Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

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Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

MRS Proceedings ◽

10.1557/proc-285-397 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 1

Author(s):

P. Tiwari ◽

T. Zheleva ◽

A. Morimoto ◽

V.N. Shukla ◽

J. Narayan

Keyword(s):

Thin Films ◽

Physical Vapor Deposition ◽

Ferroelectric Properties ◽

Processing Parameters ◽

Yttria Stabilized Zirconia ◽

Buffer Layers ◽

Stabilized Zirconia ◽

Vapor Deposition Technique ◽

Pzt Films ◽

Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

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Laser deposition of biaxially textured yttria‐stabilized zirconia buffer layers on polycrystalline metallic alloys for high critical current Y‐Ba‐Cu‐O thin films

Applied Physics Letters ◽

10.1063/1.108277 ◽

1992 ◽

Vol 61 (18) ◽

pp. 2231-2233 ◽

Cited By ~ 243

Author(s):

R. P. Reade ◽

P. Berdahl ◽

R. E. Russo ◽

S. M. Garrison

Keyword(s):

Thin Films ◽

Critical Current ◽

Metallic Alloys ◽

Yttria Stabilized Zirconia ◽

Buffer Layers ◽

Laser Deposition ◽

Stabilized Zirconia

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Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

MRS Proceedings ◽

10.1557/proc-243-519 ◽

1991 ◽

Vol 243 ◽

Author(s):

C. K. Chiang ◽

W. Wong-Ng ◽

L. P. Cook ◽

P. K. Schenck ◽

H. M. Lee ◽

...

Keyword(s):

Thin Films ◽

Amorphous Material ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Linear Shrinkage ◽

Laser Deposition ◽

Amorphous Films ◽

Pzt Thin Films ◽

Si Substrates ◽

Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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