Design and Implementation of Colloidal Quantum Dot Field-Effect Transistors

2014 ◽  
Vol 668-669 ◽  
pp. 818-821
Author(s):  
Hai Yan Wang ◽  
Ya Ting Zhang ◽  
Xiao Xian Song ◽  
Lu Fan Jin ◽  
Hai Tao Dai ◽  
...  

With the breakthrough of mobility in quantum dot electric field transistors (Q-EFTs), the potential application in these functional devices has revealed and been paid more attentions, due to flexibility in design, low cost, facility for processing and large area. One of the most important applications of FETs is the photoconductive detector. However, these functional FETs have less been reported. In this work, colloidal PbS Q-FETs were successfully fabricated by reasonable structure design and layer-by-layer depositon technique PbS quantum-dots. The bipolar property was demonstrated by the output and transfer characteristics, as devices work in I and III quadrants simultaneously. The mobilities of electron and hole are 0.16 cm2/(V⋅s) and 0.28 cm2/(V⋅s), respectively. Q-FETs work as photoconductive detectors at both positive and negative gate bias voltages. Under constant gate bias, photocurrent increase exponentially with the intensity of light. The responding region consisted with the absorption range of PbS quantum dots. A linearity was found in drain voltage and incidence of laser power, the ratio was attributing to 0.0019 (μW⋅V)-1.

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.


RSC Advances ◽  
2015 ◽  
Vol 5 (84) ◽  
pp. 68579-68586 ◽  
Author(s):  
Lin Yuan ◽  
Robert Patterson ◽  
Wenkai Cao ◽  
Zewen Zhang ◽  
Zhilong Zhang ◽  
...  

High resolution of EDX image shows the bromine located on same position of PbS quantum dot.


2017 ◽  
Vol 5 (45) ◽  
pp. 23960-23966 ◽  
Author(s):  
Kunyuan Lu ◽  
Yongjie Wang ◽  
Jianyu Yuan ◽  
Zequn Cui ◽  
Guozheng Shi ◽  
...  

New-generation solar cells based on colloidal lead chalcogenide (PbX) quantum dots (CQDs) are promising low-cost solution-processed photovoltaics.


2014 ◽  
Vol 118 (10) ◽  
pp. 5142-5149 ◽  
Author(s):  
Askhat N. Jumabekov ◽  
Felix Deschler ◽  
Daniel Böhm ◽  
Laurence M. Peter ◽  
Jochen Feldmann ◽  
...  

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040017
Author(s):  
F. Jain ◽  
R. H. Gudlavalleti ◽  
R. Mays ◽  
B. Saman ◽  
J. Chandy ◽  
...  

Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-consistent solution of the Schrodinger and Poisson’s equations, is shown to predict I-V characteristics up to milli-Kelvin temperatures. Physics-based equivalent circuit models do not work below 53°K. However, they may be improved by adapting parameters derived from quantum simulations. Low-temperature operation improves noise margins in QDC- and SWS-FET based multi-bit logic, which dissipates lower power and comprise of fewer device count. In addition, the role of self-assembled cladded QDs with transfer gate provides a novel pathway to implement qubit processing.


2019 ◽  
Vol 16 (2) ◽  
pp. 436-440
Author(s):  
Lekshmi Gangadhar ◽  
Anusha Kannan ◽  
P. K. Praseetha

The solar energy is one of the potential renewable green energy source considering the availability of sunlight in abundance and the need for clean and renewable source of energy. Quantum dots are semiconductor nanocrystals having considerable interest in photovoltaic research areas. Cadmium sulfide-sensitized solar cells are synthesized by Chemical bath deposition and titanium nanowires were fabricated by hydrothermal method. The synthesized CdS quantum dots are sensitized to nanoporous TiO2 films to form quantum dots-sensitized solar cell applications. The introduction of TNWs enables the electrolyte to penetrate easily inside the film which increases the interfacial contact between the nanowires, the quantum dots and the electrolyte results in improvement in efficiency of solar cell. The goal of our research is to understand the fundamental physics and performance of quantum dot-sensitized solar cells with improved photoconversion efficiency at the low cost based on selection of TiO2 nanostructures, sensitizers and electrodes through an integrated experimental and modeling study.


2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840005
Author(s):  
Jun Kondo ◽  
Pial Mirdha ◽  
Barath Parthasarathy ◽  
Pik-Yiu Chan ◽  
Bander Saman ◽  
...  

Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3361
Author(s):  
Kyung-Tae Kim ◽  
Keon Woo Lee ◽  
Sanghee Moon ◽  
Joon Bee Park ◽  
Chan-Yong Park ◽  
...  

Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a cost-effective and straightforward process capable of minimizing polymers bound to s-SWCNT surfaces acting as an interfering element for the charge carrier transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, we introduced conformal dielectric configuration for s-SWCNT FETs, which are explored by a carefully designed wide array of electrical and chemical characterizations with finite-element analysis (FEA) computer simulation. For more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel dielectrics, demonstrating field-effect mobility of ~8.19 cm2/V⋅s and on/off current ratio of ~105 along with negligible hysteresis.


2016 ◽  
Vol 4 (42) ◽  
pp. 16553-16561 ◽  
Author(s):  
Junwei Yang ◽  
Xinhua Zhong

A low-temperature aqueous route was adopted to fabricate low-cost CdTe based quantum dot sensitized solar cells with a best performance of 7.24%.


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