Stoichiometric Effects of Sputtered Barium Strontium Titanate Films

1997 ◽  
Vol 493 ◽  
Author(s):  
B. A. Baumert ◽  
T.-L. Tsai ◽  
L.-H. Chang ◽  
T. P. Remmel ◽  
M. L. Kottke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Sputtered Films ◽  
Barium Strontium ◽  
Powder Samples ◽  
Increasing Temperature

ABSTRACTBarium Strontium Titanate films have been deposited by rf magnetron sputtering and have been studied with respect to Ba/Sr ratio. Physical and electrical characterization has been done as a function of temperature, thickness, and composition, and results show that dielectric constant increases with increasing temperature, thickness (up to ∼80 nm), and Ba/Sr ratio for the compositions studied. The lattice parameters for the sputtered films are larger than those expected for powder samples and also increase with increasing Ba/Sr ratio.

Effect of Annealing Temperature on the Microstructure of Barium Strontium Titanate Films

2008 ◽  
Vol 368-372 ◽  
pp. 56-58
Author(s):  
Jia Xuan Liao ◽  
En Qiu Li ◽  
Zhong Tian ◽  
Jiang Xu ◽  
Hai Guang Yang
Keyword(s):  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Annealing Temperature ◽  
Structural Characteristics ◽  
Rf Magnetron Sputtering ◽  
Surface And Interface ◽  
Barium Strontium ◽  
Bst Films

Barium strontium titanate (Ba1−xSrxTiO3, BST) films have been prepared on Pt/Ti/SiO2/Si by medium frequency (MF) magnetron sputtering, and subsequently in situ crystallized at 500-700°C. The microstructures of the MF-BST films are studied. BST films prepared by radio frequency (RF) magnetron sputtering and exhibited preferential (110) orientation, are compared. XRD shows that the MF-BST films exhibit preferential (111) orientation and better crystallization than the RF-BST films at the same annealing temperature. AFM displayed that the MF-BST films were smooth and compact. XPS analysis exhibited that the MF-BST films revealed better surface and interface structural characteristics. Their dielectric properties were also compared.

Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering

1999 ◽  
Vol 75 (20) ◽  
pp. 3186-3188 ◽  
Author(s):  
P. Padmini ◽  
T. R. Taylor ◽  
M. J. Lefevre ◽  
A. S. Nagra ◽  
R. A. York ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Rf Magnetron Sputtering ◽  
High Tunability ◽  
Barium Strontium

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

Investigation of Dielectric Constant and Dispersion in Barium Strontium Titanate Capacitors

1997 ◽  
Vol 493 ◽  
Author(s):  
Sufi Zafar ◽  
Peir Chu ◽  
T. Remmel ◽  
Robert E. Jones ◽  
Bruce White ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Simple Model ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Platinum Electrode ◽  
Reverse Correlation ◽  
Barium Strontium ◽  
Quantitative Explanation

ABSTRACTThe correlation between the dielectric constant and dispersion is investigated for barium strontium titanate (BST) capacitors with platinum and iridium electrodes. For platinum electrode capacitors, dispersion decreases with increasing dielectric constant. In contrast, capacitors with iridium electrodes exhibit the reverse correlation. A simple model is proposed to provide a quantitative explanation for the observed correlation for both platinum and iridium electrodes. In addition, the dependence of the dielectric constant and dispersion on varying ratios of (Ba+Sr)/Ti is also reported.

Structures and electrical properties of barium strontium titanate thin films grown by multi-ion-beam reactive sputtering technique

1995 ◽  
Vol 10 (3) ◽  
pp. 708-726 ◽  
Author(s):  
C-J. Peng ◽  
S.B. Krupanidhi
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Electric Fields ◽  
Barium Strontium Titanate ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Type I ◽  
Type Ii ◽  
Barium Strontium

The structure and electrical properties of multi-ion beam reactive sputter (MIBERS) deposited barium strontium titanate (BST) films were characterized in terms of Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness, doping concentration, and secondary low-energy oxygen ion bombardment. Films deposited onto unheated substrates, followed by annealing at 700 °C showed lower dielectric constant (<200), compared to a dielectric constant of about 560 for those deposited at elevated temperatures, probably due to reduced voids. Two types of microstructures (type I and type II) were observed depending on the incipient phase of the as-grown films, which also led to two types of time domain dielectric response, Curie-von Schweidler and Debye type, respectively. The current-voltage (I-V) characteristics of type II films doped with high donor concentration showed a bulk space-charge-limited conduction (SCLC) with discrete shallow traps embedded in a trap-distributed background at high electric fields. The I-V characteristics of bombarded films deposited at higher substrate temperatures showed promising results of lower leakage currents and trap densities.

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