Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy

2009 ◽  
Vol 79-82 ◽  
pp. 823-826
Author(s):  
X.Y. Zhou ◽  
Yun Zhou ◽  
G.Y. Wang ◽  
Y. Wang ◽  
Helen Lai Wah Chan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Structure ◽  
Bias Field ◽  
Sio2 Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Laser Molecular Beam Epitaxy ◽  
Si Substrates ◽  
Transmission Electron

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 897-903
Author(s):  
P. Mandeville ◽  
A. J. SpringThorpe ◽  
C. J. Miner ◽  
R. A. Bruce ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Parameters ◽  
Current Gain ◽  
Hall Resistance ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas

Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Multilayered Structures of SrNb0.1Ti0.9O3/La0.8Sr0.2MnO3/SrTiO3 Prepared by Laser Molecular Beam Epitaxy

2002 ◽  
Vol 17 (3) ◽  
pp. 600-608
Author(s):  
X. L. Ma ◽  
H. B. Lu ◽  
F. Chen ◽  
Z. H. Chen ◽  
G. Z. Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Theoretical Calculations ◽  
Geometrical Model ◽  
Charge Ordering ◽  
Multilayered Structures ◽  
Laser Molecular Beam Epitaxy ◽  
Transmission Electron ◽  
Orthorhombic Cell ◽  
Resolution Imaging

Multilayer oxides of SrNb0.1Ti0.9O3/La0.8Sr0.2MnO3/SrTiO3 have been grown by computer-controlled laser molecular beam epitaxy and characterized by transmission electron microscopy. Electron microdiffractions and high-resolution imaging reveal that the as-prepared thin film of La0.8Sr0.2MnO3 with thickness of 200 nm is epitaxially grown on the SrTiO3(001) substrate and the SrNb0.1Ti0.9O3 with thickness of 250 nm epitaxially on the as-received La0.8Sr0.2MnO3 film. The microstructures in the La0.8Sr0.2MnO3 film are clarified in terms of the oriented microdomains. In contrast, microstructures in SNTO are featured by the formation of superstructures due to charge ordering. Crystallographic relationships of these domains are discussed on the basis of an orthorhombic cell and rationalized by theoretical calculations based on a geometrical model.

Interrelation between Strain Relaxation and InxAl1-xAs Compositional Graded Step Buffer Layers on GaAs Substrate Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 124-126 ◽  
pp. 127-130
Author(s):  
Sook Hyun Hwang ◽  
Yu Mi Park ◽  
Hoon Ha Jeon ◽  
Kyung Seok Noh ◽  
Jae Kyu Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Compositional Gradient ◽  
Transmission Electron ◽  
Two Samples ◽  
Compositional Gradients

We have grown delta-doped In0.5Ga0.5As /In0.5Al0.5As heterostructures on GaAs substrate applying with InxAl1-xAs compositional graded-step buffers, called metamorphic structures, grown by molecular beam epitaxy. Three types of buffer layers with different compositional gradients and thicknesses have designed to investigate the influence of the strain relaxation process. We characterized the samples by using transmission electron microscopy, triple-axis X-ray diffraction and Hall measurement. Two samples with different compositional gradient show almost same results in electrical properties. On the other hand, it is found that samples with different step thicknesses had shown the large differences in epilayer tilt and mosaic spread in the step-graded buffers. These results indicate that there exists an interrelation between the strain-relaxed buffer and 2DEG transport properties.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

2001 ◽  
Vol 16 (1) ◽  
pp. 261-267 ◽  
Author(s):  
H. Zhou ◽  
A. Rühm ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
M. Gross ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Fringe Contrast ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Inversion Domain Boundaries

GaN grown on sapphire (α–Al2O3) was characterized by laser-induced molecular beam epitaxy. Threading dislocations with Burgers vectors of 1/3〈1120〉, 1/3〈1123〉 and [0001] were observed with a predominance of the first type. Additionally, inversion domains with Ga-polarity existed with respect to the adjacent matrix, which was of N-polarity. The dislocation densities and coherence lengths were deduced from x-ray diffraction and found to be in accordance with those measured by transmission electron microscopy. Both displacement fringe contrast analysis and high-resolution transmission electron microscopy results indicated that the inversion domain boundaries had Ga–N bonds between domains and the adjacent matrix.

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