The Effect of Technological Condition on Electrical Properties of ITO Films

2007 ◽  
Vol 345-346 ◽  
pp. 1233-1236
Author(s):  
Sheng Nan Zeng ◽  
Jia Xiang Liu ◽  
Nan Zhang
Keyword(s):  
Electrical Properties ◽  
Sheet Resistance ◽  
Treatment Process ◽  
Sintering Temperature ◽  
Dip Coating ◽  
Stannic Chloride ◽  
Technological Condition ◽  
Quartz Glass Substrate ◽  
Dip Coating Technique ◽  
Ito Films

The transparent ITO multi-layers films were fabricated on quartz glass substrate by colloid dip-coating technique from indium metal ingots and stannic chloride. It was systematically studied that the effect of the electrical properties of the ITO on doped Sn in quantitative change, different dip-coating technological conditions such as thermal treatment process, coating number plies by four-probe instrument. From the 5 wt. % Sn to 20 wt. % Sn, with the amount of doped Sn increasing, the sheet resistance of ITO was up to minimum and then increased. Sintering temperature and holding time were the reasons for the electrical properties of the ITO films, when other parameters are unaltered. It is also concluded that coating number plies was play an important role on electrical properties of ITO films by sheet resistance. From the results of research, it can be seen that the multi-layer films has optimum characteristics, whose sheet resistance is 117'/□, when the use level of Sn is 10%wt,heated in 800°C 15min with repeated dip-coating seven times..

Optical and Electrical Properties of Transparent Conduction ITO Films Prepared by Dip-Coating Process

2006 ◽  
Vol 11-12 ◽  
pp. 171-174
Author(s):  
Sheng Jie Piao ◽  
Jia Xiang Liu ◽  
Nan Zhang
Keyword(s):  
Sheet Resistance ◽  
Soda Lime ◽  
Heat Treating ◽  
Dip Coating ◽  
Float Glass ◽  
X Ray Diffraction ◽  
Ito Film ◽  
Dip Coating Technique ◽  
Resistance Value ◽  
Ito Films

Transparent conductive ITO films were fabricated on soda lime float glass substrate by colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was systematically studied that the effect of the electrical, the structure and optical properties of the ITO doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase of the annealing temperature and holding time; the transmissivity of the ITO films was higher than 80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).

Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method

2013 ◽  
Vol 320 ◽  
pp. 185-189
Author(s):  
Juan Yang ◽  
Hong Bo Sun ◽  
Dan Li
Keyword(s):  
Sheet Resistance ◽  
Photoelectron Spectroscopy ◽  
Dip Coating ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Films ◽  
Coating Method ◽  
Dip Coating Method ◽  
Dip Coating Technique

The graphene (GE) films were fabricated in this paper through the deposition of graphene oxide (GO) sheets onto the quartz slide by means of dip-coating technique, followed by thermal annealing. The growth process and transmittance of the film were monitored by ultraviolet and visible spectrophotometer (UV-Vis), the surface morphology and structure were investigated by Atomic force microscopy (AFM), Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman. The sheet resistance of the film was also tested and results showed that the sheet resistance is about 60 kΩ-1and the transmittance is as high as 81 % (at 550 nm).

scholarly journals Figures of Merit for High-Performance Transparent Electrodes Using Dip-Coated Silver Nanowire Networks

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Sergio B. Sepulveda-Mora ◽  
Sylvain G. Cloutier
Keyword(s):  
Sheet Resistance ◽  
High Performance ◽  
Silver Nanowires ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Silver Nanowire ◽  
Figures Of Merit ◽  
The One ◽  
Nanowire Networks ◽  
Dip Coating Technique

Homogeneous, highly conductive, and transparent silver nanowire thin films were fabricated using a simple dip-coating technique and a subsequent annealing step. Silver nanowires with two different average lengths (11 μm and 19 μm) were used in the sample preparation to analyze the dependence of the sheet resistance on the length of the one-dimensional nanostructures. The best sample had a sheet resistance of 10.2 Ω/□with optical transmittance of 89.9%. Two figures of merit, the electrical to optical conductivity ratio(σDC/σOP)andϕTC, were obtained for all the samples in order to measure their performance as transparent conductive materials.

Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films

2013 ◽  
Vol 684 ◽  
pp. 279-284 ◽  
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Ru Yuan Yang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Range ◽  
Annealing Atmosphere ◽  
Optical And Electrical Properties ◽  
Ito Thin Films ◽  
Ito Films

In this paper, the Indium Tin Oxide (ITO) thin films were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.

scholarly journals Optical and Electrical Properties of Glass/Graphene Oxide Thin Films

2020 ◽  
Vol 18 (47) ◽  
pp. 73-83
Author(s):  
Adi Mahmood Abdul Hussein ◽  
Sallal Abdulhadi Abdullah ◽  
Mohammed RASHEED ◽  
Rafid Sabbar Zamel
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical And Electrical Properties ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Preparation Conditions ◽  
Graphene Films ◽  
Dip Coating Technique ◽  
Deposited Film

The study effect Graphene on optical and electrical properties of glass prepared on glass substrates using sol–gel dip-coating technique. The deposited film of about (60-100±5%) nm thick. Optical and electrical properties of the films were studied under different preparation conditions, such as graphene concentration of 2, 4, 6 and 8 wt%. The results show that the optical band gap for glass-graphene films decreasing after adding the graphene. Calculated optical constants, such as transmittance, extinction coefficient are changing after adding graphene. The structural morphology and composition of elements for the samples have been demonstrated using SEM and EDX. The electrical properties of films include DC electrical conductivity; we found an increasing in current as graphene concentration increases.

Investigation of Sol-Gel Technique to Prepare ITO Films Using Orthogonal Experiment

2011 ◽  
Vol 199-200 ◽  
pp. 1804-1808
Author(s):  
Jie Liu ◽  
Jing Liu ◽  
Xu Wu ◽  
Bin Yang
Keyword(s):  
Sheet Resistance ◽  
Annealing Temperature ◽  
Orthogonal Experiment ◽  
Sol Gel ◽  
Dip Coating ◽  
Experimental Conditions ◽  
As Doping ◽  
Withdrawal Speed ◽  
Quartz Glasses ◽  
Ito Films

Transparent and conductive ITO thin films were prepared on quartz glasses by the sol-gel dip-coating method. This process is affected by factors such as doping level of tin, number of dip-coatings (layers or thickness of film), withdrawal speed, annealing temperature and time. The effects of each factor at 5 levels on the properties of ITO films has been studied and optimized using the method of orthogonal experiments (L25(5)5). Quantitative analysis of the parameters in the orthogonal array design was performed and the results indicate that when the sheet resistance and transmittance are the two targets, the optimum experimental conditions are: mol ratio of Sn: In: 1/10, number of dip-coatings: 8, withdrawal speed: 200 mm/min, annealing temperature: 550°C and time: 70 minutes. To validate the project, another experiment was performed under the above conditions to determine the best performance of ITO film. The test results show that the sheet resistance is 125Ω/γ and transmittance is 86.2%, which meets the expected aim.

Application of Ethanolamine Method FOB the Preparation of Indium Oxide-Based Sols And Films

1992 ◽  
Vol 271 ◽  
Author(s):  
Yasutaia Taiahashi ◽  
Hideo Hayashi ◽  
Yutaka Ohya
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Dip Coating ◽  
Optical And Electrical Properties ◽  
Ito Film ◽  
Ito Films

ABSTRACTIt is found that ethanolamine method, recently developed by us, is very useful to form stable, concentrated (0.4–0.5M) indium oxide-based sols from which very uniform, transparent In2O3 and ITO films are obtained by dip-coating. Indium isopropoxide and acetate can be used as the starting materials. The optical and electrical properties of these films were examined. A transparent ITO film with the highest conductivity (3030 S/cm, after annealing at 0.05 torr-600°C for 60 min) was obtained from the acetate at 600°C. The films from the alkoxide had lower conductivities probably due to the impurities included in the alkoxide.

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