Film Thickness-Dependent Microstructures and Dielectric Properties of Pb(Zr,Ti)O3 Thick Films by Sol-Gel Processing

2011 ◽  
Vol 80-81 ◽  
pp. 688-692 ◽  
Author(s):  
Ya Ting Zhang ◽  
Xiu Jian Chou ◽  
Wen Ping Geng ◽  
Ying Tian ◽  
Ji Jun Xiong ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Film Thickness ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Sol Gel Process ◽  
Gel Processing

Lead zirconate titanate thick films with thickness of 1-3μm have been prepared by a sol-gel process. Influence of film thickness on microstructures and dielectric properties of the films were investigated. The film thickness dependent of microstructures was studied by XRD and Raman spectrum. The PZT films were dense and possessed preferential crystal orientation. Ferroelectricity and dielectric properties were confirmed by P–E hysteresis loops and C-E measurements. The dielectric constant and dielectric loss of the film with thickness of 3.045μm were 2000 and 0.055, respectively. The decrease of the coercive field and the increase of the remanent polarization with the increase in thickness were observed. As film thickness was increasing, PZT thick films had higher (110)-preferred growth orientation and excellent dielectric and ferroelectric properties.

Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

scholarly journals Ferroelectric and Dielectric Properties of ZnFe2O4-Pb(ZrTi)O3Multiferroic Nanocomposites

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shrabanee Sen ◽  
Sk. Md. Mursalin ◽  
M. Maharajan
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Nanosized Powders ◽  
X Ray ◽  
Magnetoelectric Composites ◽  
Gel Technique

Magnetoelectric composites of zinc ferrite and soft lead zirconate titanate (PZT) having formula 0.5 ZnFe2O4-0.5 PZT were synthesized by sol-gel technique. X-ray diffraction analysis was carried out to confirm the coexistence of individual phase. TEM micrographs were taken to confirm the formation of nanosized powders and SEM micrographs were taken to study the morphology of the sintered pellets. Dielectric and P-E hysteresis loops were recorded, respectively, to confirm the ferroelectric properties of the composites.

Ferroelectric Lead Zirconate Titanate Nanocomposites for Thick-Film Applications

1996 ◽  
Vol 457 ◽  
Author(s):  
Kui Yao ◽  
Weiguang Zhu ◽  
Xi Yao
Keyword(s):  
Lead Zirconate Titanate ◽  
Glass Ceramic ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Average Particle Size ◽  
Lead Zirconate ◽  
Average Particle ◽  
Zirconate Titanate ◽  
Metal Organic

ABSTRACTIn this paper, we report our experimental results of lead zirconate titanate (PZT) thick-films prepared from the sol-gel derived nanocomposites. Transparent Pb-Zr-Ti-B-Si gels were synthesized from various metal organic precursors. PZT grains with the size of one hundred nanometers were homogeneously grown from the gels in the annealing process. Then PZT thick-films were prepared using the gel-derived glass-ceramic powders with average particle size below 300 nm. Surficial morphology, dielectric and ferroelectric properties of the films were studied. The characteristics of such films are attributed to the nano-sized composite structure of the gel-derived PZT glass-ceramic precursors.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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