Reliability Research of Capacitive RF-MEMS Switch

2013 ◽  
Vol 753-755 ◽  
pp. 2507-2510
Author(s):  
Ming Xin Song ◽  
Rui Wu ◽  
Qian Liu ◽  
Hong Wang ◽  
Zuo Bao Cao ◽  
...  
Keyword(s):  
Failure Mechanism ◽  
Rf Mems ◽  
Dielectric Material ◽  
Elastic Coefficient ◽  
Dielectric Thickness ◽  
Rf Mems Switch ◽  
Dielectric Charging ◽  
Mems Switch ◽  
Simulation Results ◽  
Plate Distance

This paper presents the model of capacitive RF-MEMS switch for the lifetime prediction. The model is based on dielectric charging failure mechanism. The simulation results show that lifetime can reach 1000 hours when elastic coefficient (K) adopts 4-16N/m, Si3N4 as dielectric material, 0.4-1μm of dielectric thickness, 2-5μm of plate distance, less than 20V of driven voltage.

Dielectric Charging Failure Analysis of RF-MEMS Switch

2013 ◽  
Vol 274 ◽  
pp. 170-173 ◽  
Author(s):  
Ming Xin Song ◽  
Guo Xu Zheng ◽  
Rui Wu
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Theoretical Calculations ◽  
Mems Devices ◽  
Elastic Coefficient ◽  
Dielectric Thickness ◽  
Dielectric Charging ◽  
Mems Switch ◽  
Adhesion Failure ◽  
Plate Distance

MEMS devices commercialization is hindered by reality problems. Among them main problem is caused by dielectric charging. This paper studies charging model and charges distribution which are constructed on adhesion failure. Lifetime prediction formula is given. Simulation results show that under the condition of low driven voltage requirement, lifetime is bigger than 1000 hours when elastic coefficient (K) adopts 4-16N/m, 0.4-1μm for dielectric thickness, 2-5μm for plate distance and S3iN4 as dielectric material. At last, C-V performances inflected by dielectric charging is studied by theoretical calculations and analyzing positive or negative charging respectively.

scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

Research on the Dynamic Response of Capacitive RF-MEMS Switch

2013 ◽  
Vol 791-793 ◽  
pp. 1909-1912 ◽  
Author(s):  
Ming Xin Song ◽  
Rui Wu
Keyword(s):  
Differential Equation ◽  
Dynamic Response ◽  
Response Time ◽  
Rf Mems ◽  
Beam Width ◽  
Beam Length ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Beam Thickness ◽  
Simulation Results

Dynamic response time is an important performance parameter for capacitive RF-MEMS switch. This paper establishes a differential equation, in order to analyse the influencing factors of dynamic response time. The simulation results show that pulling-down time can reach 7.5μs when beam length equals to 200μm, beam width equals to 30μm, beam thickness equals to 1μm, beam material adopts Al and dielectric layer selects Si3N4.

scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

Impact Velocity Analysis of Capacitive RF-MEMS Switch

2014 ◽  
Vol 981 ◽  
pp. 560-563
Author(s):  
Rui Wu ◽  
Ming Xin Song
Keyword(s):  
Differential Equation ◽  
Influencing Factors ◽  
Impact Velocity ◽  
Bias Voltage ◽  
Rf Mems ◽  
Velocity Analysis ◽  
Rf Mems Switch ◽  
Rectangular Wave ◽  
Mems Switch ◽  
Simulation Results

Impact velocity is an important performance parameter for capacitive RF-MEMS switch. This paper establishes a differential equation, in order to analyse the influencing factors of impact velocity. The simulation results show that impact velocity can reach 1.5m/s when bias voltage equals to 0.7V, frequency equals to 3×105Hz, voltage type adopts rectangular wave.

