Development of Lead-Free Piezoelectric Materials Using Domain Wall Engineering

2006 ◽  
Vol 320 ◽  
pp. 151-154
Author(s):  
Satoshi Wada ◽  
Koichi Yako ◽  
Tomomitsu Muraishi ◽  
Hirofumi Kakemoto ◽  
Takaaki Tsurumi
Keyword(s):  
Barium Titanate ◽  
Domain Wall ◽  
Electric Field ◽  
Single Crystals ◽  
Electric Fields ◽  
Applied Electric Field ◽  
Piezoelectric Materials ◽  
Domain Size ◽  
Lead Free ◽  
Gradient Domain

For the [111] oriented barium titanate (BaTiO3) single crystals, the patterning electrode was applied to induce the finer engineered domain configurations with domain size of 3 2m. The poling treatment was performed at 134 °C under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist. As the results, the gradient domain sizes from 3 to 8-9 2m were induced into the 31 resonator. The d31 was measured at -243.2 pC/N, and this value was almost 70 % of the expected d31 of –337.7 pC/N for the resonator with domain size of 3 2m. This difference was originated from lower applied electric field below 6 kV/cm. However, this study was revealed that the patterning electrode was very powerful tool to induce much finer domain sizes below 5 2m.

Enhanced Piezoelectric Properties of Barium Titanate Single Crystals by Domain Engineering

2006 ◽  
Vol 301 ◽  
pp. 23-26 ◽  
Author(s):  
Koichi Yako ◽  
Hirofumi Kakemoto ◽  
Takaaki Tsurumi ◽  
Satoshi Wada
Keyword(s):  
Barium Titanate ◽  
Electric Field ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
Domain Size ◽  
Domain Engineering ◽  
Domain Configuration ◽  
Piezoelectric Measurement ◽  
Batio3 Crystal ◽  
Curie Temperature Tc

Engineered domain configuration was induced into barium titanate (BaTiO3) single crystals, and the d33 piezoelectricity was investigated as a function of domain size. Prior to the domain engineering, the dependence of domain configuration on the temperature and the electric-field was investigated, and above Curie temperature (Tc), when the electric-field over 16 kV/cm was applied along [111]c direction, the fine engineered domain configuration appeared. On the basis of the above information, the 33 resonators with different domain sizes were successfully prepared. Their piezoelectric measurement revealed that the d33 of the 33 resonators with fine-engineered domain configurations were higher than those of BaTiO3 single-domain crystals. Moreover, d33 increased with decreasing domain sizes. The highest d33 of 289 pC/N was obtained in the BaTiO3 crystal with a domain size of 13μm.

scholarly journals Numerical simulation of domain wall motion in a surface discharge over a ferroelectric

2021 ◽  
Vol 2119 (1) ◽  
pp. 012124
Author(s):  
M S Bobrov ◽  
M Y Hrebtov ◽  
P V Yudin
Keyword(s):  
Numerical Simulation ◽  
Domain Wall ◽  
Electric Field ◽  
Applied Electric Field ◽  
Domain Wall Motion ◽  
Domain Size ◽  
Current Mode ◽  
Domain Growth ◽  
Surface Discharge ◽  
Model Interaction

Abstract The article presents a simplified numerical simulation of a vacuum ferroelectric cathode operating in a low-current mode (without surface plasma formation). The field emission from the cathode was simulated for the range of applied electric field magnitudes. The polarization domain growth process during the charging of ferroelectric surface was simulated using Landau-Ginzburg-Devonshire model. Interaction of the electrons with a depolarization field of a domain wall led to an attraction of the electrons to the polarization domain boundaries. A close to the linear dependence of the equilibrium domain wall position from the applied electric field was found with the total emitted charge proportional to the domain size.

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

INFLUENCE OF THE MAGNETIC FIELD ON THE TRANSVERSE RUNAWAY THRESHOLD

2007 ◽  
Vol 21 (10) ◽  
pp. 1715-1720 ◽  
Author(s):  
NANA METREVELI ◽  
ZAUR KACHLISHVILI ◽  
BEKA BOCHORISHVILI
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Electric Fields ◽  
Applied Electric Field ◽  
Nonlinear Oscillations ◽  
Hot Electrons ◽  
Total Field ◽  
Practical Applications ◽  
Energy And Momentum ◽  
The Magnetic Field

The transverse runaway (TR) is a phenomenon whereby for a certain combination of energy and momentum scattering mechanisms of hot electrons, and for a certain threshold of the applied electric field, the internal (total) field tends to infinity. In this work, the effect of the magnetic field on the transverse runaway threshold is considered. It is shown that with increasing magnetic field, the applied critical electric fields relevant to TR decrease. The obtained results are important for practical applications of the TR effect as well as for the investigation of possible nonlinear oscillations that may occur near the TR threshold.

Electrohydrodynamic Kelvin-Helmholtz Instability of Two Rotating Dielectric Fluids

1998 ◽  
Vol 53 (1-2) ◽  
pp. 17-26
Author(s):  
Mohamed Fahmy El-Sayed
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Applied Electric Field ◽  
Rotation Frequency ◽  
Short Wave ◽  
Surface Charges ◽  
Rotation Surface ◽  
Dielectric Fluids ◽  
Fluid Velocities ◽  
Conditions Of Stability

Abstract A linear stability analysis of a novel electrohydrodynamic Kelvin-Helmholtz system consisting of the superposition of two uniformly rotating dielectric media is presented. The characteristic equation for such an arrangement is derived, which in turn yields a stability criterion for velocity differences of disturbances at a given rotation frequency. The conditions of stability for long and short wave perturbations are obtained, and their dependence on rotation, surface tension and applied electric field is discussed. Limiting cases for vanishing fluid velocities, rotation frequency, and applied electric field are also discussed. Under suitable limits, results of previous works are recovered. A detailed analysis for tangential and normal applied electric fields, in the presence and absence of surface charges, is carried out.

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