Research on the Characterization and the Properties of SiOx Coating on Plastic Film

2010 ◽  
Vol 174 ◽  
pp. 486-489
Author(s):  
Gai Mei Zhang ◽  
Qiang Chen ◽  
Cun Fu He ◽  
Hui Qin Zhu ◽  
Yu Ling Li
Keyword(s):  
Contact Angle ◽  
Atomic Force Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plastic Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Biaxially Oriented Polypropylene ◽  
Oriented Polypropylene ◽  
Pet Film

The nano-thickness SiOx deposited on polyethylene terephthalate (PET) film and biaxially oriented polypropylene (BOPP) were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a radio frequency (13.56 MHz) glow discharge. The nano-coatings were characterized by using Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and ultrasonic atomic force microscopy (UAFM). With AFM and UAFM, the topography and ultrasonic amplitude images were obtained. In particular, the UAFM images reveal the subsurface defects in the coating. The tensile property, contact angle and OTR of the PET present and absent of the SiOx coating were investigated experimentally respectively. The results can show that the SiOx coating can improved the barrier and the tensile strength.

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Morphology of twinned diamond particles

1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Surface Normal ◽  
Normal Algorithm ◽  
Diamond Particles

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.

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