Deep Drawing of Nickel Foil and Stainless Steel Foil

2003 ◽  
Vol 233-236 ◽  
pp. 353-358 ◽  
Author(s):  
Yasuo Marumo ◽  
Hiroyuki Saiki
2001 ◽  
Vol 2001 (0) ◽  
pp. 37-38
Author(s):  
Yasuo MARUMO ◽  
Hiroyuki SAIKI ◽  
Akira ONOUE

2021 ◽  
Vol 2020 (1) ◽  
pp. 012040
Author(s):  
S N Yuan ◽  
H B Xie ◽  
F H Jia ◽  
H Wu ◽  
D Pan ◽  
...  

1982 ◽  
Vol 68 (6) ◽  
pp. 649-657 ◽  
Author(s):  
Kiyohiko NOHARA ◽  
Kenji WATANABE ◽  
Yutaka ONO ◽  
Nobuo OHASHI

Alloy Digest ◽  
2002 ◽  
Vol 51 (1) ◽  

Abstract Allegheny Ludlum Type 305 (S30500) stainless steel is used for applications requiring a low rate of work hardening during severe cold-forming operations such as deep drawing. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on high temperature performance and corrosion resistance as well as heat treating and joining. Filing Code: SS-840. Producer or source: Allegheny Ludlum Corporation.


Alloy Digest ◽  
1999 ◽  
Vol 48 (9) ◽  

Abstract ALZ 305 is an austenitic stainless steel with excellent formability and good corrosion resistance, toughness, and mechanical properties. The higher amount of nickel in this grade enables high deep-drawing deformation without intermediate annealing. This datasheet provides information on composition, physical properties, and elasticity. It also includes information on corrosion resistance as well as forming, heat treating, and joining. Filing Code: SS-762. Producer or source: ALZ nv.


2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.


1996 ◽  
Vol 424 ◽  
Author(s):  
S. D. Theiss ◽  
S. Wagner

AbstractWe describe the successful fabrication of device-quality a-Si:H thin-film transistors (TFTs) on stainless-steel foil substrates. These TFTs demonstrate that transistor circuits can be made on a flexible, non-breakable substrate. Such circuits could be used in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.Two inverted TFT structures have been made, using 200 gim thick stainless steel foils with polished surfaces. In the first structure we used the substrate as the gate and utilized a homemade mask set with very large feature sizes: L = 45 μm; W = 2.5 mm. The second, inverted staggered, structure used a 9500 Å a-SiNx:H passivating/insulating layer deposited on the steel to enable the use of isolated gates. For this structure we used a mask set which is composed of TFTs with much smaller feature sizes. Both TFT structures exhibit transistor action. Current-voltage characterization of the TFTs with the inverted staggered structure shows typical on/off current ratios of 107, leakage currents on the order of 10-12 A, good linear and saturation current behavior, and channel mobilities of 0.5 cm2/V·sec. These characteristics clearly identify the TFTs grown on stainless steel foil as being of device quality.


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