scholarly journals THE DETERMINATION OF BARIUM STRONTIUM TITANATE THIN FILM BAND GAP ENERGY Ba0,15Sr0,85TiO3 USING ULTRAVIOLET-VISIBLE SPECTROSCOPY

2020 ◽  
Vol 5 (1) ◽  
pp. 11-20
Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Zulkarnaen Zulkarnaen ◽  
Rahmi Afrida Syahraini ◽  
TS Luqman Husein

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC.  Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.


2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.


Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.


Author(s):  
Rahmi Dewi ◽  
Krisman Krisman ◽  
Tiara Pertiwi ◽  
Tengku Luqman

Lapisan tipis Barium Strontium Titanate (BST) telah ditelaah dengan komposisi  Ba0.75 Sr0.25 TiO3 menggunakan metode sol-gel yang digabungkan pada suhu 600 dan 650oC. Lapisan tipis BST dikarakterisasi menggunakan Field Emission Scanning Electron Microscopy (FESEM) dan spektroskopi impedansi. Hasil dari karakterisasi FESEM untuk sampel pada suhu 600 dan 650oC ialah 55.83 nm dan 84.88 nm dari segi ketebalan secara berurutan. Hasil dari karakterisasi spektroskopi impedansi berdasarkan nilai frekuensi menunjukkan nilai impedansi yang nyata dan imajiner. Nilai kapasitsa pada frekuensi 20 Hz dari lapisan tipis BST pada suhu 600 dan 650oC ialah 69.36 dan 138.70 F. Konstanta dielektrik dari lapisan tipis BST pada suhu 600 dan 650oC ialah 22.17 dan 131.56 secara berurutan.   The thin film of Barium Strontium Titanate (BST) has been studied with composition of Ba0.75 Sr0.25 TiO3 by using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of FESEM characterization for samples in temperature of 600 dan 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600 dan 650oC are 69.36 F and 138.7oF. The dielectric constant of the thin film of BST in temperature of 600 dan 650oC are 22.17 and 131.56 respectively.


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