Interdiffusion in Fe/Pt Multilayer Thin Films

2006 ◽  
Vol 258-260 ◽  
pp. 199-206 ◽  
Author(s):  
Se Young O ◽  
Dan Phuong Nguyen ◽  
Chan Gyu Lee ◽  
Bon Heun Koo ◽  
Byeong Seon Lee ◽  
...  

Interdiffusion in Fe/Pt multilayer thin films has been studied. [Fe(1nm)/Pt(1.5nm)]20 multilayers were prepared by DC magnetron sputtering technique and subsequently annealed at temperatures of 543 - 633K in vacuum lower than 10-6 torr. X-ray diffraction (XRD) studies on these multilayer systems revealed the interdiffusion coefficients from slope of the best straight line fit of first peak intensity versus annealing time. The temperature dependence of interdiffusion in the range of 543 - 633K can be described by D=4.98×10-24 exp (0.88eV/kT) m2S-1. The coercivity, measured by Vibrating Sample Magnetometer, of the multilayer with annealing time at 603K increased, which is believed to the increase of surface roughness by interdiffusion at the interfaces of Fe and Pt multilayers, enhancement of composition gradient; and/or formation of Fe-Pt reaction phase at the interface of Fe and Pt.

2005 ◽  
Vol 237-240 ◽  
pp. 554-559 ◽  
Author(s):  
Hui Myeong Lee ◽  
Byeong Seon Lee ◽  
Chan Gyu Lee ◽  
Yasunori Hayashi ◽  
Bon Heun Koo

We will discuss the stress release phenomena, structural relaxation and interdiffusion processes during annealing. The [Co(4nm)/Ta(4nm)]38 multilayers were prepared by dc magnetron sputtering on Si substrate. The multilayers were annealed at various temperatures (523 - 673K) in vacuum (under 10-5 torr) furnace. The effective interdiffusion coefficients were determined from the slope of the best straight line fit of the first peak intensity versus annealing time [d ln(I(t)/I(0)) /dt] by X-ray diffraction (XRD) low angle measurements. The drastic decrease of the relative intensity in the initial stage shown due to the structural relaxation was excluded in the calculation of effective interdiffusion coefficients. The temperature dependence of interdiffusion in the range of 523 - 673K is described by D = 3.2×10-19 exp(-0.51±0.11 eV/kT) m2s-1.


Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.


2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.


2002 ◽  
Vol 404-407 ◽  
pp. 791-796
Author(s):  
Pascale Villain ◽  
Philippe Goudeau ◽  
Pierre Olivier Renault ◽  
K.F. Badawi

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.


1994 ◽  
Vol 343 ◽  
Author(s):  
T.I. Selinder ◽  
D.J. Miller ◽  
K.E. Gray ◽  
M.A. Beno ◽  
G.S. Knapp

ABSTRACTInvestigation of the formation of new metastable phases in alloy thin films requires ways of quickly determining the crystalline structure of samples with different compositions. We report a novel technique for acquiring structural information from films intentionally grown with a composition gradient. For example, binary metal alloy films were deposited using a phase-spread sputtering method. In this way essentially the entire composition range could be grown in a single deposition. By using a narrow incident x-ray beam and a translating sample stage combined with a position sensitive x-ray detector technique, detailed information of the metastable phase diagram can be obtained rapidly. Compositional resolution of the order of ±0.2% can be achieved, and is limited by the brightness of the x-ray source. Initial results from studies of phase formation in Zr-Ta alloys will be presented. Extensions of the analysis technique to ternary systems will be discussed.


2002 ◽  
Vol 17 (7) ◽  
pp. 1622-1633 ◽  
Author(s):  
Xiaowu Fan ◽  
Mi-Kyoung Park ◽  
Chuanjun Xia ◽  
Rigoberto Advincula

Nanostructured montmorillonite/poly(diallyldimethylammonium chloride) multilayer thin films were fabricated up to 100 layers thick by stepwise alternating polyelectrolyte and clay deposition from solution. The structure and morphology of the films were characterized by x-ray diffraction, ellipsometry, atomic force microscopy, and quartz crystal microbalance ex situ and in situ measurements. The mechanical properties were tested by nanoindentation. The hardness of the multilayer thin film was 0.46 GPa. The thin film's modulus was correlated to its ordering and anisotropic structure. Both hardness and modulus of this composite film were higher than those of several other types of polymer thin films.


1991 ◽  
Vol 232 ◽  
Author(s):  
A. Waknis ◽  
E. Haftek ◽  
M. Tan ◽  
J. A. Barnard ◽  
E. Tsang

ABSTRACTPeriodic multilayer thin films of the form (xAl/yNi)n were grown by alternate deposition of pure Al and Ni using dc-magnetron sputtering. The thicknesses of the individual Al and Ni layers are given by x and y, respectively, and the total number of bilayer units is n. For this set of experiments, x was fixed at 3.5 nm while y was systematically varied from 2.4 to 154 nm. The films were tested in as-deposited and annealed states for magnetic properties using a vibrating sample magnetometer and for crystal structure by x-ray diffraction. In both the as-deposited and annealed samples the magnetization per unit volume of Ni declined as the Ni layer thickness decreased. This result can be interpreted in terms of a magnetically ‘dead’ layer at the Al/Ni interfaces. The width of the dead layer increased from 2.9 nm to 5.8 nm on annealing. Magnetic properties were correlated with crystal structure experiments by x-ray diffraction. As-deposited films yielded a Ni(111) texture. The Ni (111) peak decreased in intensity and broadened as the Ni thickness declined. Annealing produced evidence for the growth of the intermetallic NiAl3.


1990 ◽  
Vol 208 ◽  
Author(s):  
M. Bellotto ◽  
C. Cremnonesi ◽  
F. Parmigiani ◽  
M. Scagliotti ◽  
S. Beretta

ABSTRACTThin films of zirconium dioxide are deposited by e-beam evaporation on optically polished borosilicate crown glass. Two different oxygen partial pressures in the chamber are used. The optical properties of the films are characterized by ellipsometry. The influence of oxygen stoichiometry on the composition and microstructure of the material is investigated by polycrystalline X-ray diffraction for different film thicknesses. The films are found to be inhomogeneous, and a composition gradient (i.e. amorphous ⇔ tetragonal ⇔ monoclinic) is observed from the substrate to the surface. The oxygen partial pressure influences the growth of the films.


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