Field dependent critical trap density for thin gate oxide breakdown

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

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Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799339 ◽

2003 ◽

Cited By ~ 33

Author(s):

R. Degraeve ◽

N. Pangon ◽

B. Kaczer ◽

T. Nigam ◽

G. Groeseneken ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Breakdown ◽

Oxide Reliability ◽

Thin Gate Oxide

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Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996611 ◽

2003 ◽

Cited By ~ 10

Author(s):

E. Wu ◽

W. Lai ◽

M. Khare ◽

J. Sune ◽

L.-K. Han ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Breakdown ◽

Thin Gate Oxide

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Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251187 ◽

2006 ◽

Cited By ~ 28

Author(s):

Yung-huei Lee ◽

Neal Mielke ◽

Marty Agostinelli ◽

Sukirti Gupta ◽

Ryan Lu ◽

...

Keyword(s):

Gate Oxide ◽

Product Failure ◽

Oxide Breakdown ◽

Thin Gate Oxide

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Roles of Primary Hot Hole and FN Electron Fluences in Gate Oxide Breakdown

MRS Proceedings ◽

10.1557/proc-592-99 ◽

1999 ◽

Vol 592 ◽

Author(s):

M. F. Li ◽

Y. D. He ◽

S. G. Ma ◽

Byung Jin Cho ◽

K. F. Lo

Keyword(s):

Gate Oxide ◽

Critical Value ◽

Trap Density ◽

Hole Injection ◽

Oxide Breakdown ◽

Breakdown Mechanism ◽

Oxide Reliability ◽

Device Operation ◽

Breakdown Model ◽

Good Agreement

ABSTRACTIn this work, we report the link between the primary hot hole and Fowler Nordheim (FN) electron injections in oxide breakdown mechanism. A simple breakdown model is established. The experimental method is carefully designed to measure the primary hot hole fluence and FN electron fluence separately and accurately. The calculation based on our model is in very good agreement with our experiments. Oxide breakdown is stimulated by a combined effect when the sum of the trap density Dpri activated by primary hot hole injection and the trap density Dn activated by FN electron injection reaches a critical value Dcri. The hole is two orders of magnitude more effective than FN electron in causing breakdown. Since primary hot hole injection may occurs under many realistic device operation in the circuit, existing oxide lifetime projected from conventional TDDB measurement by only applying FN stress is overestimated in many cases. The model demonstrated in this work lays the groundwork in approaching a more appropriate way for predicting the oxide reliability and lifetime.

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