Deposition of ZnS films by RF magnetron sputtering: Structural and optical properties using Z-scan technique

2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Film Structure ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
Xrd Patterns ◽  
Zns Films

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.

Deposition of ZnS thin films by electron beam evaporation technique, effect of thickness on the crystallographic and optical properties

2019 ◽  
Vol 33 (04) ◽  
pp. 1950034 ◽  
Author(s):  
Bassam Abdallah ◽  
Koutayba Alnama ◽  
Fareza Nasrallah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Dielectric Constants ◽  
Glass Substrates ◽  
Xrd Patterns

Deposition of Zinc sulfide (ZnS) thin films on Si (100) and glass substrates has been performed using electron beam evaporation (EBE) method without annealing. Film structure has been analyzed by XRD, while SEM and AFM have been used to explore the films morphology. Raman spectroscopy has been used to confirm film composition. The stoichiometry has been verified by EDX and XPS techniques. XRD patterns indicated that the films possess a polycrystalline cubic structure with orientations along (111) and (220) planes. The crystallinity has been better with film thickness in the 350–1700 nm range while the RMS roughness increases. Optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy band gap of the films shows a clear reduction from 3.45 eV to 3.36 eV with increasing film thickness. The evolution of refractive index, extinction coefficient, and dielectric constants with thickness has been investigated from transmittance spectra in the 500–1000 nm wavelength range.

RAMAN AND OPTOELECTRONIC PROPERTIES OF Zn1-xMgxO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 18 (05) ◽  
pp. 189-195 ◽  
Author(s):  
Q. L. HUANG ◽  
L. FANG ◽  
H. B. RUAN ◽  
B. D. GUO ◽  
F. WU ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Frequency Shifts ◽  
X Ray ◽  
Mg Doping ◽  
Glass Substrates ◽  
Structure Surface ◽  
Mg Content

A series of Zn 1-x Mg x O (x = 0 ~ 0.16) films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap (Eg) has linear relationship with Mg content: Eg = 1.67x + 3.274 (eV) (0 < x < 0.16). The resistivity of the films increases with the increase of Mg content. The Raman spectra of the films show that the position of E2 peaks (473 cm-1) has not changed, but the A1(LO) mode (577 cm-1) frequency shifts to lower wavenumbers with the increase of Mg content, indicating that Mg -doping does not cause intensive lattice deformation, but results in the decrease of the carrier concentration, which is corresponding to the degradation of the conductivity of ZnMgO films with the increase of Mg content.

Structural, optical and sensing properties of ZnS thick films deposited by RF magnetron sputtering technique at different powers

2020 ◽  
Vol 17 (3) ◽  
pp. 381-388
Author(s):  
Bassam Abdallah ◽  
Mahmoud Kakhia ◽  
Walaa Zetoune
Keyword(s):  
Magnetron Sputtering ◽  
Thick Films ◽  
Rf Magnetron Sputtering ◽  
Film Structure ◽  
Content Type ◽  
X Ray ◽  
Sensing Properties ◽  
Edx Analysis ◽  
Cubic Structure ◽  
Zns Films

Purpose This study aims to carry out the deposition of zinc sulfide (ZnS) thick films on glass and silicon (100) substrates using radio frequency (RF) magnetron sputtering method at different powers. Film structure has been analyzed by X-ray diffraction (XRD); the patterns showed that the films possesses a cubic structure with (111) preferred orientation. Photoluminance (PL) intensity of the films has been related to the crystallinity, which is varied with the power. Design/methodology/approach Scanning electron microscope (SEM) images have been used to discover the films’ morphology. The stoichiometry has been confirmed by energy dispersive X-ray spectroscopy (EDX) analysis. MicroRaman spectroscopy has been used to validate the film structure. Gas-sensing studies were carried out by means of a static gas chamber to sense acetone, ethanol, methanol, H2O and NH3 vapor in air ambient. Findings ZnS has a stoichiometric and cubic structure. The band gaps and photoluminance intensity of the films are correlated with the crystallinity, which is varied with the power. The EDX analysis approved the stoichiometry of the prepared films. Acetone, ethanol, humidity (H2O), methanol and NH3 vapor gases were used to justify the sensing properties at 25°C of the thickest ZnS film. Originality/value High-quality ZnS films have been obtained at different powers without annealing. Gases sensing properties at 25°C are justified for deposited ZnS films using acetone, ethanol, humidity (H2O), methanol and NH3 vapor gases. It reveals good response for NH3 and humidity vapors at room temperature; the sensing functioning at this temperature was attractive in recent research.

