Structure, Optical, Temperature Dependent Electrical Properties of P-Type Conduction in N–Al Codoped Zn1-XMgXO Films by Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 217-218 ◽  
pp. 1708-1715
Author(s):  
Xia Zhang ◽  
Qiu Hui Liao ◽  
Hong Chen ◽  
Zhi Yan ◽  
Zhi Shui Yu
Keyword(s):  
Hall Effect ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Temperature Dependent ◽  
Sem Images ◽  
Ultrasonic Spray ◽  
P Type ◽  
Type Conduction

Four series of thin films have been deposited as the precursory sources of Zn(CH3COO)2, Mg(CH3COO)2, NH4CH3COO and AlCl3 aqueous solutions using ultrasonic spray pyrolysis (USP) method. The crystalline structure, morphology images, electrical, optical properties of the films are characterized by x-ray diffraction (XRD), field emission-scan electron image (FE-SEM), Hall-effect measurement and photoluminescence (PL). From the XRD patterns and SEM images, we can see that all the films present good crystallinity and surface uniformity. Hall-effect measurement results indicate that ZnO is n-type, while N-Al codoped ZnO and N-Al codoped Zn1-xMgxO exhibit p-type conduction. Temperature dependent of electrical measurement is carried out from 300K to 500K, then the conductive mechanism and carriers scattering are analysed. Furthermore, the photoluminescence peak of Zn1-xMgxO is tuned into shorten wavelength than pure ZnO (λ＝379－352＝27nm), and also the same phenomenon of the p-type Zn1-xMgxO film exhibits blue-shifted behavior from 378nm to 356nm compared with p-type ZnO film (λ＝378－356＝21nm). In other word, the p-type Zn1-xMgxO film shifts to a shorter wavelength of 356 nm while maintaining excellent electrical performances.

p-type conduction in wide-gap Zn1−xMgxO films grown by ultrasonic spray pyrolysis

2005 ◽  
Vol 87 (9) ◽  
pp. 092101 ◽  
Author(s):  
X. Zhang ◽  
X. M. Li ◽  
T. L. Chen ◽  
C. Y. Zhang ◽  
W. D. Yu
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray ◽  
Wide Gap ◽  
P Type ◽  
Type Conduction

Synthesis and temperature dependent photoluminescence of Zn1−x Mg x O films grown by ultrasonic spray pyrolysis

2007 ◽  
Vol 42 (20) ◽  
pp. 8461-8464 ◽  
Author(s):  
Jiming Bian ◽  
Yingmin Luo ◽  
Jingchang Sun ◽  
Hongwei Liang ◽  
Weifeng Liu ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Temperature Dependent ◽  
Ultrasonic Spray ◽  
Temperature Dependent Photoluminescence

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
P Type

Study on anomalous high p-type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

2007 ◽  
Vol 90 (6) ◽  
pp. 062118 ◽  
Author(s):  
Jun-Liang Zhao ◽  
Xiao-Min Li ◽  
André Krtschil ◽  
Alois Krost ◽  
Wei-Dong Yu ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Silicon Substrate ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Type Conductivity ◽  
Ultrasonic Spray ◽  
P Type

Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang
Keyword(s):  
Spray Pyrolysis ◽  
Deep Level ◽  
Hole Concentration ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Near Band Edge ◽  
Dense Microstructure ◽  
Ultrasonic Spray ◽  
High Hole Concentration ◽  
P Type

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

ULTRASONIC SPRAY-ASSISTED CVD GROWTH OF HIGHLY TRANSPARENT AND CONDUCTIVE ALUMINUM-DOPED ZnO

2020 ◽  
Vol 27 (12) ◽  
pp. 2050024
Author(s):  
Y. KHAAISSA ◽  
K. FATHI ◽  
A. TALBI ◽  
K. NOUNEH ◽  
K. EL MABROUK ◽  
...  
Keyword(s):  
Hall Effect ◽  
Film Surface ◽  
Precursor Solution ◽  
Hall Effect Measurement ◽  
Optical Measurements ◽  
Effect Measurement ◽  
Visible Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray

Zinc oxide [Formula: see text], undoped and Al-doped thin films have been synthesized by the ultrasonic spray-assisted chemical vapor deposition (USCVD) system. The films were deposited on glass substrates. The precursor solution was prepared dissolving zinc chloride in distilled water. First, the precursor concentrations were investigated and optimized before studying [Formula: see text] doped, after we have studied the [Formula: see text]-doped influence on [Formula: see text] films especially optical and electrical properties for use as a transparent conductive oxide (TCO) in solar cell electrodes. The characterizations have been carried out using X-ray diffraction technique, UV-vis spectrophotometry, Hall Effect measurement (ECOPIA), atomic force microscopy (AFM, VEECO Dimension [Formula: see text] and scanning electron microscopy (SEM). X-ray diffraction (XRD) results showed that [Formula: see text] and [Formula: see text]-doped [Formula: see text] films were crystallized in the hexagonal wurtzite structure with [Formula: see text] orientation. Optical measurements have shown that all films exhibit, along the visible range, high transmittance and that optical band gap depends strongly to [Formula: see text]-doped concentration. Hall-effect measurement indicates that the highest carrier concentration [Formula: see text] and the lowest resistivity [Formula: see text] are obtained for the [Formula: see text] AZO sample. The SEM shows that the microstructures of [Formula: see text] and [Formula: see text] are homogeneous and the AFM images prove their microcrystallinity with grains orthogonal to the film surface.

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