GaAs/InGaAs Optoelectronic Switch for Triple-Logic Applications

A new GaAs/InGaAs triangular barrier optoelectronic switch combined with tri-state characteristic is fabricated and demonstrated. Two GaAs/InGaAs barriers are employed to provide potential barriers for electron thermionic emission and hole confinement, respectively. Applying a sufficient DC voltage to this device, a double S-shaped negative differential resistance (NDR) phenomenon with nearly equal switching voltage difference is appeared at room temperature. This unique NDR property can be introduced to triple stable regions into the device circuit design. Based on a proper circuit design with suitable load line, the studied device has potential for triple-logic applications.

Download Full-text

Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Active and Passive Electronic Components ◽

10.1080/08827510213497 ◽

2002 ◽

Vol 25 (3) ◽

pp. 245-248

Author(s):

K. F. Yarn

Keyword(s):

Schottky Diode ◽

Negative Differential Resistance ◽

Room Temperature ◽

Thermionic Emission ◽

Differential Resistance ◽

Tunneling Effect ◽

Peak Current Density ◽

Interband Tunneling ◽

First Time ◽

Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Download Full-text

Barrier Limited Transport Mechanisms in Doped μc-Si and μc-Si,C

MRS Proceedings ◽

10.1557/proc-219-377 ◽

1991 ◽

Vol 219 ◽

Cited By ~ 8

Author(s):

G. Lucovsky ◽

C. Wang

Keyword(s):

Room Temperature ◽

Thermionic Emission ◽

Activation Energies ◽

High Conductivity ◽

Band Alignment ◽

Optical Transparency ◽

Transport Mechanisms ◽

Potential Barriers ◽

Alignment Model ◽

Interfacial Potential

ABSTRACTAn analysis of the room-temperature dark conductivities and activation energies for doped μc-Si and μc-Si,C is used to develop a band alignment model which shows that the maximum attainable dark conductivities in these materials are determined by transport through, or over interfacial potential barriers between Si crystallites, c-Si, and the intervening amorphous regions: a-Si:H or a-Si,C:H, respectively. For all levels of doping in μc-Si,C, the transport is limited by thermionic emission over interfacial barriers at the c-Si/a-Si,C:H interface, placing a significant constraint on applications requiring both high optical transparency and high conductivity.

Download Full-text

Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3044021 ◽

2020 ◽

pp. 1-6

Author(s):

Phuong Y. Le ◽

Amanda Gazzana ◽

Billy J. Murdoch ◽

Dougal G. McCulloch ◽

David R. McKenzie ◽

...

Keyword(s):

Amorphous Carbon ◽

Negative Differential Resistance ◽

Room Temperature ◽

Differential Resistance ◽

Electron Trapping

Download Full-text

Materials for Future Quantum Dot-Based Memories

Journal of Nanomaterials ◽

10.1155/2013/215613 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 18

Author(s):

T. Nowozin ◽

D. Bimberg ◽

K. Daqrouq ◽

M. N. Ajour ◽

M. Awedh

Keyword(s):

Cross Sections ◽

Room Temperature ◽

Storage Time ◽

Thermal Emission ◽

Current Status ◽

Strong Electron ◽

Self Organized ◽

Hole Confinement ◽

Storage Times ◽

Capture Cross Sections

The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.

Download Full-text