Comparative Study of the Characteristics in Strained AlxInyGa(1-x-y)N/InGaN and AlxInyGa(1-x-y)N/GaN Heterostructures
2016 ◽
Vol 860
◽
pp. 117-122
Keyword(s):
The paper emphasized on different characteristics AlInGaN/InGaN and AlInGaN/GaN heterostructures for enhancing the device performance. Effect of changing mole fraction in bandgap, strain, polarization have been investigated. Amount of sheet charge density created on the heterointerfaces of AlInGaN /InGaN and AlInGaN/GaN heterostructures have been calculated. It has been observed that with the increment of Indium mole fraction and the decrement of Aluminium mole fraction, the total polarization increases hence larger 2DEG and sheet charge density is created.
2010 ◽
Vol 67
(1)
◽
pp. 63-78
◽
2016 ◽
Vol 37
(4)
◽
pp. 044003
◽
2010 ◽
Vol 24
(24)
◽
pp. 4851-4859
2011 ◽
Vol 233-235
◽
pp. 1597-1602
1986 ◽
Vol 33
(11)
◽
pp. 1860-1860
◽
Keyword(s):
Keyword(s):