Spray Deposited Thin Films of Tin-Doped Indium Oxide for Optoelectronic Applications

2013 ◽  
Vol 677 ◽  
pp. 173-178 ◽  
Author(s):  
Oleksandr Malik ◽  
F.J. de la Hidalga-W
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Oxide ◽  
Electrical And Optical Properties ◽  
Conducting Electrode ◽  
Wide Range ◽  
Ito Thin Films ◽  
Optoelectronic Applications ◽  
Ito Films

The structural, electrical, and optical properties of spray deposited tin-doped indium oxide (ITO) films are reported in this work. The films have excellent properties, as a transparent and conducting electrode, for applications in a wide range of areas of optoelectronics such as photodetection and photovoltaic. One example of the ITO thin films application in semiconductor-insulating-semiconductor (SIS) efficient solar cells and modules is shown.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

Investigation of Electrical and Optical Properties of Low Resistivity Indium Oxide Thin Films

2021 ◽  
Vol 102 (3) ◽  
pp. 95-111
Author(s):  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Oxide ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Low Resistivity

Electrical and optical properties of thin films prepared by spin coating a dispersion of nano-sized tin-doped indium oxide particles

2002 ◽  
Vol 11 (5) ◽  
pp. 675-678 ◽  
Author(s):  
Jesper Ederth ◽  
Annette Hult ker ◽  
Peter Heszler ◽  
Gunnar A Niklasson ◽  
Claes G Granqvist ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Oxide ◽  
Spin Coating ◽  
Electrical And Optical Properties ◽  
Oxide Particles

Electrical and optical properties of thin films prepared by spin coating a dispersion of nano-sized tin-doped indium-oxide particles

2001 ◽  
Author(s):  
Jesper Ederth ◽  
Annette Hultaker ◽  
Peter Heszler ◽  
Gunnar A. Niklasson ◽  
Claes-Goeran Granqvist ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Oxide ◽  
Spin Coating ◽  
Electrical And Optical Properties ◽  
Oxide Particles

Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Silicon Solar Cells ◽  
Shunt Resistance ◽  
Cell Parameters ◽  
Ito Film ◽  
Ito Thin Films ◽  
Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

2021 ◽  
Vol 13 (8) ◽  
pp. 1498-1505
Author(s):  
Long Wen ◽  
Bibhuti-B Sahu ◽  
Jeon-Geon Han ◽  
Geun-Young Yeom
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxygen Vacancies ◽  
Discharge Voltage ◽  
Processing Temperature ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.

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