Effect of Annealing Temperature on the Microstructure of Barium Strontium Titanate Films

2008 ◽  
Vol 368-372 ◽  
pp. 56-58
Author(s):  
Jia Xuan Liao ◽  
En Qiu Li ◽  
Zhong Tian ◽  
Jiang Xu ◽  
Hai Guang Yang
Keyword(s):  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Annealing Temperature ◽  
Structural Characteristics ◽  
Rf Magnetron Sputtering ◽  
Surface And Interface ◽  
Barium Strontium ◽  
Bst Films

Barium strontium titanate (Ba1−xSrxTiO3, BST) films have been prepared on Pt/Ti/SiO2/Si by medium frequency (MF) magnetron sputtering, and subsequently in situ crystallized at 500-700°C. The microstructures of the MF-BST films are studied. BST films prepared by radio frequency (RF) magnetron sputtering and exhibited preferential (110) orientation, are compared. XRD shows that the MF-BST films exhibit preferential (111) orientation and better crystallization than the RF-BST films at the same annealing temperature. AFM displayed that the MF-BST films were smooth and compact. XPS analysis exhibited that the MF-BST films revealed better surface and interface structural characteristics. Their dielectric properties were also compared.

Stoichiometric Effects of Sputtered Barium Strontium Titanate Films

1997 ◽  
Vol 493 ◽  
Author(s):  
B. A. Baumert ◽  
T.-L. Tsai ◽  
L.-H. Chang ◽  
T. P. Remmel ◽  
M. L. Kottke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Sputtered Films ◽  
Barium Strontium ◽  
Powder Samples ◽  
Increasing Temperature

ABSTRACTBarium Strontium Titanate films have been deposited by rf magnetron sputtering and have been studied with respect to Ba/Sr ratio. Physical and electrical characterization has been done as a function of temperature, thickness, and composition, and results show that dielectric constant increases with increasing temperature, thickness (up to ∼80 nm), and Ba/Sr ratio for the compositions studied. The lattice parameters for the sputtered films are larger than those expected for powder samples and also increase with increasing Ba/Sr ratio.

Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering

1999 ◽  
Vol 75 (20) ◽  
pp. 3186-3188 ◽  
Author(s):  
P. Padmini ◽  
T. R. Taylor ◽  
M. J. Lefevre ◽  
A. S. Nagra ◽  
R. A. York ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Rf Magnetron Sputtering ◽  
High Tunability ◽  
Barium Strontium

Effects of thermal misfit strains on dielectric features of sandwich barium strontium titanate multilayer thin films on metal plates

2021 ◽  
pp. 2150030
Author(s):  
Hanting Dong ◽  
Liang Ke ◽  
Xiangjun Hui ◽  
Jiangfeng Mao ◽  
Haiqing Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Composition Range ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Barium Strontium ◽  
Metal Plates ◽  
Bst Films

Effects of thermal misfit strains on dielectric features for sandwich structural barium strontium titanate (BST) thin films on metal plates were investigated via a modified thermodynamic model. When TEC of substrates is closer to that of BST, larger permittivity and tunability can be received. The tendency of permittivities and tunabilities of such films as a function of TEC of substrates agrees with that of single compositional BST films and compositionally graded BST multilayer films. The highest tunability reaches 60% at the biasing field of 300 kV/cm when the films are onto Ti metal. Moreover, Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure can obtain higher tunability than Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure, while Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 films show better compatible composition range for relatively larger tunability. Dielectric properties of sandwich-like BST films in some references can also be analyzed based on our calculated results.

scholarly journals THE DETERMINATION OF BARIUM STRONTIUM TITANATE THIN FILM BAND GAP ENERGY Ba0,15Sr0,85TiO3 USING ULTRAVIOLET-VISIBLE SPECTROSCOPY

2020 ◽  
Vol 5 (1) ◽  
pp. 11-20
Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Zulkarnaen Zulkarnaen ◽  
Rahmi Afrida Syahraini ◽  
TS Luqman Husein
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Barium Strontium ◽  
Vis Spectroscopy ◽  
Bst Thin Film

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC.  Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.

Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

2003 ◽  
Vol 765 ◽  
Author(s):  
Hyun Goo Kwon ◽  
Youngwoo Oh ◽  
Jung Woo Park ◽  
Young Kuk Lee ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Smooth Surface ◽  
Annealing Temperature ◽  
Dielectric Constants ◽  
Working Pressure ◽  
Barium Strontium ◽  
Ethyl Amine

AbstractWe report the synthesis of new precursors Ba(thd)2(tmeea) and Sr(thd)2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)2(OiPr)2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420°C were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.

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