Structure and Photoelectric Properties of Dy Doped CdS Polycrystalline Thin Films

2013 ◽  
Vol 750-752 ◽  
pp. 1901-1905 ◽  
Author(s):  
Kai Zou ◽  
Rong Ping Li ◽  
Yong Sheng Liu ◽  
Lei Tian ◽  
Song Feng
Keyword(s):  
Thin Films ◽  
Hexagonal Phase ◽  
Visible Region ◽  
Electron Beam Evaporation ◽  
Stoichiometric Ratio ◽  
Photoelectric Properties ◽  
Polycrystalline Thin Films ◽  
Cds Thin Films ◽  
Dy Doping ◽  
Cds Films

Using chemical bath deposition (CBD) deposited CdS thin films for two times and prepared CdS films contained different thickness Dy-doping layer by connecting using the vacuum electron beam evaporation method, then studied the structure, surface morphology, optical and electrical properties of the films. The results show that no-doped CdS films are the cubic structure and preferentially oriented in the (111) directions. Its conductive type is N type. After Dy doping the CdS thin films are mixed structure by cubic and hexagonal phase, the conductive type is still N type, the uniformity and compactness of the films are improved. At the same time, the proportion of Cd and S atoms in Dy-doping films are more close to the stoichiometric ratio. Dy-doping can also reduce the resistivity of the films, result in an increase of carrier concentration and improve the transmittance in the visible region.

scholarly journals Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 87
Author(s):  
Atef S. Gadalla ◽  
Hamdan A. S. Al-shamiri ◽  
Saad Melhi Alshahrani ◽  
Huda F. Khalil ◽  
Mahmoud M. El Nahas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Photon Energy ◽  
Hexagonal Phase ◽  
High Vacuum ◽  
Structural Features ◽  
Film Deposition ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Films

In this study, cadmium Sulfide (CdS) thin films were synthesized on quartz substrates using an infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~10−6 Torr) conditions. X-ray diffraction was used to evaluate the structural features. According to X-ray analysis, the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic. The peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300 °C, the orthorhombic phase transformed into a predominant hexagonal phase and the same result was obtained by SEM photographs as well. Spectrophotometric measurements of transmittance and reflectance of the CdS films were used to derive optical constants (n, k, and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have also been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared CdS films are promising for application in optoelectronic field.

scholarly journals Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

2021 ◽  
Author(s):  
Hamdan Ali Sultan Ali Sultan Al-shamiri ◽  
Atef S. Gadalla ◽  
Huda F. Khalil ◽  
Mahmoud M. El Nahas ◽  
Mohamed A. Khedr
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Photon Energy ◽  
Hexagonal Phase ◽  
High Vacuum ◽  
Structural Features ◽  
Film Deposition ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Films

Abstract Cadmium Sulfide (Cds) thin films were synthesized on quartz substrates using infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~ 10− 6 Torr). X-ray diffraction was used to evaluate the structural features. According to X-ray analysis the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic system and the peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300oC the orthorhombic phase transformed into predominant hexagonal phase and the same result was obtained by SEM photographs. Spectrophotometric measurements of transmittance and reflectance of the Cds films were used to derive optical constants (n, k and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared Cds films are promising for application in optoelectronic field.

Effect of electrolyte solution and deposition methods on TiO2/CdS core–shell nanotube arrays for photoelectrocatalytic application

2020 ◽  
Vol 92 (2) ◽  
pp. 20102
Author(s):  
Selma M.H. AL-Jawad ◽  
Natheer Jamal Imran ◽  
Mohammad R. Mohammad
Keyword(s):  
Thin Films ◽  
Electrolyte Solution ◽  
Spectral Response ◽  
Hexagonal Phase ◽  
Visible Region ◽  
Photogenerated Electron ◽  
Cds Nanoparticles ◽  
Core Shell ◽  
Sem Images ◽  
Cds Films

In this work, TiO2 nanostructure thin films were deposited by using anodization technique, while CdS thin films were deposited on TiO2 films by two methods chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). The structure of TiO2/CdS films were investigated and analyzed by XRD, SEM, and AFM, but the optical properties were investigated by UV–visible spectroscopy, PL spectroscopy, and spectral response. XRD analysis of all deposited films has confirmed the formation of two phases one is tetragonal phase (anatase, and rutile) for TiO2, and second hexagonal phase which belong to CdS layer. SEM images of TiO2 nanotubes arrays (NTAs)/CdS showed the TiO2 NTs walls become decorated with aggregates of fine CdS nanoparticles that partly penetrate into the TiO2 NTAs pores. AFM measurements displayed increase in the surface roughness compared with TiO2 films. PL measurement results of TiO2/CdS core–shell show two peaks, one is located at UV-region pointed to energy band gap for TiO2 nano films, and second one is located at visible region pointing to recombination of photogenerated electron–hole pairs within CdS layers. Spectral response measurements showed photocurrent peaks for all TiO2/CdS films deposited with different electrolyte solution have red-shift to visible region. When illuminated with a UV–Vis light source, the TiO2/CdS core–shell films displayed high response. A higher response to UV–Vis light was attained with the use of TiO2 NTAs/CdS films prepared by anodization /CBD. This approach offers a technique for fabricating photoelectrodes.

