Dielectric Property of PZT Thin Films Doped with PMnN

The high piezoelectricity and high mechanical quality factor thin films are very important for the fabrications of micro devices. The Pb(Zrx,Ti1-x)O3(PZT) thin films own high piezoelectricity, however, its mechanical quality factor is small. The proper doping of Pb(Mn1/3,Nb2/3)O3(PMnN) will perfectly improve the mechanical quality of the films. However, the doping of PMnN will change the dielectric property of PZT thin films, and so it’s very necessary to investigate the dielectric property of PZT thin films doped with different ratio of PMnN. In this paper, the Pb(Mn1/3,Nb2/3)O3- PbZrO3-PbTiO3(PMnN-PZT) thin films with different doping ratio of PMnN are deposited by the magnetron sputtering method, and the X-ray diffraction is applied to analyze the structure of thin films, and the relative dielectric constant are characterized by the LCR testing system. The results show that the PMnN-PZT thin films with smaller doping ratio than 20% exhibit polycrstal structure, and the dielectric constant of thin films increase with the doping ratio of PMnN sharply, especially the doped PMnN is smaller than 6 mol percent. All the dielectric constants decrease with the testing frequency, and which have little change if the testing frequency is larger than 2.5kHz.

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High Temperature Dielectric Properties of Sol-Gel Derived Thick PZT thin Films with Different Zr/Ti Atom Ratios

MRS Proceedings ◽

10.1557/proc-688-c7.4.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

Jinrong Cheng ◽

Wenyi Zhu ◽

Nan Li ◽

L.Eric Cross

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Remnant Polarization ◽

Elevated Temperatures ◽

Sol Gel ◽

Xrd Analysis ◽

Dielectric Constants ◽

Silicon Substrates ◽

Pzt Thin Films ◽

Pzt Films

AbstractPZT thin films of different thicknesses and Zr/Ti ratios of 60/40, 52/48 and 45/55 were coated onto platinized silicon substrates by using 2 methoxyethanol (2-MOE) based sol-gel spinon technique and crystallized with a rapid thermal annealing (RTA) process. XRD analysis revealed that thin PZT films exhibit random texture, while the thicker ones exhibit (100) texture, which was independent of composition. Dielectric constants and dissipation factors of PZT thin films were measured at elevated temperatures and as a function of frequency. For films with a thickness of ∼ 4 μm, the Curie points are at 350, 375 and 422°C for Zr/Ti ratios of 60/40, 52/48 and 45/55, respectively. All these films exhibit a high remnant polarization. A remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a composition close to MPB. The higher dielectric constant observed in films with the highest Zr content was explained by the concept of domain engineering.

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Electrical Properties of Sol-Gel Pzt Thin Films for decoupling Capacitor Applications

MRS Proceedings ◽

10.1557/proc-310-59 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 5

Author(s):

Robert W. Schwartz ◽

D. Dimos ◽

S. J. Lockwood ◽

V. M. Torres

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Sol Gel ◽

Dielectric Constants ◽

Applied Bias ◽

Leakage Currents ◽

Pzt Thin Films ◽

Decoupling Capacitor ◽

Sol Gel Process ◽

Room Temperature Dielectric Constant

AbstractThe successful development of PZT thin films for decoupling capacitor devices places stringent requirements on the dielectric and leakage properties of the films. We have characterized these properties for PZT thin films with compositions near the morphotropic phase boundary prepared by a sol-gel process. Capacitors were fabricated from films with thicknesses varying from 0.4 to 1.2 µm. For zero applied bias, the dielectric constants of these films were in the range of 800 to 1200. The room temperature dielectric constant was observed to decrease by ∼ 25% with the application of a 5 V bias. We have also characterized the interrelationships between temperature, applied bias, and dielectric constant. The capacitors exhibited asymmetry in their leakage and breakdown characteristics with bias sign, as well as non-linear I-V behavior. Breakdown fields for undoped PZT 53/47 films were typically in the range of 750 kV/cm.We have also studied the effects of La and Nb donor doping on the leakage behavior of PZT 50/50 thin films. Doping with 2 to 5 mol % of either La or Nb resulted in a reduction in film leakage current by a factor of 103. Leakage currents of the highly doped materials were approximately 2 × 10−9 A/cm2 under an applied field of ∼ 65 kV/cm at a temperature of 125×C.