Micrographs and Optical Properties of Al-Doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 924 ◽  
pp. 176-180
Author(s):  
Yuan Yuan Li ◽  
Zhen Chen ◽  
Shu Li Li ◽  
Xi Long Li ◽  
Geng Rong Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Sem Images ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Light Region ◽  
Doped Zno

The micrographs and optical properties of Al-doped ZnO (AZO) films deposited by radio frequency (RF) magnetron sputtering are presented in this paper. The AZO films termed as films I, II and III were sputtered on glass substrates heating at 300C, 400C and 500C, respectively. The micrographs, crystal structures and optical properties of AZO thin films were analyzed by using scanning electronic microscopy (SEM) images, X-ray diffraction (XRD) pattern, optical transmission and reflection spectra ranging from 350 to 1000 nm. As the substrate temperature increases to 500C, the film III exhibits a better flatness surface and a larger grain size of ~25nm with a stronger c-axis orientation. The film II has a high transmittance of greater than 92% in the visible light region. We also show that the films II and III have significant red-shift band gap ~3.00 and ~3.13eV, respectively, in comparison with that of the film I (3.31eV). This might be due to the increasing doped Al atoms which do not activate due to segregation at the grain boundaries.

Thickness Dependence of Structural and Optical Properties of Al/ZnO Films Prepared by DC Magnetron Sputtering

2013 ◽  
Vol 856 ◽  
pp. 193-196 ◽  
Author(s):  
Zohreh Ghorannevis ◽  
Marzieh Asadi Milani ◽  
Maryam Habibi ◽  
Mahmood Ghoranneviss
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Deposition Time ◽  
Optical Transmittance ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Transparent Conducting

In this paper, AZO thin films of different thicknesses were deposited on glass substrates as transparent conducting (TCO) films by changing the deposition time using a DC magnetron sputtering method. The effect of film thicknesses on the structural and optical properties of AZO films was investigated using X-ray diffractometer (XRD) and spectrophotometer, respectively. Results show that increasing the film thickness results in decreasing the optical transmittance. The optimum properties were obtained for a film with 500 nm thickness and 90 min deposition time, which exhibited a transmittance of 95%.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Properties of ZnS Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 602-603 ◽  
pp. 966-969
Author(s):  
Lei Zhang ◽  
Jian Huang ◽  
Hui Min Yang ◽  
Ke Tang ◽  
Mei Ai Lin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Uv Visible ◽  
Zns Films

In this work, zinc sulfide (ZnS) thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates. The effects of sputtering power, working pressure, substrate temperature and annealing treatment on the structural and optical properties of ZnS films were studied using X-ray diffraction and UV-visible spectrometer in detailed.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Synthesis and Optical Properties of Eu3+ Doped NaYF4 and KYF4 Micro/Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3857-3860 ◽  
Author(s):  
Siling Guo ◽  
Chunyan Cao ◽  
Renping Cao
Keyword(s):  
Optical Properties ◽  
Emission Spectra ◽  
Local Environment ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Two Samples ◽  
Xrd Patterns ◽  
The Eu

Through a hydrothermal method, 1 mol% Eu3+ doped NaYF4 and KYF4 micro/nanocrystals have been synthesized. The materials were characterized by X-ray diffraction (XRD) patterns, field emission scanning electron microscopy (FE-SEM) images, room temperature photoluminescence (PL) excitation and emission spectra, and luminescent dynamic decay curves. The XRD analysis suggested the crystalline structures of the obtained samples. The FE-SEM images indicated the morphology and size of the obtained samples. The PL spectra illustrate the optical properties of Eu3+ in the two samples. Since it is sensitive to the local environment of the ion, the Eu3+ presents different optical properties in the NaYF4 and KYF4 materials.

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