ULTRASONIC SPRAY-ASSISTED CVD GROWTH OF HIGHLY TRANSPARENT AND CONDUCTIVE ALUMINUM-DOPED ZnO

2020 ◽  
Vol 27 (12) ◽  
pp. 2050024
Author(s):  
Y. KHAAISSA ◽  
K. FATHI ◽  
A. TALBI ◽  
K. NOUNEH ◽  
K. EL MABROUK ◽  
...  
Keyword(s):  
Hall Effect ◽  
Film Surface ◽  
Precursor Solution ◽  
Hall Effect Measurement ◽  
Optical Measurements ◽  
Effect Measurement ◽  
Visible Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray

Zinc oxide [Formula: see text], undoped and Al-doped thin films have been synthesized by the ultrasonic spray-assisted chemical vapor deposition (USCVD) system. The films were deposited on glass substrates. The precursor solution was prepared dissolving zinc chloride in distilled water. First, the precursor concentrations were investigated and optimized before studying [Formula: see text] doped, after we have studied the [Formula: see text]-doped influence on [Formula: see text] films especially optical and electrical properties for use as a transparent conductive oxide (TCO) in solar cell electrodes. The characterizations have been carried out using X-ray diffraction technique, UV-vis spectrophotometry, Hall Effect measurement (ECOPIA), atomic force microscopy (AFM, VEECO Dimension [Formula: see text] and scanning electron microscopy (SEM). X-ray diffraction (XRD) results showed that [Formula: see text] and [Formula: see text]-doped [Formula: see text] films were crystallized in the hexagonal wurtzite structure with [Formula: see text] orientation. Optical measurements have shown that all films exhibit, along the visible range, high transmittance and that optical band gap depends strongly to [Formula: see text]-doped concentration. Hall-effect measurement indicates that the highest carrier concentration [Formula: see text] and the lowest resistivity [Formula: see text] are obtained for the [Formula: see text] AZO sample. The SEM shows that the microstructures of [Formula: see text] and [Formula: see text] are homogeneous and the AFM images prove their microcrystallinity with grains orthogonal to the film surface.

Structure, Optical, Temperature Dependent Electrical Properties of P-Type Conduction in N–Al Codoped Zn1-XMgXO Films by Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 217-218 ◽  
pp. 1708-1715
Author(s):  
Xia Zhang ◽  
Qiu Hui Liao ◽  
Hong Chen ◽  
Zhi Yan ◽  
Zhi Shui Yu
Keyword(s):  
Hall Effect ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Temperature Dependent ◽  
Sem Images ◽  
Ultrasonic Spray ◽  
P Type ◽  
Type Conduction

Four series of thin films have been deposited as the precursory sources of Zn(CH3COO)2, Mg(CH3COO)2, NH4CH3COO and AlCl3 aqueous solutions using ultrasonic spray pyrolysis (USP) method. The crystalline structure, morphology images, electrical, optical properties of the films are characterized by x-ray diffraction (XRD), field emission-scan electron image (FE-SEM), Hall-effect measurement and photoluminescence (PL). From the XRD patterns and SEM images, we can see that all the films present good crystallinity and surface uniformity. Hall-effect measurement results indicate that ZnO is n-type, while N-Al codoped ZnO and N-Al codoped Zn1-xMgxO exhibit p-type conduction. Temperature dependent of electrical measurement is carried out from 300K to 500K, then the conductive mechanism and carriers scattering are analysed. Furthermore, the photoluminescence peak of Zn1-xMgxO is tuned into shorten wavelength than pure ZnO (λ＝379－352＝27nm), and also the same phenomenon of the p-type Zn1-xMgxO film exhibits blue-shifted behavior from 378nm to 356nm compared with p-type ZnO film (λ＝378－356＝21nm). In other word, the p-type Zn1-xMgxO film shifts to a shorter wavelength of 356 nm while maintaining excellent electrical performances.

Low Resistivity-Highly Transparent Zno:Ga Tco's Grown by Laser Ablation

1995 ◽  
Vol 397 ◽  
Author(s):  
J. M. Siqueiros ◽  
J.A. Díaz ◽  
O. Contreras ◽  
G.A. Hirata ◽  
J. McKittrick
Keyword(s):  
Optical Measurements ◽  
Visible Range ◽  
Powder Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Direction ◽  
Diffraction Patterns ◽  
Substrate Temperatures ◽  
Resistance Value ◽  
Combustion Synthesis Technique