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Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.177 ◽

2007 ◽

Vol 124-126 ◽

pp. 177-180

Author(s):

Jang Sik Lee ◽

Q.X. Jia

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Dielectric Properties ◽

Bottom Electrode ◽

Dielectric Constants ◽

The Other ◽

Field Range ◽

Anisotropic Dielectric ◽

Dielectric Nonlinearity ◽

La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

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Mechanical Quality Factor of Pb(ZrxTi 1−x) 1−y (Mg1/3Nb2/3)yO3 Solid Solution Prepared by Wet-Dry Combination Method

Electrochemistry ◽

10.5796/electrochemistry.67.985 ◽

1999 ◽

Vol 67 (10) ◽

pp. 985-987

Author(s):

Yoshiyuki ABE ◽

Taisyu YANAGISAWA ◽

Kazuyuki KAKEGAWA ◽

Yoshinori SASAKI

Keyword(s):

Solid Solution ◽

Quality Factor ◽

Mechanical Quality Factor ◽

Combination Method ◽

Mechanical Quality

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Time Dependence of the Mechanical Quality Factor in “Hard” Lead Zirconate Titanate Ceramics: Development of an Internal Dipolar Field and High Power Origin

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.9119 ◽

2006 ◽

Vol 45 (12) ◽

pp. 9119-9124 ◽

Cited By ~ 25

Author(s):

Yongkang Gao ◽

Kenji Uchino ◽

Dwight Viehland

Keyword(s):

Time Dependence ◽

Quality Factor ◽

Lead Zirconate Titanate ◽

High Power ◽

Lead Zirconate ◽

Mechanical Quality Factor ◽

Dipolar Field ◽

Zirconate Titanate ◽

Mechanical Quality ◽

Titanate Ceramics

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Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

MRS Proceedings ◽

10.1557/proc-493-189 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 2

Author(s):

C. H. Lin ◽

B. M. Yen ◽

Haydn Chen ◽

T. B. Wu ◽

H. C. Kuo ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Fatigue Behavior ◽

Chemical Vapor ◽

Dielectric Constants ◽

Preferential Orientation ◽

Organic Chemical ◽

Pzt Thin Films ◽

Si Substrates ◽

Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

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A Microcontroller Approach to Measuring Transmissibility of MEMS Devices

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2015dpc-wp31 ◽

2015 ◽

Vol 2015 (DPC) ◽

pp. 001564-001593

Author(s):

Chong Li ◽

Yixuan Wu ◽

Haoyue Yang ◽

Luke L. Jenkins ◽

Robert N. Dean ◽

...

Keyword(s):

Resonant Frequency ◽

Quality Factor ◽

Real Time ◽

High Speed ◽

Mechanical Quality Factor ◽

Quantization Noise ◽

Mems Devices ◽

Input And Output ◽

Mechanical Quality ◽

Mems Device

The transmissibility reveals two very useful characteristics of a micro-electro-mechanical systems (MEMS) device, the resonant frequency and the mechanical quality factor. Real time knowledge on these two important factors can enhance application performance or avoid potential problems from environmental disturbances due to fabrication tolerances and the resulting operational differences in otherwise identical devices. Expensive laboratory equipment is typically used to measure the transmissibility. However, these test systems are not readily adaptable to field use. Therefore, it is important to be able to measure the transmissibility using a real time technique with a simplified test setup. This study proposes a technique that can compute the transmissibility in real time using a low cost microcontroller. This technique utilizes two laser vibrometers to detect the input and output motions of the proof mass in a MEMS device, which are fed to high speed 500 KHz analog to digital converters (ADC) in the microcontroller. A filtering step is performed to decrease noise. After the sampling and pre-filtering, a Fast Fourier Transform (FFT) is performed to convert the time-domain signals to frequency domain signals. The amplitude of the output signal at each frequency is divided by the amplitude of the corresponding input signal at each frequency to obtain the transmissibility. To overcome the difficulties resulting from measurement and quantization noise, a recursive calculating algorithm and a de-quantization filter are introduced. The recursive calculating process guarantees that the system updates the results continually, which results in a transmissibility plot covering the entire bandwidth. The de-quantization filter considers the validity of the data and performs the transmissibility division step accordingly. A cantilevered structure was chosen as the device-under-test to verify and evaluate this technique. The cantilevered device was attached to an electromechanical shaker system for vibratory stimulation. Two laser vibrometers were used to detect the input and output motion and this data was fed into a microcontroller. The microcontroller was STM32F407, which is 32-bit and 168 MHz controller. The tests demonstrated that this technique can measure the transmissibility and therefore the resonant frequency and mechanical quality factor accurately compared to a professional signal analyzer.

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