The Recrystallization Behavior Study of 3%Si Nonoriented Electrical Steel

2012 ◽  
Vol 535-537 ◽  
pp. 678-686
Author(s):  
Wen Min Shi ◽  
Jing Liu ◽  
Chang Yi Li

The recrystallization behavior of the cold rolled 3%Si nonoriented electrical steel at different temperatures is investigated by OIM(Orientation Imaging Microscopy). The results show that the recrystallization process and texture of 3%Si nonoriented electrical steel at different temperatures are determinated by different recrystallization mechanisms. At low annealing temperatures, the formation of recrystallization texture in this specimen can be explained by the mechanism of oriented nucleation theory, but at higher annealing temperatures, the formation of recrystallization texture in this specimen can be explained by the mechanism of oriented growth theory, the twin nucleation mechanism may penetrate the whole recrystallization process.

Author(s):  
B. B. Rath ◽  
H. Hu

The recrystallization process involves the nucleation and growth of strain-free grains and results in grain orientations which are grossly different from those in the deformed matrix. The texture developed during recrystallization has been attributed either to the oriented nucleation or to the oriented growth mechanisms. Although the orientation dependence of the growth rates of recrystallized grains is well recognized, the crystallographic relationships between the grain nuclei and the matrix are not clearly understood.The origin of recrystallization texture has been investigated in detail by examining the orientations and the size of the stable nuclei and their relation to those of the surrounding matrix.


2013 ◽  
Vol 678 ◽  
pp. 193-197
Author(s):  
Periyasamy Gowthaman ◽  
Manickam Saroja ◽  
Muthusamy Venkatachalam ◽  
Jagadeesh Deenathayalan ◽  
N. Muthukumarasamy ◽  
...  

A novel and simple approach is reported to fabricate ZnO nanorods. Zinc acetate dihydrate, ethanol and de-ionized water were used to prepare seed layer. Zinc nitrate and hexamethylenetetramine solution were used for growth of ZnO nanorods. The ZnO nanorods were grown at two different temperatures of 90°C and 120°C and annealed at three different temperatures of 300°C, 400°C and 500°C in air atmosphere. Nanorod growth temperature and annealing temperature are varied and the corresponding changes in structural, morphological and optical properties were reported. The structure, orientation, surface morphology and optical properties of the ZnO nanorods were investigated by XRD, SEM & UV studies. The influence of growth and annealing temperatures on structural and optical properties were reported.


2007 ◽  
Vol 26-28 ◽  
pp. 385-388 ◽  
Author(s):  
Zhi Guo Fan ◽  
Chao Ying Xie

The initial coarse grains of Ti-50.9at%Ni alloy were refined into submicron grains, small than 0.5 um in size, after eight passes Equal Channel Angular Extrusion (ECAE) at 500°C. Optical microscopy and high temperature DSC tests were applied to investigate recrystallization behavior. It is found that the recrystallization start (Rs) and recrystallization peak (Rp) temperatures of Ti-50.9at%Ni specimens processed by eight passes ECAE are lower than that of the samples processed by one pass ECAE. Ti-50.9at%Ni specimens processed by eight passes ECAE with submicron grains are characterized by higher stability and need less energy to finish recrystallization process.


2013 ◽  
Vol 753 ◽  
pp. 257-262 ◽  
Author(s):  
Wei Min Mao ◽  
Ping Yang

The effects of net driving force for migration of high angle grain boundaries were emphasized beside many other factors which could influence the process of texture formation during recrystallization annealing of 95% cold rolled pure aluminum sheets. The net driving force consists basically of stored energy. However, it could be reduced by recovery, boundary drag, solute drag and Zener drag in different extents, in which only boundary drag is mis-orientation dependent. It was indicated that both oriented nucleation and oriented growth have obvious influence on recrystallization texture, and how far they influence the texture depends also on the level of net driving force when the grain growth starts during annealing. Oriented growth, which is induced by the differences in boundary drag of differently oriented grains, and the corresponding texture formation, could be observed easily when the recrystallization proceeds under relative higher solute drag and Zener drag in commercial purity aluminum. The oriented nucleation process prevails during recrystallization of sufficiently recovered high purity aluminum with very low solute drag and Zener drag, after which strong cube texture forms. In this case the oriented growth indicates limited effect. Both the oriented growth and oriented nucleation will fail if high purity deformation matrix without clear solute drag and Zener drag has not experienced an obvious recovery before recrystallization grain growth, since extremely high net driving force leads to very small critical nucleus size and multiplicity of growing grains, which results in randomization of recrystallization texture.


1999 ◽  
Vol 572 ◽  
Author(s):  
S. C. Kang ◽  
B. H. Kum ◽  
S. J. Do ◽  
J. H. Je ◽  
M. W. SHIN

ABSTRACTThis paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes ( SBDs ). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850 °C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650 °C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.


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