Design of elliptical-shaped reconfigurable patch antenna with shunt capacitive RF-MEMS switch for satellite applications

2020 ◽  
pp. 1-10
Author(s):  
Bokkisam Venkata Sai Sailaja ◽  
Ketavath Kumar Naik
Keyword(s):  
Return Loss ◽  
Satellite Communication ◽  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Split Ring Resonator ◽  
Antenna Design ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Satellite Applications

Abstract In this paper, non-uniform meandered line shunt capacitive RF-MEMS switch is presented at an elliptical patch etched with a split-ring resonator (SRR) for satellite communication applications. The non-uniform meander line shunt capacitive is a fixed-fixed type of RF-MEMS switch that is introduced in this model antenna. The proposed antenna design is resonated at 10.46 GHz with the return loss of −37.6 dB. The performance evolution of the proposed antenna design is evaluated with and without integrated RF-MEMS switch on the proposed antenna SRR. It is observed that the proposed model at the ON-state switch resonates at 10.57 GHz frequency with the return loss of −30 dB. Similarly, at the OFF-state switch, it resonates at 10.53 GHz frequency with the return loss of −43 dB. Al3N4 (aluminum nitride) is used for the switch as a dielectric material, hence the switch attains higher isolation. The actuation voltage of 7.9 V is required for the switch to actuate from ON to OFF state. The switch attains minimum insertion and return loss which is discussed in further sections. The proposed antenna is fabricated and tested by a vector network analyzer; there is a good agreement between the simulated and measured results.

Analysis of a novel double driving signal line and driving electrodes separated RF MEMS switch

2017 ◽  
Vol 31 (11) ◽  
pp. 1750113
Author(s):  
Zhiqiang Chen ◽  
Wenchao Tian ◽  
Xiaotong Zhang
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Small Displacement ◽  
Matlab Simulation ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Signal Line ◽  
Comparison Results ◽  
Simulation Results ◽  
Driving Signal

A novel double driving signal line and driving electrodes separated radio frequency (RF) micro-electromechanical system (MEMS) switch was proposed in this paper to overcome the problems of the high actuation voltage, small displacement, and long pull-down time of the RF MEMS switches. Dynamic equations of the micro beam were built based on the small deflection theory. Dynamic behaviors of the proposed RF MEMS switch were analyzed and calculated by the variable separation method. The effects of different driving voltages, structure parameters and materials on the RF MEMS switch performance were discussed in detail. The simulation results presented that the proposed RF MEMS switch had an actuation voltage of 26 V, a pull-down time of 31.5 [Formula: see text] and an actuation displacement of 3 [Formula: see text]. The results also showed that the pull-down time of micro beam increased as the dielectric layer thickness increased. When the beam thickness was higher than 1.1 [Formula: see text], the switch could not pull down anymore. Additionally, the switch had a lowest pull down time when Al was used as micro beam material, compared to Au, Si, and SiC. The COMSOL Multiphysics finite element analysis was carried out to validate the MATLAB simulation results, and the comparison results were basically consistent with the MATLAB simulation results. Besides, the proposed switch had an insertion loss of −0.2 dB on up-state and isolation of more than −20 dB on down-state at 60 GHz derived from the electromagnetic simulation results. The actuation voltage, pull-down time, actuation displacement, and electromagnetic performances of the proposed RF MEMS switch were compared to some other switches, which were better than some existing switches.

Microwave Performance Simulation of RF-MEMS Switch

2014 ◽  
Vol 981 ◽  
pp. 564-567 ◽  
Author(s):  
Rui Wu ◽  
Ming Xin Song
Keyword(s):  
Insertion Loss ◽  
Dielectric Layer ◽  
Return Loss ◽  
Rf Mems ◽  
Groove Depth ◽  
Calculation Model ◽  
Performance Simulation ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Simulation Results

This paper presents the calculation model of capacitive RF-MEMS switch for the isolation and insertion loss, and then adopts CST software to simulate microwave performances. The simulation results show that return loss can reach-21.5dB and isolation can reach-0.26dB when the distance between contacting metal and dielectric layer adopts 2ڌ̏̽, 6×?103ڌ̏̽2 of contacting area and 20ڌ̏̽ of groove depth.

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