the device performance. The results show that the 2X2 optical switch proposed can be an efficient device to be functioning in WDM application.

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Design of a 2 × 4 Hybrid MMI-MZI Configuration with MMI Phase-Shifters

Materials ◽

10.3390/ma12091555 ◽

2019 ◽

Vol 12 (9) ◽

pp. 1555 ◽

Cited By ~ 1

Author(s):

Boris B. Niraula ◽

Conrad Rizal

Keyword(s):

Power Consumption ◽

Optical Switching ◽

Cmos Technology ◽

Optical Switches ◽

Phase Shifters ◽

Silicon On Insulator ◽

Excess Loss ◽

Power Coupling ◽

Compact Size ◽

Power Splitters

This paper reports design of a 2 × 4 hybrid multimode interferometer-Mach-zehnder interferometer (MMI-MZI) configuration consiting of compact thermo-optical switches on the silicon-on-insulator (SOI) platform. The device consists of two identical MMI slab waveguides as power splitters and couplers that are connected with two identical MMI-based phase shifters, and linear tapers at both ends of the MMIs to minimize the power coupling loss. A thin Al pad is used as a heating element and a trench is created around this pad to prevent heat from spreading, and to minimize loss. The calculated average thermo-optical switching power consumption, excess loss, and power imbalance are 1.4 mW, 0.9 dB, and 0.1 dB, respectively. The overall footprint of the device is 6 × 304 μ m 2 . The new heating method has advantages of compact size, ease of fabrication on SOI platform with the current CMOS technology, and offers low excess loss and power consumption as demanded by devices based on SOI technology. The device can act as two independent optical switches in one device.

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Introduction of a Novel Sample Preparation Technique for the Failure Analysis of Silicon Integrated Photonics Modules

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0508 ◽

2019 ◽

Author(s):

Pradip Sairam Pichumani ◽

Fauzia Khatkhatay

Keyword(s):

Sample Preparation ◽

Failure Analysis ◽

Silicon Photonics ◽

Cmos Technology ◽

Single Step ◽

Oxide Semiconductor ◽

Disruptive Technology ◽

Preparation Technique ◽

Test Vehicle ◽

Sample Preparation Technique

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.

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Performance Enhanced 6-bit Phase Shifter in 65-nm CMOS Technology

2020 IEEE Asia-Pacific Microwave Conference (APMC) ◽

10.1109/apmc47863.2020.9331686 ◽

2020 ◽

Author(s):

R Arthi. ◽

S. Christopher ◽

K. Selvajyothi

Keyword(s):

Phase Shifter ◽

Cmos Technology

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A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078716000167 ◽

2016 ◽

Vol 8 (3) ◽

pp. 399-404 ◽

Cited By ~ 1

Author(s):

Boris Moret ◽

Nathalie Deltimple ◽

Eric Kerhervé ◽

Baudouin Martineau ◽

Didier Belot

Keyword(s):

Phase Shift ◽

Phase Shifter ◽

Complementary Metal Oxide Semiconductor ◽

Active Phase ◽

Cmos Technology ◽

Oxide Semiconductor ◽

60 Ghz ◽

Semiconductor Technology ◽

Vector Modulator ◽

Active Phase Shifter

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

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Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac465b ◽

2021 ◽

Author(s):

Yutaka Makihara ◽

Moataz Eissa ◽

Tomohiro AMEMIYA ◽

Nobuhiko Nishiyama

Keyword(s):

Phase Shift ◽

Coupling Coefficient ◽

Integrated Circuit ◽

Silicon Photonics ◽

Silicon On Insulator ◽

Zehnder Interferometer ◽

Directional Couplers ◽

Photonic Integrated Circuit ◽

Active Elements ◽

Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

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