ABSTRACTHighly transparent with low electrical resistivity gallium-doped zinc oxide (ZnO:Ga) thin films were prepared on glass by Pulsed Laser Deposition at different substrate temperatures. ZnO:Ga evaporation targets were prepared by pressing and sintering powder materials obtained with a novel combustion synthesis technique.An excellent transmittance of more than 85% in the visible range and a low sheet resistance value as low as 13 Ω/sq. were measured on a 200 nm thickness film grown at Ts=300°C. From optical measurements we observed an increase in the ZnO:Ga bandgap when the substrate temperature is raised from 150°C to 300°C. With this, a remarkable improvement in the blue-green region transmittance is obtained.X-Ray diffraction patterns indicate that the films grow highly oriented in the basal plane direction (c-axis) of the hexagonal ZnO grains.

scholarly journals Microwave Hall effect measurement for materials in the skin depth region

2021 ◽  
Vol 129 (1) ◽  
pp. 015102
Author(s):  
Ryo Ogawa ◽  
Tatsunori Okada ◽  
Hideyuki Takahashi ◽  
Fuyuki Nabeshima ◽  
Atsutaka Maeda
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurement ◽  
Skin Depth ◽  
Effect Measurement

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

scholarly journals The Hall effect measurement in the high resistance In2O3-ZnO polycrystalline films

2009 ◽  
Vol 34 (4) ◽  
pp. 755-757 ◽  
Author(s):  
K. Yamada ◽  
T. Yamaguchi ◽  
N. Kokubo ◽  
B. Shinokazi ◽  
K. Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Resistance ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Polycrystalline Films

scholarly journals Low-temperature hydrothermal synthesis of hierarchical flower-like CuB2O4 superstructures

2020 ◽  
Vol 14 (2) ◽  
pp. 113-118
Author(s):  
Daniel Ursu ◽  
Anamaria Dabici ◽  
Marinela Miclau ◽  
Nicolae Miclau
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Self Assembly ◽  
Hydrothermal Solution ◽  
Optical Measurements ◽  
Oriented Attachment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
One Step

We report for the first time the fabrication of hierarchical ordered superstructure CuB2O4 with flower-like morphology via a one-step, low temperature hydrothermal method. The tetragonal structure of CuB2O4 was determined by X-ray diffraction and high-resolution transmission electron microscopy. Optical measurements attested of the quality of the fabricated CuB2O4 and high temperature X-ray diffraction confirmed its thermal stability up to 600 ?C. The oriented attachment growth and the hierarchical self-assembly of micrometer-sized platelets producing hierarchical superstructures with flower-like morphology are designed by pH of the hydrothermal solution. The excellent band gap, high thermal stability and hierarchical structure of the CuB2O4 are promising for the photovoltaic and photocatalytic applications.

Relationships between molecular structure and physical properties in bent-core mesogens

2006 ◽  
Vol 364 (1847) ◽  
pp. 2657-2679 ◽  
Author(s):  
Wolfgang Weissflog ◽  
H.N Shreenivasa Murthy ◽  
Siegmar Diele ◽  
Gerhard Pelzl
Keyword(s):  
Optical Measurements ◽  
Polar Phase ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
Scanning Calorimetry ◽  
Polarizing Microscopy ◽  
X Ray ◽  
Smectic Phases ◽  
Collective Rotation ◽  
Clear Change

New five-ring bent-core mesogens that possess only ester connecting groups between the aromatic rings and different lateral substituents at the central phenyl ring are presented. The mesophases have been assigned by polarizing microscopy, differential scanning calorimetry, X-ray diffraction and electro-optical measurements. It is shown that the mesophase behaviour depends strongly on the position of the lateral substituents. Compounds, which are derived from 4-cyano-, 4-chloro- and 4,6-dichloro-resorcinol, show polymorphism variants where polar phases (SmAP, SmCP) occur together with nematic and conventional smectic phases, e.g. SmA–SmAP, SmA–SmC S P A –Col ob –SmC S P A , N–SmA–SmCP A , SmA–SmC–SmCP A and SmC–SmCP A . On the basis of the behaviour of two series of materials, the occurrence of different polar-switching mechanisms could be demonstrated. Apart from the usual mechanism by director rotation around the tilt cone, the polar switching can also take place through collective rotation of the molecules around their long axes, which corresponds to a field-induced switching of the layer chirality. A remarkable finding is the polar switching in the crystalline modification of long-chain, bent-core compounds with a methyl group in 2-position, which is accompanied by a clear change of the optical texture and by a relatively high switching polarization (approx. 600 nC cm −2 ). It was found for selected bent-core compounds that, above the transition temperature of a polar to a non-polar phase, the non-polar phase can be transformed to the polar phase by application of an electric field, which was proved for the transitions isotropic–SmCP F , SmA–SmCP F and isotropic–CrII polar.

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