Optimization of Reactive Sputtering Technology for Hard Coatings Deposition

2014 ◽  
Vol 657 ◽  
pp. 246-250 ◽  
Author(s):  
Gabriela Strnad ◽  
Laszlo Jakab-Farkas ◽  
Sandor Papp ◽  
Albert Zsombor Fekete ◽  
Dominic Biro ◽  
...  

The paper presents the research work carried out in order to optimize the technology and reactive magnetron sputtering system used for the deposition of hard, multielemental, multiphase coatings. On the basis of a model of dynamic pressure developed and validated by us, regulatory structures for dynamic pressure inside the deposition chamber were designed and implemented. By using this optimization, extensive experiments involving nanostructured (Ti, Al, Si)N coatings, with a thickness of approx. 2 μm, were carried out. Using TEM microscopy, SAED and Vickers microhardness characterizations the results of deposition system optimization on the microstructure and microhardness of thin films were investigated.

2013 ◽  
Vol 802 ◽  
pp. 242-246 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Yossawat Rayanasukha ◽  
Darinee Phromyothin ◽  
...  

Tantalum oxide (Ta2O5) thin films, 100 nm thick were deposited by D.C. reactive magnetron sputtering system at different operated pressure on unheated p-type silicon (100) wafer and 304 stainless substrates. Their crystalline structure, film surface morphology and optical properties, as well as anticorrosive behavior, were investigated. The structure and morphology of films were characterized by grazing-incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The optical properties were determined by spectroscopic ellipsometry (SE). The corrosion performances of the films were investigated through potentiostat and immersion tests in 1 M NaCl solutions. The results showed that as-deposited Ta2O5 thin films were amorphous. The refractive index varied from 2.06 to 2.17 (at 550 nm) with increasing operated pressure. The corrosion rate of Ta2O5 thin film improves as the operated pressure decreases. The Ta2O5 thin films deposited at 3 mTorr operated pressure could be exhibited high performance anticorrosive behavior.


1991 ◽  
Vol 35 (B) ◽  
pp. 819-827 ◽  
Author(s):  
M. Charbonnier ◽  
M. Romand ◽  
A. Roche ◽  
J.P. Terrat

AbstractChromium nitride hard coatings have been prepared by a plasma process by varying nitrogen partial pressure. The crystallographic structure of these samples has been investigated by XRD and their chemical composition and stoichiometry by Low Energy Electron Induced x-ray Spectrometry (LEEIXS).


Author(s):  
J. L. Estrada-Martínez ◽  
J. A. Melo-Banda ◽  
U. Páramo-García ◽  
J. Reséndiz-Muñoz ◽  
J. L. Fernández-Muñoz ◽  
...  

Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature- applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB: By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RF-magnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.


2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>


Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.


Sign in / Sign up

Export Citation Format

Share Document