Thickness Dependence of Structural and Optical Properties of Al/ZnO Films Prepared by DC Magnetron Sputtering

2013 ◽  
Vol 856 ◽  
pp. 193-196 ◽  
Author(s):  
Zohreh Ghorannevis ◽  
Marzieh Asadi Milani ◽  
Maryam Habibi ◽  
Mahmood Ghoranneviss

In this paper, AZO thin films of different thicknesses were deposited on glass substrates as transparent conducting (TCO) films by changing the deposition time using a DC magnetron sputtering method. The effect of film thicknesses on the structural and optical properties of AZO films was investigated using X-ray diffractometer (XRD) and spectrophotometer, respectively. Results show that increasing the film thickness results in decreasing the optical transmittance. The optimum properties were obtained for a film with 500 nm thickness and 90 min deposition time, which exhibited a transmittance of 95%.

2011 ◽  
Vol 284-286 ◽  
pp. 2182-2186 ◽  
Author(s):  
Hua Fu Zhang ◽  
Han Fa Liu ◽  
Chang Kun Yuan

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4Ω·cm and 5.7×10-4Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2Ω for ZnO:Zr films lower than 5×10-2Ω for ZnO:Al films.


2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.


Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.


2020 ◽  
Vol 44 (1) ◽  
pp. 57-66
Author(s):  
Valeriy KIDALOV ◽  
Alena DYADENCHUK ◽  
Yuriy BACHERIKOV ◽  
Anton ZHUK ◽  
Tetyana GORBANIUK ◽  
...  

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.


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