Surface Morphology of Thin Film Deposited on Rotating Substrate by EB-PVD

2007 ◽  
Vol 336-338 ◽  
pp. 2238-2241
Author(s):  
Ying Chun Shan ◽  
Xiao Dong He ◽  
Ming Wei Li ◽  
Yao Li
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Rotation Axis ◽  
Kinetic Monte Carlo ◽  
Incident Angle ◽  
Critical Value ◽  
Surface Collision

The thin film deposited by electron beam physical vapor deposition (EB-PVD) on rotating substrate was approached via a kinetic Monte Carlo (KMC) algorithm on a “surface” of tight-packed rows. The motivation is to study the surface morphology distribution of thin film along the substrate radial. Effective deposition rate model and effective incident angle model were established along the substrate radial. Two phenomena are incorporated in the KMC simulation: adatom-surface collision and adatom diffusion. The KMC simulations show that the surface roughness of thin film is small and the changing of surface roughness is small near the side of rotation axis, however, the surface roughness is big near the side of substrate edge, and the surface roughness increases quickly with the increasing of substrate radius when r>300 mm. The simulation results indicate that the effective incident angle is the main factor to cause the changing of surface roughness: the effective incident angle does not reach critical value and the deposition rate difference is small when the radius is less than 300 mm, so the surface roughness of thin film in the scope is small and its changing is small, but when r>300 mm, the effective incident angles increase sharply with radius increasing and all of them are above the critical value, which cause surface roughness of thin film to increase quickly. Experiments reveal that the KMC method can predict surface roughness distribution of thin film deposited by EB-PVD on rotating substrate.

Kinetic Monte Carlo Study of Void Distribution in Nickel Thin Film by Physical Vapor Deposition

2007 ◽  
Vol 121-123 ◽  
pp. 1153-1156
Author(s):  
Xiao Dong He ◽  
Ying Chun Shan ◽  
Ming Wei Li
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Critical Incident ◽  
Physical Vapor Deposition ◽  
Kinetic Monte Carlo ◽  
Incident Angle ◽  
Void Distribution

2D kinetic Monte Carlo simulation has been used to study the void distribution of nickel thin film prepared by physical vapor deposition, and embedded atom method (EAM) was used to represent the interatomic interaction. Packing density and surface roughness were studied as the functions of deposition rate, substrate temperature and incident angle. The results reveal the existence of critical substrate temperature and critical incident angle, and higher substrate temperature, lower deposition rate and appropriate incident angle are advantaged to prepare the compact thin film with excellent mechanical properties.

Deposition Rate Effect of Alq3 Thin Film Growth: A Kinetic Monte Carlo Study

2008 ◽  
Vol 61 (8) ◽  
pp. 600
Author(s):  
Yih-Jiun Lin ◽  
Jian-Chuang Chang ◽  
Chin-Kuen Tai ◽  
Bo-Cheng Wang ◽  
Feng-Yin Li
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Surface Morphology ◽  
Deposition Rate ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Young Scientist ◽  
Film Surface ◽  
Monte Carlo Study ◽  
Island Growth

This paper is the winner of the Young Scientist Award at the Asian Chemical Congress in Kuala Lumpur, 2007. Applying the Kinetic Monte Carlo (KMC) technique, we successfully investigated the effect of deposition rate on the growth pattern of an Alq3 thin film. In good agreement with experimental results, our simulation results indicate that there exists a transition growth in terms of the deposition rate that corresponds to the transition between the island growth and random deposition growth. In the regions of island growth (where the deposition rate is lower than 1.1 Å s–1) and random deposition growth (where the deposition rate is higher than 3 Å s–1), the surface morphology is not suitable for luminant devices because of a high roughness, a larger inner vacancy ratio at higher deposition rate, and low homogeneity at lower deposition rate conditions. Within the transition growth region (deposition rate is between 1.1 and 3.0 Å s–1), the homogeneity of the film surface improves as the deposition rate increases. Not only does the pattern of the island structures become blurred, but the inner vacancy ratio and surface roughness also remain low as the deposition rate increases. From our results, there may exist a deposition rate to optimize the Alq3 film with a suitable surface morphology for luminant devices.

