Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

2021 ◽  
Vol 13 (8) ◽  
pp. 1498-1505
Author(s):  
Long Wen ◽  
Bibhuti-B Sahu ◽  
Jeon-Geon Han ◽  
Geun-Young Yeom
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxygen Vacancies ◽  
Discharge Voltage ◽  
Processing Temperature ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

Spray Deposited Thin Films of Tin-Doped Indium Oxide for Optoelectronic Applications

2013 ◽  
Vol 677 ◽  
pp. 173-178 ◽  
Author(s):  
Oleksandr Malik ◽  
F.J. de la Hidalga-W
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Oxide ◽  
Electrical And Optical Properties ◽  
Conducting Electrode ◽  
Wide Range ◽  
Ito Thin Films ◽  
Optoelectronic Applications ◽  
Ito Films

The structural, electrical, and optical properties of spray deposited tin-doped indium oxide (ITO) films are reported in this work. The films have excellent properties, as a transparent and conducting electrode, for applications in a wide range of areas of optoelectronics such as photodetection and photovoltaic. One example of the ITO thin films application in semiconductor-insulating-semiconductor (SIS) efficient solar cells and modules is shown.

The Effect of Annealing on the Electrical and Optical Properties of Cu-In-O Thin Films

2011 ◽  
Vol 287-290 ◽  
pp. 2125-2130
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Ping Fan ◽  
Dong Ping Zhang ◽  
Li Jun Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Optical Band Gap ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Annealing Temperatures ◽  
Almost All

Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering with two composite targets. The films were annealed in air at 400 °C for 3 hours and the effect of annealing was investigated. The samples are polycrystalline and contain mainly In2O3mixed with CuO. Annealing dose not further oxidize the samples, possibly due to the low annealing temperatures. Annealing slightly improves the crystalline quality of the films. Annealing increases the transmittances of almost all the samples by annihilating oxygen vacancies and hence widening the optical band gap. The conductivity of the samples is due to In2O3but is compensated by CuO inside the films and annealing greatly reduces the conductivity by driving out the oxygen vacancies. The In target partly masked with a Cu plate provides more convenience in adjusting the composition and properties of Cu-In-O films.

Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

2011 ◽  
Vol 687 ◽  
pp. 585-590
Author(s):  
Feng Lu ◽  
Cheng Hai Xu ◽  
Li Shi Wen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Wurtzite Structure ◽  
Crystal Phase ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x×10-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Sputtering ◽  
Processing Parameters ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 362-367
Author(s):  
Feng Lu ◽  
Yu Sun ◽  
Cheng Hai Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure ◽  
Doped Zno

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD，electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

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