In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface

2011 ◽  
Vol 312-315 ◽  
pp. 132-137
Author(s):  
Hamid Khachab ◽  
Yamani Abdelkafi ◽  
Abderrahmane Belghachi
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
High Energy ◽  
Atomic Scale ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Precise Control ◽  
Homoepitaxial Growth ◽  
Reconstructed Surface

In situ monitoring of surface processes and understanding of growth processes are important in achieving precise control of crystal growth. Therefore, many surface monitoring techniques are used during crystal growth by molecular beam epitaxy (MBE). The most popular is reflection high-energy electron diffraction (RHEED) and photoemission current which provides information on the morphology during the growing surface. The photoemission oscillation technique has been successfully used in situ to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. In this paper, we report results of atomic scale simulations used to study the dynamics of homoepitaxial growth of GaAs(001) β2(2x4) reconstructed surface and, in particular, the RHEED oscillations of the photoemission current.

Rheed Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

1992 ◽  
Vol 275 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Peter Bodin ◽  
Hirofumi Matsuhata
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Molecular Beam ◽  
Superconducting Films ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Image Enhancing

ABSTRACTTo make Bi2Sr2CaCu2O8 superconducting films with top insulating SrTiO3, we use the molecular beam epitaxy technique (MBE) with in situ monitoring by reflection high-energy electron diffraction (RHEED). A new (RHEED)image enhancing technique, difference reflection high-energy electron diffraction (DRHEED) gave striking information on the growth process of each layer in the Bi:2212 compound as well as the rough and flat transition occurring during co-evaporated deposition of SrTi03.

Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy

2001 ◽  
Vol 700 ◽  
Author(s):  
R. Takahashi ◽  
Y. Matsumoto ◽  
H. Koinuma ◽  
M. Lippmaa ◽  
M. Kawasaki
Keyword(s):  
Molecular Beam ◽  
Ybco Film ◽  
High Sensitivity ◽  
High Energy ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Crystal Habit ◽  
Laser Focusing ◽  
The One

AbstractA new combinatorial pulsed laser deposition system has been developed for rapid optimization of epitaxial growth process by using a carrousel type masking plate. Under in-situ monitoring of growing surface with reflection high energy electron diffraction, eight films with different compositions or preparation parameters can be fabricated on a single substrate. By using this system, we have succeeded in the one lot optimization of YBa2Cu3O7-d(YBCO), PrGaO3, SrO and BaO film growths on the B-site (TiO2) terminated SrTiO3(001) substrates. Key results from these experiments include the high sensitivity of YBCO film crystallinity to the laser focusing as well as of growth behavior of epitaxial SrO and BaO films to the crystal habit with the underlying atomic layers.

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Reflection Electron Diffraction and Structural Behavior of Gaas / Gaas (111)B Grown Via Mbe

1990 ◽  
Vol 208 ◽  
Author(s):  
K. C. Rajkumar ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Electron Diffraction ◽  
Surface Morphology ◽  
High Energy ◽  
In Situ Monitoring ◽  
Spot Intensity ◽  
High Energy Electron ◽  
Surface Phase ◽  
Gaas Films ◽  
Reflection Electron Diffraction

Homoepitaxy on the {111} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

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