Effects of Incident Angle on Microstructure of Ni-Cr Film Deposited by PVD

2008 ◽  
Vol 373-374 ◽  
pp. 184-187
Author(s):  
Ying Chun Shan ◽  
Jiu Jun Xu ◽  
Xiao Dong He ◽  
Ming Wei Li
Keyword(s):  
Surface Roughness ◽  
Packing Density ◽  
Critical Incident ◽  
Physical Vapor Deposition ◽  
Kinetic Monte Carlo ◽  
Incident Angle ◽  
Roughness Factor ◽  
Initial Location ◽  
Shadowing Effect ◽  
Cr Film

A 2D kinetic Monte Carlo (KMC) simulation has been applied to study the microstructure of Ni-Cr film deposited by physical vapor deposition (PVD) for variable incident angle. In the KMC method, two phenomena were incorporated: adatom-surface collision and adatom diffusion, the interaction between atoms was described by embedded atom method and jumping energy was calculated by molecular statics calculations, initial location of adatom was located by Momentum Scheme. The results reveal that there exists critical incident angle, which is 35˚ for Ni-Cr thin film. When incident angle is less than 35˚, incident angle have less affect on surface roughness factor and packing density, compact films with smooth surface are obtained, their surface roughness factor is bellow 1.12 and packing density is more than 99.6%. However, when incident angle is more than 35˚, surface roughness factor increases quickly and packing density decreases sharply with incident angle increasing: surface roughness factor increase to 1.5 and 2.3 for incident angle of 45˚ and 60˚ respectively, packing density is below 99% and 96% accordingly. Which reveal that the self-shadowing effect emphasizes with incident angle increasing when the incident angle is more than 35˚.

Single Wafer Amorphous Silicon Process Evaluation

1997 ◽  
Vol 467 ◽  
Author(s):  
David O'Meara ◽  
Chow Ling Chang ◽  
Roc Blumenthal ◽  
Rama I. Hegde ◽  
Lata Prabhu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Cross Sections ◽  
Growth Conditions ◽  
Degree Of Crystallinity ◽  
Deposition Parameters ◽  
Before And After ◽  
Production Requirement

ABSTRACTSingle wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

Regulation of film thickness, surface roughness and porosity in thin film growth using deposition rate

2009 ◽  
Vol 64 (17) ◽  
pp. 3903-3913 ◽  
Author(s):  
Gangshi Hu ◽  
Gerassimos Orkoulas ◽  
Panagiotis D. Christofides
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Film Thickness ◽  
Deposition Rate ◽  
Film Growth ◽  
Thin Film Growth

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

2019 ◽  
Vol 87 (3) ◽  
pp. 31301 ◽  
Author(s):  
Hicham El Azrak ◽  
Abdessamad Hassani ◽  
Abdelhadi Makan ◽  
Fouad Eddiai ◽  
Khalid Sbiaai ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Md Simulation ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Rough Surface Morphology

In this paper, molecular dynamics (MD) simulation of surface morphology during homoepitaxial growth of Copper was investigated. For this purpose, simulations of Cu deposition on the Cu(111) substrate with an incidence energy of 0.06 eV at 300K were performed using the embedded-atom method (EAM). The grown thin film on Cu(111) reveled a rough surface morphology. During deposition, the important fraction of atoms intended for the upper layers undergone a rising rate of about 40% starting from the 2nd period and continued to increase until 65%, while the lower level reached a permanent rate of only 25% by the 4th period. Otherwise, except at the first layer level, the lower layers are incomplete. This void in the lower layers has favored the growth of the upper layers until a rate of 143% and has accelerated their time appearance. Th incidence energy has favored the filling of lower layers by reducing this surface roughness. However, the temperature effect needs more relaxation time to fill the lower layers.

The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

2017 ◽  
Vol 1143 ◽  
pp. 227-232
Author(s):  
Elena Emanuela Herbei ◽  
Michael P.M. Jank ◽  
Susanne Oertel ◽  
Laurentiu Frangu ◽  
Viorica Mușat
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Pmma Film ◽  
Pmma Layer ◽  
Deposition Parameters ◽  
Dielectric Performance

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

Phase Field Simulation on the Surface Morphology of Cu/Ti Nano Thin Film

2021 ◽  
Vol 1035 ◽  
pp. 712-717
Author(s):  
Ping Ping Wu ◽  
Bing Rui Xing
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Layer Thickness ◽  
Phase Field ◽  
Simulation Method ◽  
Film Structure ◽  
Phase Field Method ◽  
Practical Applications ◽  
Thin Film Structure

Cu/Ti binary thin film system has many applications for micro-/nano- electro mechanical systems (MEMS/NEMS), micro-electronics and optoelectronics. In nanoscale, the quality and many physical properties of nano thin films are strongly depended on its surface morphology. In the present paper the development of surface morphology of double layered Cu/Ti thin film heterostructure with different composition and thickness has been studied by using the phase field method. The developed method is based on solving Cahn-Hilliard equations of multi-order parameters with considering the interfacial energy and elastic energy. The simulation results show that the thickness of Ti layer and Cu layer in the double-layer thin film structure can affect the surface roughness. For the heterostructures with the Cu layer thickness was fixed at 20 nm, the surface roughness was found to vary from 0.608 nm to 0.712 nm, when the Ti layer thickness increased from 10 nm to 30 nm. The calculated surface morphology and roughness was similar to the experimentally measured values. It is believed that this simulation method is useful in designing multi-layered thin film structure for practical applications.

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