Effect of Sintering Temperature on Microstructure and Electrical Properties of (Mn, Nb)-Doped BZT-BCT Ceramics

2013 ◽  
Vol 820 ◽  
pp. 59-62 ◽  
Author(s):  
Cheng Zhang ◽  
Qi Bin Liu ◽  
Xiao Qin Huang
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Piezoelectric Coefficient ◽  
Sintering Temperature ◽  
Lead Free ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Solid State Reaction Route

To obtain lead-free 0.5Ba (Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics with excellent microstructure and electrical properties, BZT-BCT ceramics doping Mn4+ and Nb5+ was synthesized follow a conventional solid state reaction route. By means of SEM, XRD, quasi-static d33 meter, the influence of sintering temperature on microstructure, piezoelectric and dielectric properties of BZT-BCT-Mn-Nb ceramics was discussed. The results show that grain size and the dielectric loss of BZT-BCT-Mn-Nb ceramics increase as raising the sintering temperature. When BZT-BCT-Mn-Nb ceramics is sintered at 1380°C, the optimum piezoelectric coefficient and dielectric constant are 264pC/N and 4142, respectively.

Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

2013 ◽  
Vol 820 ◽  
pp. 208-211
Author(s):  
Li Li ◽  
Qi Bin Liu
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Leakage Current ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Technological Parameters ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Zno Varistors ◽  
Solid State Reaction Route

To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

Molten Salt Synthesis of Nanocrystalline Phase of High Dielectric Constant Material CaCu3Ti4O12

2008 ◽  
Vol 8 (11) ◽  
pp. 5762-5769 ◽  
Author(s):  
B. Shri Prakash ◽  
K. B. R. Varma
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Solid State ◽  
Molten Salt ◽  
Solid State Reaction ◽  
Molten Salt Synthesis ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Phase Pure ◽  
Solid State Reaction Route

Nanocrystalline powders of giant dielectric constant material, CaCu3Ti4O12 (CCTO), have been prepared successfully by the molten salt synthesis (MSS) using KCl at 750 °C/10 h, which is significantly lower than the calcination temperature (∼1000 °C) that is employed to obtain phase pure CCTO in the conventional solid-state reaction route. The water washed molten salt synthesized powder, characterized by X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), and Transmission electron microscopy (TEM) confirmed to be a phase pure CCTO associated with ∼150 nm sized crystallites of nearly spherical shape. The decrease in the formation temperature/duration of CCTO in MSS method was attributed to an increase in the diffusion rate or a decrease in the diffusion length of reacting ions in the molten salt medium. As a consequence of liquid phase sintering, pellets of as-synthesized KCl containing CCTO powder exhibited higher sinterability and grain size than that of KCl free CCTO samples prepared by both MSS method and conventional solid-state reaction route. The grain size and the dielectric constant of KCl containing CCTO ceramics increased with increasing sintering temperature (900 °C–1050 °C). Indeed the dielectric constants of these ceramics were higher than that of KCl free CCTO samples prepared by both MSS method and those obtained via the solid-state reaction route and sintered at the same temperature. Internal barrier layer capacitance (IBLC) model was invoked to correlate the observed dielectric constant with the grain size in these samples.

Structural and dielectric properties of SrFexTi1-xO3 (x = 0.001, 0.005 and 0.01) ceramics

2013 ◽  
Vol 03 (01) ◽  
pp. 1350006
Author(s):  
Zhanwu Yu ◽  
Peng Shi ◽  
Wei Ren ◽  
Xiaoqing Wu ◽  
Xi Yao
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Lattice Constant ◽  
Doping Concentration ◽  
Sintering Temperature ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction

Three different SrFe x Ti 1-x O 3(x = 0.001, x = 0.005, x = 0.01) ceramics were prepared by the conventional solid-state reaction. The crystalline structure, surface morphology and dielectric properties were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and Agilent 4294A impedance analyzer, respectively. It is shown that both the sintering temperature and doping concentration influence the lattice constant, grain size, dielectric constant and the dielectric loss. When the sintering temperature is higher than 1390°C, the lattice constant, grain size and dielectric constant all decrease with the increase of the doping concentration, except the dielectric loss tangent which shows the opposite trend. Leakage current tests show that the leakage current density falls down with the increase of Fe doping concentration in the given region.

