High Breakdown Voltage GaN Power HEMT on Si Substrate

2013 ◽  
Vol 805-806 ◽  
pp. 948-953
Author(s):  
Cen Kong ◽  
Jian Jun Zhou ◽  
Jin Yu Ni ◽  
Yue Chan Kong ◽  
Tang Sheng Chen
Keyword(s):  
Breakdown Voltage ◽  
Low Cost ◽  
Electronic Devices ◽  
Power Electronic ◽  
Si Substrate ◽  
Field Plate ◽  
Maximum Current Density ◽  
Gan Hemt ◽  
Maximum Current ◽  
State Resistance

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

scholarly journals Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors

RSC Advances ◽  
2019 ◽  
Vol 9 (17) ◽  
pp. 9678-9683 ◽  
Author(s):  
Jinho Bae ◽  
Hyoung Woo Kim ◽  
In Ho Kang ◽  
Jihyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Power Electronic ◽  
Field Plate ◽  
High Breakdown Voltage

Field-plated β-Ga2O3 nanoFETs with a breakdown voltage of over 300 V pave a way for downsizing power electronic devices.

Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 366-367
Author(s):  
J.H. Mazur ◽  
J. Washburn ◽  
T. Henderson ◽  
J. Klem ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Cross Sections ◽  
Low Cost ◽  
Electronic Devices ◽  
Compound Semiconductors ◽  
View Point ◽  
Si Substrate ◽  
Antiphase Boundaries ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Si Substrates

Possibility of growth of epitaxial lll-V (GaAs, InP, GaP, etc.) compound semiconductors on nonpolar substrates (Ge,Si) is of considerable interest from the view point of monolithic integration of lll-V optoelectronic and Si electronic devices. The growth of GaAs and AIGaAs layers on Si substrates is additionally attractive because of good mechanical strength and low cost of Si substrates. However, a principal difficulty in growing polar semiconductors on nonpolar substrates is that there are no preferential bonding sites for cations and anions in the first layer of growth, which can result in antiphase boundaries (APB’s) in addition to defects due to misfit (∼4% for GaAs on Si).In this work GaAs layers were grown on (100) Si substrates using procedures described elsewhere. The MBE growth started from a first deposition of As as a prelayer on the Si substrate followed by GaAs growth at 580°C. Cross-sectional TEM specimens were prepared using the same procedures as reported earlier for the case of Si-SiO2 cross-sections.

Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

2019 ◽  
Vol 12 (5) ◽  
pp. 054007 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiaohua Ma ◽  
Yi Chuan Zhang ◽  
Tianmin Lei
Keyword(s):  
Millimeter Wave ◽  
Breakdown Voltage ◽  
Field Plate ◽  
Gan Hemt

Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

2003 ◽  
Author(s):  
Wataru Saito ◽  
Yoshiharu Takada ◽  
Masahiko Kuraguchi ◽  
Kunio Tsuda ◽  
Ichiro Omura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt ◽  
High Breakdown Voltage

scholarly journals Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

2018 ◽  
Vol 68 (3) ◽  
pp. 290 ◽  
Author(s):  
Mr Amit ◽  
Dipendra Singh Rawal ◽  
Sunil Sharma ◽  
Sonalee Kapoor ◽  
Robert Liashram ◽  
...  
Keyword(s):  
Leakage Current ◽  
Output Power ◽  
Breakdown Voltage ◽  
Close Agreement ◽  
Simulation Software ◽  
Plate Structures ◽  
Field Plate ◽  
Gan Hemt ◽  
Source Voltage ◽  
Simulation Results

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

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