A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures

2018 ◽  
Vol 18 (12) ◽  
pp. 8333-8336 ◽  
Author(s):  
Guangde Wang ◽  
Xinyu Zhang ◽  
Wenlong Jiang ◽  
Lizhong Wang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Visible Region ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Low Resistivity ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Layer Deposition ◽  
Doping Ratio

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

2012 ◽  
Vol 510-511 ◽  
pp. 156-162 ◽  
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Window Layer ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Cds Thin Film ◽  
Cds Thin Films ◽  
Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

Effect of Ammonium Acetate on the Properties of Chemical Bath Deposited CdS Films

2014 ◽  
Vol 1630 ◽  
Author(s):  
Abeer A. Al-Yafeai ◽  
Sovannary Phok ◽  
Sahar A. Al-Shaibani ◽  
Shifaa M. Al-Baity ◽  
Esmaeel M. Al-Hammadi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ammonium Acetate ◽  
Ph Value ◽  
Ammonium Hydroxide ◽  
Cadmium Acetate ◽  
Hexagonal Structure ◽  
Bath Solution ◽  
Electron Probe Micro Analyzer ◽  
Cds Thin Films ◽  
Cds Films

ABSTRACTThis investigation is a comprehensive study of the effect of ammonium acetate on the electrical, optical, morphology and microstructure of CdS thin films grown by Chemical Bath Deposition method (CBD). Two sets of CdS thin films (A and B) were deposited on glass substrates at 60°C for 60 min. The films were deposited using chemical bath solution that consists of cadmium acetate, ammonium hydroxide, and thiourea. However, ammonium acetate was added into the chemical bath used to deposit set (B), where ammonium acetate was eliminated from bath solution used to deposit set (A). The films’ morphology was examined by Field Emission Scanning Electron Microscopy (FE-SEM), whereas, the chemical composition was investigated by Electron Probe Micro-Analyzer (EPMA). The X-Ray Diffraction (XRD) θ/2θ technique was applied to study the structure of the films. Atomic Force Microscopy (AFM) was used to measure the average surface roughness of the films, and Dektak Profilometer was used to determine the CdS films thickness. The optical and electrical properties for the films were determined using UV-Vis-NIR Spectrometer, and the Hall Effect technique, respectively. The highest carrier mobility was obtained for the films deposited in an ammonium acetate free bath. However, both films were polycrystalline with hexagonal structure exhibiting a tendency toward <002> texture, that increase with increasing the pH value of the chemical bath.

Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Deposition Time ◽  
Layer Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thiourea Solution ◽  
Cds Thin Films ◽  
Cds Films

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

scholarly journals Structural, morphological, optical and diode properties of chemical bath deposited nano-structured CdS thin films using EDTA as a complexing agent

2019 ◽  
Vol 37 (3) ◽  
pp. 317-323
Author(s):  
S.N. Vidhya ◽  
R.T. Karunakaran
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optical Transmittance ◽  
Sem Analysis ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Region I ◽  
Cds Thin Films ◽  
Photoluminescence Studies

AbstractCdS thin films with (1 1 1) orientation were prepared by chemical bath deposition technique at 80±5 °C using the reaction between NH4OH, CdCl2 and CS(NH2)2. The influence of annealing temperature varying from 150 °C to 250 °C was studied. X-ray diffraction studies revealed that the films are polycrystalline in nature with cubic structure. Various parameters, such as dislocation density, stress and strain, were also evaluated. SEM analysis indicated uniformly distributed nano-structured spherically shaped grains and net like morphology. Optical transmittance study showed the wide transmittance band and absence of absorption in the entire visible region. I-V characterization of p-Si/n-CdS diode and photoluminescence studies were also carried out for the CdS films.

scholarly journals Annealing Effects on the Properties of Chemically Deposited CdS Thin Films at Ambient Condition

2012 ◽  
Vol 60 (2) ◽  
pp. 283-288 ◽  
Author(s):  
G. Mustafa ◽  
M.R.I. Chowdhury ◽  
D.K. Saha ◽  
S. Hussain ◽  
O. Islam
Keyword(s):  
Thin Films ◽  
Hexagonal Phase ◽  
Ambient Condition ◽  
Cubic Phase ◽  
Optical And Electrical Properties ◽  
Grain Sizes ◽  
Increase With Increase ◽  
Annealing Effects ◽  
Cds Thin Films ◽  
Absorption Measurements

Chemically-deposited CdS thin films have been investigated using various techniques to discuss annealing effects on the structural, morphological, optical and electrical properties of the films. It has been observed from XRD that the deposited layers are mainly consisting of CdS phase. After annealing, metastable cubic phase was transformed into stable hexagonal phase. The average grain sizes were found to increase and the lattice constant, micro-strain and dislocation density were found to decrease after annealing. Optical absorption measurements show that band gap is observed to be 2.42 eV for as deposited and be 2.27 eV upon heat treatment at 673 K for one hour in air. The conductivity of this film has been determined by I-V measurement and observed to increase with increase of temperature. The activation energy of electrical conductivity of this film is also determined.DOI: http://dx.doi.org/10.3329/dujs.v60i2.11536 Dhaka Univ. J. Sci. 60(2): 283-288, 2012 (July)

Sign in / Sign up

Export Citation Format

Share Document