Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

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Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799339 ◽

2003 ◽

Cited By ~ 33

Author(s):

R. Degraeve ◽

N. Pangon ◽

B. Kaczer ◽

T. Nigam ◽

G. Groeseneken ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Breakdown ◽

Oxide Reliability ◽

Thin Gate Oxide

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Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996611 ◽

2003 ◽

Cited By ~ 10

Author(s):

E. Wu ◽

W. Lai ◽

M. Khare ◽

J. Sune ◽

L.-K. Han ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Breakdown ◽

Thin Gate Oxide

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Field dependent critical trap density for thin gate oxide breakdown

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761592 ◽

2003 ◽

Cited By ~ 8

Author(s):

K.P. Cheung ◽

C.T. Liu ◽

C.-P. Chang ◽

J.I. Colonell ◽

W.Y.-C. Lai ◽

...

Keyword(s):

Gate Oxide ◽

Trap Density ◽

Oxide Breakdown ◽

Field Dependent ◽

Thin Gate Oxide

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Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251187 ◽

2006 ◽

Cited By ~ 28

Author(s):

Yung-huei Lee ◽

Neal Mielke ◽

Marty Agostinelli ◽

Sukirti Gupta ◽

Ryan Lu ◽

...

Keyword(s):

Gate Oxide ◽

Product Failure ◽

Oxide Breakdown ◽

Thin Gate Oxide

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Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.168 ◽

2018 ◽

Vol 924 ◽

pp. 168-171

Author(s):

Kai Li Mao ◽

Ying Min Wang ◽

Bin Li ◽

Gao Yang Zhao

Keyword(s):

Growth Process ◽

Gate Oxide ◽

Structural Features ◽

Confocal Microscope ◽

Stacking Fault ◽

Epitaxial Layers ◽

Leakage Currents ◽

Oxide Breakdown ◽

Origin Analysis

The obtuse triangular defects would result in higher leakage currents and the preferential gate oxide breakdown of SiC devices. The formation and structural features of obtuse triangular defects on the 4° off 4H-SiC epilayers were investigated by confocal microscope and photoluminescence image. Two structrures of obtuse triangular defects were found. By optimizing the growth process, obtuse triangular defect free epitaxial layers were abtained on SiC substrate with serveral stacking fault. The number of triangular SFs defects was less than 0.5/cm2.

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