Influence of Substrate Temperature on the Properties of Al-Doped Zinc Oxide Films Prepared by DC Reactive Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 1626-1632 ◽  
Author(s):  
Chang Hu Yang ◽  
Zhong Quan Ma

Transparent and conductive c-axis oriented aluminum-doped zinc oxide (AZO) films have been prepared on glass substrate by dc reactive magnetron sputtering process. The structural, optical and electrical properties of the films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), UV-Visible spectrophotometer and Hall effect measurement system. As the substrate temperature increased, the results showed that grain size of the AZO films gradually increased, the films had a strong c-axis oriented and the crystallization of films became better. The absorption edge first shows a red shift, and then switches to the blue shift with increasing substrate temperature. Optical band gap of AZO films first decreases and then increases with increasing substrate temperature. Resistivity of AZO films decreases with increasing substrate temperature but the rate of decline of resistivity becomes slow after substrate temperature reaches 250 °C. The carriers concentration of AZO films increases with substrate temperature increase.

Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 164297
Author(s):  
Paulina Sawicka-Chudy ◽  
Grzegorz Wisz ◽  
Maciej Sibiński ◽  
Zbigniew Starowicz ◽  
Łukasz Głowa ◽  
...  

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.


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