Effect of Sintering Temperature on Structure and Dielectric Properties of Lead Free K0.5Na0.5NbO3 Prepared via Hot Isostatic Pressing

2017 ◽  
Vol 888 ◽  
pp. 42-46 ◽  
Author(s):  
Fatin Khairah Bahanurdin ◽  
Julie Juliewatty Mohamed ◽  
Zainal Arifin Ahmad
Keyword(s):  
Grain Size ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Hot Isostatic Pressing ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Tangent Loss ◽  
Isostatic Pressing ◽  
Tan Δ

In this research, alkaline niobate known as K0.5Na0.5NbO3 (KNN) lead-free piezoelectric ceramic was synthesis by solid state reaction method which pressing at different sintering temperatures (1000 °C and 1080 °C) prepared via hot isostatic pressing (HIP)). The effect of sintering temperature on structure and dielectric properties was studied. The optimum sintering temperature (at 1080 °C for 30 minutes) using hot isostatic pressing (HIP) was successfully increase the density, enlarge the particle grain size in the range of 0.3 µm – 2.5 µm and improves the dielectric properties of K0.5Na0.5NbO3 ceramics. The larger grain size and higher density ceramics body will contribute the good dielectric properties. At room temperature, the excellent relative permittivity and tangent loss recorded at 1 MHz (ɛr = 5517.35 and tan δ = 0.954), respectively for KNN1080HIP sample. The KNN1080HIP sample is also exhibits highest relative density which is 4.485 g/cm3. The ɛr depends upon density and in this work, the density increase as the sintering temperature increase, which resulting the corresponding ɛr value also increases.

Low Temperature Sintering of Lead-Free BaTiO3-Based X9R Ceramics with Bi2O3 Dopant and Assisted by LiF-CaF2 Flux Agent

2014 ◽  
Vol 906 ◽  
pp. 31-36 ◽  
Author(s):  
Bao Lin Zhang ◽  
Bin Bin Zhang ◽  
Ning Ning Wang ◽  
Jun Zhang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Temperature Stability ◽  
Lead Free ◽  
Low Temperature Sintering ◽  
Pure Silver ◽  
Flux Agent ◽  
Low Sintering Temperature

The sintering temperature of BaTiO3powder was reduced to 950°C due to the Bi2O3-LiF-CaF2addition.Excellent densification was achieved after sintering at 950°C for 10h. The low sintering temperature of newly developed capacitor materials allows a co-firing with pure silver electrodes.The dielectric constant and the temperature stability of the dielectric constant satisfied the X9R standard, which dielectric properties of were ε25°C1115, ΔC/C25°C±12% (55~200°C), tanδ1.5% (25°C).

Electrical Properties of Modified BNT Based Lead-Free Ceramics

2016 ◽  
Vol 872 ◽  
pp. 87-91
Author(s):  
Supalak Manotham ◽  
Tawee Tunkasiri ◽  
Pharatree Jaita ◽  
Pichitchai Butnoi ◽  
Denis Russell Sweatman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Free Ceramics

The properties of modified Bi0.5Na0.5TiO3 (BNT) based lead-free ceramics were investigated. The BNT-based ceramics were prepared by a solid-state mixed oxide method Phase formation was determined by X-ray diffraction technique (XRD). The X-ray diffraction analysis of the ceramics suggested that all samples exhibited a perovskite structure without second phase. The value of dielectric constant increased with increasing in sintering temperature. Moreover, high sintering temperatures could improve ferroelectric properties of BNT base lead-free ceramics.

