Thin-Gate-Oxide Breakdown and CPU Failure-Rate Estimation

2007 ◽  
Vol 7 (1) ◽  
pp. 74-83 ◽  
Author(s):  
Yung-Huei Lee ◽  
Neal R. Mielke ◽  
William McMahon ◽  
Yin-Lung Ryan Lu ◽  
Sangwoo Pae
Keyword(s):  
Failure Rate ◽  
Gate Oxide ◽  
Oxide Breakdown ◽  
Rate Estimation ◽  
Thin Gate Oxide

Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses

2010 ◽  
Vol 57 (9) ◽  
pp. 2296-2305 ◽  
Author(s):  
David F. Ellis ◽  
Yuanzhong Zhou ◽  
Javier A. Salcedo ◽  
Jean-Jacques Hajjar ◽  
Juin J. Liou
Keyword(s):  
Gate Oxide ◽  
Oxide Breakdown ◽  
Thin Gate Oxide

Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1286-L1289 ◽  
Author(s):  
Hyun-Soo Kim ◽  
Ki-Sang Lee ◽  
Bo-Young Lee ◽  
Hak-Do Yoo ◽  
Seung-Ho Pyi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Stacking Fault ◽  
Oxide Breakdown ◽  
Thin Gate Oxide ◽  
Oxygen Precipitates

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

2014 ◽  
Vol 696 ◽  
pp. 57-61
Author(s):  
Ling Sun ◽  
Yu Wei Zhou ◽  
Hong Wang ◽  
Xiang Dong Luo ◽  
Jia Yuan Guo
Keyword(s):  
Gate Oxide ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Oxide Breakdown ◽  
Simulation Based ◽  
Fundamental Understanding ◽  
Thin Gate Oxide ◽  
The Relationship

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown

2006 ◽  
Author(s):  
Yung-huei Lee ◽  
Neal Mielke ◽  
Marty Agostinelli ◽  
Sukirti Gupta ◽  
Ryan Lu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Product Failure ◽  
Oxide Breakdown ◽  
Thin Gate Oxide

Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

2002 ◽  
Vol 12 (3) ◽  
pp. 57-60 ◽  
Author(s):  
B. Cretu ◽  
F. Balestra ◽  
G. Ghibaudo ◽  
G. Guégan
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Thin Gate Oxide

A Study of Pad Contamination Defect and Removal

2008 ◽  
Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Oxide ◽  
Action Plans ◽  
Preventive Action ◽  
Oxide Breakdown ◽  
Reliability Level ◽  
The Future ◽  
Dry Etch ◽  
Removal Technique

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.

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