Characterization of Silicon Nitride Thin Films on Glass

2016 ◽  
Vol 368 ◽  
pp. 86-90
Author(s):  
Lukáš Šimůrka ◽  
Selen Erkan ◽  
Tuncay Turutoglu
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Silicon Nitride ◽  
The Other ◽  
Influence Of Process Parameters ◽  
Process Pressure ◽  
Key Factor ◽  
Dc Magnetron Reactive Sputtering ◽  
Nitrogen Flows

The influence of process parameters on amorphous reactively sputtered silicon nitride thin films is reported in this study. The films were prepared with various argon and nitrogen flows, and sputter power in in-line horizontal coater by DC magnetron reactive sputtering from Si (10% Al) target. Refractive index and mechanical properties like residual stress, hardness and elastic modulus were studied. We show that process pressure has an important influence on mechanical properties of the sputtered film. On the other hand, the nitrogen content is the key factor for the optical properties of the films.

Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

2001 ◽  
Vol 40 (Part 1, No. 6B) ◽  
pp. 4292-4298 ◽  
Author(s):  
Xue-Sen Wang ◽  
Zongquan Li ◽  
Lei Wang ◽  
Yanfang Hu ◽  
Guangjie Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride

Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

2009 ◽  
Vol 517 (14) ◽  
pp. 3975-3978 ◽  
Author(s):  
Kwangchol Park ◽  
Won-Deok Yun ◽  
Byoung-Jun Choi ◽  
Heon-Do Kim ◽  
Won-Jun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Growth Studies

Photoacoustic characterization of the mechanical properties of thin films

2002 ◽  
Vol 80 (4) ◽  
pp. 691-693 ◽  
Author(s):  
Carmen M. Hernandez ◽  
Todd W. Murray ◽  
Sridhar Krishnaswamy
Keyword(s):  
Thin Films ◽  
Mechanical Properties

Characterization of Single- and Multiple-Layer Films by X-Ray Reflectometry

1991 ◽  
Vol 35 (A) ◽  
pp. 137-142 ◽  
Author(s):  
T. C. Huang ◽  
W. Parrish
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
High Resolution ◽  
Single Layer ◽  
The Other ◽  
X Ray ◽  
Buried Interfaces ◽  
Multiple Layer ◽  
Reflectivity Data

AbstractPrecision X-ray reflectivity data were obtained with a high-resolution reflectometer equipped with a rotating anode X-ray source and Ge 220 channel monochromators (one placed before and the other after the specimen). The surfaces and buried interfaces of thin films were characterized by ieast-squares refinement of experimental data. Values of thickness, density, and/or roughness of Pt “single-layer” and Pt/Co based multiple-layer films were determined.

Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

2015 ◽  
Vol 742 ◽  
pp. 773-777
Author(s):  
Qun Feng Yang ◽  
Jian Yi Zheng ◽  
Jun Qing Wang ◽  
Jun Hui Lin ◽  
Xue Nan Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Mechanical Characteristics ◽  
Dielectric Films ◽  
Rotating Beam ◽  
Atomic Force ◽  
Scanning Electron

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.

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