Thin Film Thickness and Uniformity Measurement for Lab-on-Chip Based Nanoelectrode Biosensor Development

2013 ◽  
Vol 832 ◽  
pp. 95-100
Author(s):  
Balakrishnan Sharma Rao ◽  
Uda Hashim ◽  
Tijjani Adam
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Wafer Surface ◽  
Thin Film Thickness ◽  
Lab On Chip ◽  
High Temperature Process ◽  
High Temperature Processes ◽  
Pressure Chemical ◽  
On Chip

One of the advantages of silicon substrate over other semiconductor substrate is the high temperature process capability of the silicon. In this work, silicon wafer is used for thermal processing which involves many high temperature processes such as oxidation and deposition. Thin films on the wafer surface are investigated for its thickness and uniformity. Silicon dioxide (SiO2) is initially grown using wet oxidation method and characterized for its thickness using FilmetricsSpectrometer. The thickness of SiO2 achieved is less than 300nm. Silicon Nitride (Si3N4) is then deposited by sputter method and its thickness is measured at 210 nm. For the electrode, polysilicon (PolySi) is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process. Silane (SiH4) is used as the source forPolySi deposition and the thickness is measured at 160nm. Standard deviation is calculated based on the layer thickness and the uniformity is checked across 5 points on the wafer. Hence, it is very important to have a uniform layer across the wafer surface for a defect free device and at the same time it protects the sensitivity of the sensor.

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate

2009 ◽  
Vol 145-146 ◽  
pp. 189-192 ◽  
Author(s):  
Rui Hasebe ◽  
Akinobu Teramoto ◽  
Tomoyuki Suwa ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Chemical Vapor ◽  
Wafer Surface ◽  
The Past ◽  
Silicon Wafer Surface ◽  
Alkali Solutions ◽  
High Temperature Processes ◽  
Clean Air ◽  
Processing Steps

With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Band Offsets ◽  
Pressure Chemical

Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide By Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehmet C. Öztürk ◽  
Jimmie J. Wortman ◽  
Yu-Lin Zhong ◽  
Xiao-Wei Ren ◽  
Roderick M. Miller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Passivation Layers ◽  
Pressure Chemical ◽  
Reactive Gas

ABSTRACTLow-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide in a lampheated cold-wall rapid thermal processor have been investigated. Silicon dioxide films have been deposited by thermal decomposition of tetraethylorthosilicate known as TEOS. The technique can be used for rapid deposition of good quality thick passivation layers at moderate temperatures. Polycrystalline silicon depositions have been accomplished using silane (SiH4) diluted in argon as the reactive gas. Surface roughness and resistivity of the films deposited at temperatures above 700°C are comparable in quality to films deposited in a conventional LPCVD reactor at 610°C. In this temperature range, deposition rates as high as 4000Å/min can be obtained.

Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

1997 ◽  
Vol 470 ◽  
Author(s):  
H. Gilboa ◽  
Y. E. Gilboa ◽  
Z. Atzmon ◽  
S. Levy ◽  
H. Spilberg ◽  
...  
Keyword(s):  
High Temperature ◽  
Flash Memory ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Wafer Cleaning ◽  
Front End ◽  
Wafer Processing ◽  
Cluster Tool ◽  
Temperature Applications

ABSTRACTThe evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

scholarly journals Effect of the combustion system on reduction of thermal specific energy consumption in an industrial high temperature process

DYNA ◽  
2021 ◽  
Vol 88 (217) ◽  
pp. 273-281
Author(s):  
Bernardo Herrera ◽  
Juan Rivas ◽  
Jorge Muñoz ◽  
Karen Cacua
Keyword(s):  
Energy Consumption ◽  
High Temperature ◽  
Residence Time ◽  
Specific Energy Consumption ◽  
Specific Consumption ◽  
Combustion System ◽  
Combustion Gases ◽  
Flat Flame ◽  
High Temperature Process ◽  
High Temperature Processes

This paper presents an experimental study carried out in an industrial furnace for frits production using different configurations of burners based on different combustion techniques such as enriched air combustion, flat-flame oxy-combustion and preheater air combustion. The residence time of combustion gases inside the furnace also was modified. Several combustion configurations were tested and its effects on productivity and thermal energy specific consumption and efficiency were determined. The results show that higher residence time of the combustion gases can decrease significantly the specific consumption of fuel, while the change of the burners and combustion techniques did not show significant effects on decreasing the energy consumption. However, it is highlighted that the oxy-combustion flat-flame burners produced the lowest specific consumption of fuel. Even though the experiments were conducted in a furnace for frit production, the corresponding results can also be applied to guide or improve other industrial high temperature processes.

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