scholarly journals Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

2020 ◽  
Vol 2 ◽  
pp. 92-97
Author(s):  
Yang-Hua Chang ◽  
Jyun-Jhih Wang ◽  
Gui-Lin Shen
Keyword(s):  
Breakdown Voltage ◽  
Field Plate ◽  
Gan Hemt ◽  
State Breakdown ◽  
Double Channel

High Breakdown Voltage GaN Power HEMT on Si Substrate

2013 ◽  
Vol 805-806 ◽  
pp. 948-953
Author(s):  
Cen Kong ◽  
Jian Jun Zhou ◽  
Jin Yu Ni ◽  
Yue Chan Kong ◽  
Tang Sheng Chen
Keyword(s):  
Breakdown Voltage ◽  
Low Cost ◽  
Electronic Devices ◽  
Power Electronic ◽  
Si Substrate ◽  
Field Plate ◽  
Maximum Current Density ◽  
Gan Hemt ◽  
Maximum Current ◽  
State Resistance

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

scholarly journals Breakdown Voltage Enhancement of Al0.1Ga0.9N channel HEMT With Recessed Floating Field Plate

2021 ◽  
Author(s):  
Ramkumar Natarajan ◽  
Eswaran Parthasarathy
Keyword(s):  
Breakdown Voltage ◽  
Hafnium Oxide ◽  
Figure Of Merit ◽  
Drain Current ◽  
Power Switching ◽  
High Power Microwave ◽  
Field Plate ◽  
State Breakdown ◽  
Power Microwave ◽  
Microwave Characteristics

Abstract In this paper, electrical and microwave characteristics of Al0.1Ga0.9N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 µm, gate to drain distance LGD = 1 µm, and HfO2(SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The proposed device DC characteristics are validated with reported expeimental work, which shows similar IDS and 54% and and 31% improvement in breakdown voltage on comparisons with conventional HEMT.

Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

2019 ◽  
Vol 12 (5) ◽  
pp. 054007 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiaohua Ma ◽  
Yi Chuan Zhang ◽  
Tianmin Lei
Keyword(s):  
Millimeter Wave ◽  
Breakdown Voltage ◽  
Field Plate ◽  
Gan Hemt

Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

2003 ◽  
Author(s):  
Wataru Saito ◽  
Yoshiharu Takada ◽  
Masahiko Kuraguchi ◽  
Kunio Tsuda ◽  
Ichiro Omura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt ◽  
High Breakdown Voltage

scholarly journals Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

2018 ◽  
Vol 68 (3) ◽  
pp. 290 ◽  
Author(s):  
Mr Amit ◽  
Dipendra Singh Rawal ◽  
Sunil Sharma ◽  
Sonalee Kapoor ◽  
Robert Liashram ◽  
...  
Keyword(s):  
Leakage Current ◽  
Output Power ◽  
Breakdown Voltage ◽  
Close Agreement ◽  
Simulation Software ◽  
Plate Structures ◽  
Field Plate ◽  
Gan Hemt ◽  
Source Voltage ◽  
Simulation Results

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Silicon ◽  
2021 ◽  
Author(s):  
Nisha Chugh ◽  
Manoj Kumar ◽  
Subhasis Haldar ◽  
Monika Bhattacharya ◽  
R.S. Gupta
Keyword(s):  
Radio Frequency ◽  
Power Electronic ◽  
Field Plate ◽  
Gan Hemt ◽  
Double Channel

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

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