Preparation and Dielectric Properties of Sm3+-Substituted SrBi8Ti7O27 Based Microwave Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 95-98
Author(s):  
Yan Xiang Wang ◽  
C. Fang ◽  
Min Tang ◽  
Hong Qiu ◽  
Zhao Xian Xiong
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction ◽  
High Dielectric Constant ◽  
Microwave Ceramics ◽  
Reaction Route ◽  
Solid State Reaction Route ◽  
Dta And Tg ◽  
High Dielectric

Sr(Bi1-xSmx)8Ti7O27 ceramics were prepared by Sm2O3-substitution for Bi2O3 through solid-state reaction route. The dielectric properties of the sintered bodies such as er, Q and tf were investigated. The ceramics were characterized by SEM, XRD, DTA and TG, which behaved high dielectric constant of 128 ~154 at the frequency of 10 GHz.

Effect of Sintering Temperature on Properties of Multiferroic BaFe12O19/MgFe2O4/BaTiO3 Composites

2016 ◽  
Vol 846 ◽  
pp. 410-415
Author(s):  
M.F.A. Zolkepli ◽  
Rozidawati Awang ◽  
Zalita Zainuddin
Keyword(s):  
Grain Size ◽  
Solid State ◽  
Electrical Properties ◽  
Sintering Temperature ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Solid State Reaction Technique ◽  
Conventional Solid State Reaction ◽  
Different Temperatures ◽  
Tetragonal Batio

In this paper, the structural, magnetic and electrical properties of multiferroic BaFe12O19/MgFe2O4/BaTiO3 composites have been studied. BaFe12O19/MgFe2O4/BaTiO3 composites were synthesized by using the conventional solid state reaction technique and sintered at different temperatures. XRD analysis confirmed the existence of hexagonal BaFe12O19, cubic spinel MgFe2O4 and tetragonal BaTiO3 for ferrites and ferroelectric phases, respectively. The suitable sintering temperature for preparing BaFe12O19/MgFe2O4/BaTiO3 composites is between 1000 °C and 1050 °C. SEM analysis showed that as a whole the grain size increases and the pores is reduced with sintering temperature; thus the sample became denser. The coercive field and saturation magnetization decreases when sintering temperature is increased. Resistance of the samples decrease from 103 kW to 19 kW while the capacitance increases from 0.8 nF to 4.0 nF with sintering temperature.

Low-Temperature Sintering Lead-Free Barium Titanate-Based X7P Ceramics with Bi2O3 Dopant and ZnO–B2O3 Flux Agent

2012 ◽  
Vol 560-561 ◽  
pp. 886-891
Author(s):  
Bao Lin Zhang ◽  
Shun Hua Wu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Temperature Stability ◽  
Lead Free ◽  
Low Temperature Sintering ◽  
Pure Silver ◽  
Flux Agent ◽  
Low Sintering Temperature

The sintering temperature of BaTiO3 powder was reduced to 870°C due to the H3BO3-ZnO-Bi2O3 addition.Excellent densification was achieved after sintering at 870°C for 15h. The low sintering temperature of newly developed capacitor materials allows a co-firing with pure silver electrodes.The dielectric constant and the temperature stability of the dielectric constant satisfied the X7P requirements, which dielectric properties of were ε25°C≥ 2800, εr/εr25°C≤±10% (–55~125°C), tanδ≤1.5% (25°C).

Thermal stability and enhanced electrical properties of Er3+-modified Na0.5Bi4.5Ti4O15 lead-free piezoelectric ceramics

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 94870-94875 ◽  
Author(s):  
Zhongran Yao ◽  
Ruiqing Chu ◽  
Zhijun Xu ◽  
Jigong Hao ◽  
Wei Li ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Resistivity ◽  
Solid State ◽  
Electrical Properties ◽  
Solid State Reaction ◽  
Piezoelectric Ceramics ◽  
Lead Free ◽  
Reaction Route ◽  
High Electrical Resistivity ◽  
Solid State Reaction Route

Na0.5Bi4.5−xErxTi4O15 (NBET-x, x = 0, 0.006, 0.012, 0.018, 0.025) lead-free piezoelectric ceramics, with high electrical resistivity were prepared by a solid-state reaction route.

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