scholarly journals Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

2018 ◽  
Vol 68 (3) ◽  
pp. 290 ◽  
Author(s):  
Mr Amit ◽  
Dipendra Singh Rawal ◽  
Sunil Sharma ◽  
Sonalee Kapoor ◽  
Robert Liashram ◽  
...  
Keyword(s):  
Leakage Current ◽  
Output Power ◽  
Breakdown Voltage ◽  
Close Agreement ◽  
Simulation Software ◽  
Plate Structures ◽  
Field Plate ◽  
Gan Hemt ◽  
Source Voltage ◽  
Simulation Results

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs

2004 ◽  
Vol 14 (03) ◽  
pp. 884-889 ◽  
Author(s):  
HO-YOUNG CHA ◽  
Y. C. CHOI ◽  
LESTER F. EASTMAN ◽  
MICHAEL G. SPENCER
Keyword(s):  
Breakdown Voltage ◽  
Simulation Study ◽  
Two Dimensional ◽  
Plate Structures ◽  
Field Plate ◽  
Simulation Results ◽  
Good Agreement

The effects of field-plate structures on SiC MESFETs were investigated using two-dimensional simulations. The simulation results without a field-plate were in good agreement with the characteristics of fabricated SiC MESFETs. The breakdown voltage was increased by 80 % when the optimum field-plate was applied to the device with a 0.5 μm long gate and a 1 μm spacing between gate and drain; a breakdown voltage of 240 – 250 V was obtained from a 0.35 μm field-plate, while 140 V was obtained without a field-plate.

Design of Broadband GaN HEMT Power Amplifier with Ku Band

2012 ◽  
Vol 263-266 ◽  
pp. 39-42 ◽  
Author(s):  
Zhi Qun Cheng ◽  
Li Wei Jin ◽  
Wen Shi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Operating Conditions ◽  
Power Gain ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Dc Bias ◽  
Simulation Results ◽  
Two Stages ◽  
Ku Band

A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled first. And then the module consists of two stages amplifiers. The first stage amplifier is single-stage amplifier and the second is two-way combiner amplifier. Wilkinson power divider, DC bias circuits and microstrip matching circuits are simulated and designed carefully. Simulation results showed that the amplifier module exhibits a power gain of 7 dB, power added efficiency of 13.9%, and an output power of 16 W under Vds=28 V, Vgs=-3.6 V, CW operating conditions at the frequency of 15 GHz.

High Breakdown Voltage GaN Power HEMT on Si Substrate

2013 ◽  
Vol 805-806 ◽  
pp. 948-953
Author(s):  
Cen Kong ◽  
Jian Jun Zhou ◽  
Jin Yu Ni ◽  
Yue Chan Kong ◽  
Tang Sheng Chen
Keyword(s):  
Breakdown Voltage ◽  
Low Cost ◽  
Electronic Devices ◽  
Power Electronic ◽  
Si Substrate ◽  
Field Plate ◽  
Maximum Current Density ◽  
Gan Hemt ◽  
Maximum Current ◽  
State Resistance

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

Ultra Broadband Power Amplifier Based on GaN HEMT

2013 ◽  
Vol 475-476 ◽  
pp. 1685-1688
Author(s):  
Zhi Qun Cheng ◽  
Min Shi Jia ◽  
Xin Xiang Lian ◽  
Ya Luan
Keyword(s):  
Frequency Response ◽  
Output Power ◽  
Power Amplifier ◽  
Negative Feedback ◽  
Power Gain ◽  
Gan Hemt ◽  
Wide Range ◽  
Dc Bias ◽  
Simulation Results

An Ultra broadband power amplifier module based on GaN HEMT is studied. TGF2023-02 Chip of GaN HEMT from TriQuint Corporation is adopted and modeled first. The amplifier is designed with negative feedback technique. DC bias circuits and microstrip matching circuits are simulated and optimized carefully. Simulation results show that the amplifier module has a wide range frequency response from 3 to 8 GHz. It exhibits power gain of 7.6 dB, an output power of 37.5dBm under DC bias of Vds= 28 V, Vgs= -3.6 V at the frequency of 5.5 GHz.

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

2005 ◽  
Vol 52 (2) ◽  
pp. 159-164 ◽  
Author(s):  
W. Saito ◽  
M. Kuraguchi ◽  
Y. Takada ◽  
K. Tsuda ◽  
I. Omura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Surface Defect ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemt

The Effect of Oxide Fixed Charge on the Breakdown Characteristics of SiC Lateral Super Junction Devices

2011 ◽  
Vol 121-126 ◽  
pp. 1585-1589 ◽  
Author(s):  
Hu Jun Jia ◽  
Guo Dan Zhou ◽  
Yin Tang Yang ◽  
Bao Xing Duan
Keyword(s):  
Electric Field ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Charge Compensation ◽  
Fixed Charge ◽  
Negative Effects ◽  
Field Plate ◽  
Negative Effect ◽  
Simulation Results ◽  
A Charge

In this paper, the positive and negative effects of oxide fixed charge on the breakdown characteristic of lateral SiC super junction devices are studied. Simulation results show that in the super junction devices with oxide layer, the negative (or positive) fixed charge on the SiO2/SiC interface act as a like p-pillar (or n-pillar) and enhance the depletion of n-pillar (or p-pillar), which result in a charge compensation and improvement of the breakdown characteristics of the devices. At the same time, a phenomenon of electric field crowding can be caused by the fixed charge and result in a decreasing of the breakdown voltage, this negative effect can be suppressed sufficiently by a field plate.

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